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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

    Single FETs, MOSFETs

    Manufacturer Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package

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    FETs, MOSFETs

    TomatoElec supplies FETs and MOSFETs for industrial, automotive, power control, motor drive and general electronics applications. Our sourcing support covers field effect transistors, power MOSFETs and other commonly used switching and control semiconductor products.

    We support flexible RFQ service for FET and MOSFET sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

    With access to multiple supply channels, TomatoElec aims to provide customers with reliable FET and MOSFET sourcing support, responsive quotation and global delivery service.

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    NVHL060N090SC1

    NVHL060N090SC1

    SICFET N-CH 900V 46A TO247-3

    onsemi

    		 383 -
    RFQ
    		NVHL060N090SC1

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 900 V 46A (Tc) 15V 84mOhm @ 20A, 15V 4.3V @ 5mA 87 nC @ 15 V +19V, -10V 1770 pF @ 450 V - 221W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
    SCT3060ARHRC15

    SCT3060ARHRC15

    650V, 39A, 4-PIN THD, TRENCH-STR

    Rohm Semiconductor

    		 446 -
    RFQ
    		SCT3060ARHRC15

    Datasheet

         		- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 39A (Tc) 18V 78mOhm @ 13A, 18V 5.6V @ 6.67mA 58 nC @ 18 V +22V, -4V 852 pF @ 500 V - 165W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    NSF080120L4A0Q

    NSF080120L4A0Q

    NSF080120L4A0/SOT8071/TO247-4L

    Nexperia USA Inc.

    		 446 -
    RFQ
    		NSF080120L4A0Q

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 35A (Tc) 15V, 18V 120mOhm @ 20A, 15V 2.9V @ 2mA 52 nC @ 15 V +22V, -10V 1335 pF @ 800 V - 183W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
    AIMZA75R040M1HXKSA1

    AIMZA75R040M1HXKSA1

    IGBT

    Infineon Technologies

    		 229 -
    RFQ
    		AIMZA75R040M1HXKSA1

    Datasheet

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 44A (Tj) 15V, 20V 37mOhm @ 16.6A, 20V 5.6V @ 6mA 34 nC @ 18 V +23V, -5V 1135 pF @ 500 V - 185W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4
    IMZA65R033M2HXKSA1

    IMZA65R033M2HXKSA1

    IMZA65R033M2HXKSA1

    Infineon Technologies

    		 390 -
    RFQ
    		IMZA65R033M2HXKSA1

    Datasheet

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 53A (Tc) 15V, 20V 30mOhm @ 27.9A, 20V 5.6V @ 5.7mA 34 nC @ 18 V +23V, -7V 1214 pF @ 400 V - 194W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-8
    IMBG40R015M2HXTMA1

    IMBG40R015M2HXTMA1

    SIC-MOS

    Infineon Technologies

    		 939 -
    RFQ
    		IMBG40R015M2HXTMA1

    Datasheet

         		CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 11.7A (Ta), 111A (Tc) 15V, 18V 19.1mOhm @ 27.1A, 18V 5.6V @ 9.7mA 62 nC @ 18 V +23V, -7V 2730 pF @ 200 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-11
    SCT3060ARC15

    SCT3060ARC15

    650V, 39A, 4-PIN THD, TRENCH-STR

    Rohm Semiconductor

    		 427 -
    RFQ
    		SCT3060ARC15

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 39A (Tj) 18V 78mOhm @ 13A, 18V 5.6V @ 6.67mA 58 nC @ 18 V +22V, -4V 852 pF @ 500 V - 165W 175°C (TJ) - - Through Hole TO-247-4L
    SCT3080KRC15

    SCT3080KRC15

    1200V, 31A, 4-PIN THD, TRENCH-ST

    Rohm Semiconductor

    		 365 -
    RFQ
    		SCT3080KRC15

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tj) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 785 pF @ 800 V - 165W 175°C (TJ) - - Through Hole TO-247-4L
    NVHL040N65S3HF

    NVHL040N65S3HF

    SUPERFER3 FRFET AUTOMOTIVE 40MOH

    onsemi

    		 430 -
    RFQ
    		NVHL040N65S3HF

    Datasheet

         		SuperFET® III, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 65A (Tc) 10V 40mOhm @ 32.5A, 10V 5V @ 2.1mA 157 nC @ 10 V ±30V 6655 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    NTH4L030N120M3S

