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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

    Single FETs, MOSFETs

    Manufacturer Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package

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    FETs, MOSFETs

    TomatoElec supplies FETs and MOSFETs for industrial, automotive, power control, motor drive and general electronics applications. Our sourcing support covers field effect transistors, power MOSFETs and other commonly used switching and control semiconductor products.

    We support flexible RFQ service for FET and MOSFET sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

    With access to multiple supply channels, TomatoElec aims to provide customers with reliable FET and MOSFET sourcing support, responsive quotation and global delivery service.

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    IPZA60R016CM8XKSA1

    IPZA60R016CM8XKSA1

    IPZA60R016CM8XKSA1

    Infineon Technologies

    		 391 -
    RFQ

    -

    		 CoolMOS™ TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 123A (Tc) 10V 16mOhm @ 62.5A, 10V 4.7V @ 1.48mA 171 nC @ 10 V ±20V 7545 pF @ 400 V - 521W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4-U02
    NVBG023N065M3S

    NVBG023N065M3S

    SIC MOS D2PAK-7L 23MOHM 650V M3S

    onsemi

    		 1,600 -
    RFQ

    -

    		 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 70A (Tc) 15V, 18V 33mOhm @ 20A, 18V 4V @ 10mA 69 nC @ 18 V +22V, -8V 1951 pF @ 400 V - 263W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
    G3F33MT06K

    G3F33MT06K

    650V 27M TO-247-4 G3F SIC MOSFET

    GeneSiC Semiconductor

    		 600 -
    RFQ

    -

    		 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 74A (Tc) 15V, 18V 38mOhm @ 26A, 18V 4.3V @ 12mA 81 nC @ 18 V +22V, -10V 2394 pF @ 400 V - 227W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
    NVHL060N065SC1

    NVHL060N065SC1

    SIC MOS TO247-3L 650V

    onsemi

    		 450 -
    RFQ
    		NVHL060N065SC1

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 47A (Tc) 15V, 18V 70mOhm @ 20A, 18V 4.3V @ 6.5mA 74 nC @ 18 V +22V, -8V 1473 pF @ 325 V - 176W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
    GS66502B-MR

    GS66502B-MR

    GS66502B-MR

    Infineon Technologies Canada Inc.

    		 208 -
    RFQ

    -

    		 - 3-SMD, No Lead Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 7.5A (Tc) 6V 260mOhm @ 2.25A, 6V 2.6V @ 1.75mA 1.6 nC @ 6 V +7V, -10V 60 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount -
    TW048Z65C,S1F

    TW048Z65C,S1F

    G3 650V SIC-MOSFET TO-247-4L 48

    Toshiba Semiconductor and Storage

    		 243 -
    RFQ
    		TW048Z65C,S1F

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 40A (Tc) 18V 69mOhm @ 20A, 18V 5V @ 1.6mA 41 nC @ 18 V +25V, -10V 1362 pF @ 400 V - 132W (Tc) 175°C - - Through Hole TO-247-4L(X)
    AIMBG120R060M1XTMA1

    AIMBG120R060M1XTMA1

    SIC_DISCRETE

    Infineon Technologies

    		 959 -
    RFQ
    		AIMBG120R060M1XTMA1

    Datasheet

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 38A (Tc) 18V, 20V 75mOhm @ 13A, 20V 5.1V @ 4.3mA 32 nC @ 20 V +23V, -5V 880 pF @ 800 V - 202W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-12
    NVHL023N065M3S

    NVHL023N065M3S

    SIC MOS TO247-3L 23MOHM 650V M3S

    onsemi

    		 440 -
    RFQ

    -

    		 - TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 70A (Tc) 15V, 18V 33mOhm @ 20A, 18V 4V @ 10mA 69 nC @ 18 V +22V, -8V 1952 pF @ 400 V - 263W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
    SCTH35N65G2V-7AG

    SCTH35N65G2V-7AG

    SICFET N-CH 650V 45A H2PAK-7

    STMicroelectronics

    		 1,000 -
    RFQ
    		SCTH35N65G2V-7AG

    Datasheet

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 45A (Tc) 18V, 20V 67mOhm @ 20A, 20V 5V @ 1mA 73 nC @ 20 V +22V, -10V 1370 pF @ 400 V - 208W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-7
    IMTA65R020M2HXTMA1

    IMTA65R020M2HXTMA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 371 -
    RFQ
    		IMTA65R020M2HXTMA1

    Datasheet

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    SCT4026DWAHRTL

    SCT4026DWAHRTL

    750V, 51A, 7-PIN SMD, TRENCH-STR

    Rohm Semiconductor

    		 980 -
    RFQ
    		SCT4026DWAHRTL

    Datasheet

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 51A (Tc) 18V 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V +21V, -4V 2320 pF @ 500 V - - 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7LA
    C3M0040120K1

    C3M0040120K1

    MOSFET N-CH 1200V 57A TO247-4L

    Wolfspeed, Inc.