    NTH4L030N120M3S

    SILICON CARBIDE (SIC) MOSFET EL

    onsemi

    		 422 -
    RFQ
    		NTH4L030N120M3S

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 73A (Tc) 18V 39mOhm @ 30A, 18V 4.4V @ 15mA 107 nC @ 18 V +22V, -10V 2430 pF @ 800 V - 313W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    NVH040N65S3F

    NVH040N65S3F

    SF3 FRFET AUTO 40MOHM TO-247

    onsemi

    		 412 -
    RFQ
    		NVH040N65S3F

    Datasheet

         		SuperFET® III TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 65A (Tc) 10V 40mOhm @ 32.5A, 10V 5V @ 2.1mA 153 nC @ 10 V ±30V 5875 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    SICW025N065H-BP

    SICW025N065H-BP

    SIC MOSFET,TO-247AB

    Micro Commercial Co

    		 360 -
    RFQ

    -

    		 - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 107A (Tc) 18V 30mOhm @ 50A, 18V 4.5V @ 50mA 275 nC @ 18 V +22V, -10V 5740 pF @ 400 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AB
    STH12N120K5-2AG

    STH12N120K5-2AG

    AUTOMOTIVE-GRADE N-CHANNEL 1200

    STMicroelectronics

    		 998 -
    RFQ
    		STH12N120K5-2AG

    Datasheet

         		MDmesh™ K5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 690mOhm @ 6A, 10V 5V @ 100µA 44.2 nC @ 10 V ±30V 1370 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount H2PAK-2
    S2M0040120D-1

    S2M0040120D-1

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 299 -
    RFQ
    		S2M0040120D-1

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tj) 20V 52mOhm @ 40A, 20V 4V @ 10mA 92.1 nC @ 20 V +20V, -5V 1904 pF @ 1000 V - 348W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
    NSF080120L3A0Q

    NSF080120L3A0Q

    SIC MOSFET / 80MOHM / 1200V / TO

    Nexperia USA Inc.

    		 420 -
    RFQ
    		NSF080120L3A0Q

    Datasheet

         		- - Tube Active - - - - - - - - - - - - - - - - -
    G3F45MT06D

    G3F45MT06D

    650V 40M TO-247-3 G3F SIC MOSFET

    GeneSiC Semiconductor

    		 600 -
    RFQ

    -

    		 - TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V - - - - - - - - - - - - Through Hole TO-247-3
    GS-065-030-6-LL-MR

    GS-065-030-6-LL-MR

    GAN POWER TRANSISTOR

    Infineon Technologies

    		 195 -
    RFQ
    		GS-065-030-6-LL-MR

    Datasheet

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 700 V 40A (Tc) 6V 58mOhm @ 5.5A, 6V 2.6V @ 7.5mA 6.7 nC @ 6 V +7V, -10V 235 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount TOLL
    C3M0045075K1

    C3M0045075K1

    SICFET N-CH 750V 42A TO247

    Wolfspeed, Inc.

    		 167 -
    RFQ
    		C3M0045075K1

    Datasheet

         		- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 750 V 42A (Tc) 15V 60mOhm @ 17.6A, 15V 3.8V @ 4.84mA 65 nC @ 15 V -8V, +19V 1606 pF @ 500 V - 139W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    IPWS65R022CFD7AXKSA1

    IPWS65R022CFD7AXKSA1

    AUTOMOTIVE_COOLMOS PG-TO247-3

    Infineon Technologies

    		 238 -
    RFQ
    		IPWS65R022CFD7AXKSA1

    Datasheet

         		CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 96A (Tc) 10V 22mOhm @ 58.2A, 10V 4.5V @ 2.91mA 234 nC @ 10 V ±30V 11659 pF @ 400 V - 446W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-31
    S3M0040120D

    S3M0040120D

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 300 -
    RFQ
    		S3M0040120D

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 65A (Tc) 18V 52mOhm @ 40A, 18V 4V @ 16mA 143 nC @ 18 V +20V, -8V 2844 pF @ 1000 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
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