    		 283 -
    RFQ
    		C3M0040120K1

    Datasheet

         		- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 57A (Tc) 15V 53mOhm @ 31.9A, 15V 3.8V @ 8.377mA 94 nC @ 15 V +19V, -8V 2726 pF @ 1000 V - 242W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    FCH029N65S3-F155

    FCH029N65S3-F155

    MOSFET N-CH 650V 75A TO247-3

    onsemi

    		 399 -
    RFQ
    		FCH029N65S3-F155

    Datasheet

         		SuperFET® III TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) - 29mOhm @ 37.5A, 10V 4.5V @ 7mA 201 nC @ 10 V ±30V 6340 pF @ 400 V - 463W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    IMW65R020M2HXKSA1

    IMW65R020M2HXKSA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 163 -
    RFQ
    		IMW65R020M2HXKSA1

    Datasheet

         		CoolSiC™ Gen 2 TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 83A (Tc) 15V, 20V 18mOhm @ 46.9A, 20V 5.6V @ 9.5mA 57 nC @ 18 V +23V, -7V 2038 pF @ 400 V - 273W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-40
    IXFX120N30P3

    IXFX120N30P3

    MOSFET N-CH 300V 120A PLUS247-3

    Littelfuse Inc.

    		 240 -
    RFQ
    		IXFX120N30P3

    Datasheet

         		HiPerFET™, Polar3™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 300 V 120A (Tc) 10V 27mOhm @ 60A, 10V 5V @ 4mA 150 nC @ 10 V ±20V 8630 pF @ 25 V - 1130W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
    IMBG40R011M2HXTMA1

    IMBG40R011M2HXTMA1

    SIC-MOS

    Infineon Technologies

    		 1,000 -
    RFQ
    		IMBG40R011M2HXTMA1

    Datasheet

         		CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 13.4A (Ta), 133A (Tc) 15V, 18V 14.4mOhm @ 37.1A, 18V 5.6V @ 13.3mA 85 nC @ 18 V +23V, -7V 3770 pF @ 200 V - 3.8W (Ta), 429W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-11
    NTH4L018N075SC1

    NTH4L018N075SC1

    SIC MOS TO247-4L 750V

    onsemi

    		 400 -
    RFQ
    		NTH4L018N075SC1

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 140A (Tc) 15V, 18V 18mOhm @ 66A, 18V 4.3V @ 22mA 262 nC @ 18 V +22V, -8V 5010 pF @ 375 V - 500W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    NVH4L060N090SC1

    NVH4L060N090SC1

    -

    onsemi

    		 1,349 -
    RFQ
    		NVH4L060N090SC1

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 900 V 46A (Tc) 15V, 18V 84mOhm @ 20A, 15V 4.3V @ 5mA 87 nC @ 15 V +22V, -8V 1770 pF @ 450 V - 221W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    NVH4L045N065SC1

    NVH4L045N065SC1

    SIC MOS TO247-4L 650V

    onsemi

    		 422 -
    RFQ
    		NVH4L045N065SC1

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 55A (Tc) 15V, 18V 50mOhm @ 25A, 18V 4.3V @ 8mA 105 nC @ 18 V +22V, -8V 1870 pF @ 325 V - 187W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    SCTW60N120G2

    SCTW60N120G2

    DISCRETE

    STMicroelectronics

    		 600 -
    RFQ
    		SCTW60N120G2

    Datasheet

         		- TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 1200 V 60A (Tc) 18V 52mOhm @ 30A, 18V 5V @ 1mA 94 nC @ 8 V +18V, -5V 1969 pF @ 800 V - 389W (Tc) -55°C ~ 200°C (TJ) - - Through Hole HiP247™
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