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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

    Single FETs, MOSFETs

    Manufacturer Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package

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    FETs, MOSFETs

    TomatoElec supplies FETs and MOSFETs for industrial, automotive, power control, motor drive and general electronics applications. Our sourcing support covers field effect transistors, power MOSFETs and other commonly used switching and control semiconductor products.

    We support flexible RFQ service for FET and MOSFET sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

    With access to multiple supply channels, TomatoElec aims to provide customers with reliable FET and MOSFET sourcing support, responsive quotation and global delivery service.

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    AIMCQ120R060M1TXTMA1

    AIMCQ120R060M1TXTMA1

    SIC_DISCRETE

    Infineon Technologies

    		 850 -
    RFQ

    -

    		 CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 44A (Tc) 18V, 20V 75mOhm @ 13A, 20V 5.1V @ 4.3mA 32 nC @ 20 V +25V, -10V 880 pF @ 800 V - 259W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
    G3F60MT06D

    G3F60MT06D

    650V 55M TO-247-3 G3F SIC MOSFET

    GeneSiC Semiconductor

    		 600 -
    RFQ

    -

    		 - - Tube Active - - - - - - - - - - - - - - - - -
    SCT4062KWATL

    SCT4062KWATL

    1200V, 24A, 7-PIN SMD, TRENCH-ST

    Rohm Semiconductor

    		 999 -
    RFQ
    		SCT4062KWATL

    Datasheet

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 24A (Tc) 18V 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V +21V, -4V 1498 pF @ 800 V - - 175°C (TJ) - - Surface Mount TO-263-7LA
    SCT4045DWAHRTL

    SCT4045DWAHRTL

    750V, 31A, 7-PIN SMD, TRENCH-STR

    Rohm Semiconductor

    		 990 -
    RFQ
    		SCT4045DWAHRTL

    Datasheet

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 31A (Tc) 18V 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V +21V, -4V 1460 pF @ 500 V - - 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7LA
    SCT4062KWAHRTL

    SCT4062KWAHRTL

    1200V, 24A, 7-PIN SMD, TRENCH-ST

    Rohm Semiconductor

    		 956 -
    RFQ

    -

    		 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 24A (Tc) 18V 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V +21V, -4V 1498 pF @ 800 V - 93W 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7LA
    MSC080SMA120SCT/R

    MSC080SMA120SCT/R

    MOSFET SIC 1200 V 80 MOHM PSMT

    Microchip Technology

    		 1,300 -
    RFQ

    -

    		 - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    MSC080SMA120SDT/R

    MSC080SMA120SDT/R

    MOSFET SIC 1200 V 80 MOHM TO-263

    Microchip Technology

    		 800 -
    RFQ
    		MSC080SMA120SDT/R

    Datasheet

         		mSiC™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Bulk Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 35A (Tc) 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 182W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-268
    G3F60MT06K

    G3F60MT06K

    650V 55M TO-247-4 G3F SIC MOSFET

    GeneSiC Semiconductor

    		 600 -
    RFQ

    -

    		 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 42A (Tc) 15V, 18V 75mOhm @ 15A, 18V 4.3V @ 7mA 45 nC @ 18 V +22V, -10V 1322 pF @ 400 V - 140W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
    AIMZH120R160M1TXKSA1

    AIMZH120R160M1TXKSA1

    SIC_DISCRETE

    Infineon Technologies

    		 207 -
    RFQ
    		AIMZH120R160M1TXKSA1

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 18V, 20V 200mOhm @ 5A, 20V 5.1V @ 1.5mA 14 nC @ 20 V +23V, -5V 350 pF @ 800 V - 109W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-11
    IMZC120R040M2HXKSA1

    IMZC120R040M2HXKSA1

    IMZC120R040M2HXKSA1

    Infineon Technologies

    		 240 -
    RFQ
    		IMZC120R040M2HXKSA1

    Datasheet

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 48A (Tc) 15V, 18V 40mOhm @ 18A, 18V 5.1V @ 5.5mA 39 nC @ 18 V +23V, -7V 1310 pF @ 800 V - 218W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
    G3F45MT06J-TR

    G3F45MT06J-TR

    650V 40M TO-263-7 G3F SIC MOSFET

    GeneSiC Semiconductor

    		 800 -
    RFQ

    -

    		 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 56A (Tc) 15V, 18V 54mOhm @ 20A, 18V 4.3V @ 8mA 55 nC @ 18 V +22V, -10V 1640 pF @ 400 V - 187W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    G3F65MT12J-TR

    G3F65MT12J-TR

    1200V 65M TO-263-7 G3F SIC MOSFE

    GeneSiC Semiconductor

    		 800 -
    RFQ

    -

    		 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 37A (Tc) 18V 86mOhm @ 15A, 18V 4.3V @ 10mA 55 nC @ 18 V +22V, -10V 1298 pF @ 800 V - 171W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    R6061YNZ4C13

    R6061YNZ4C13

    NCH 600V 61A, TO-247, POWER MOSF

    Rohm Semiconductor

    		 588 -
    RFQ
    		R6061YNZ4C13

    Datasheet

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 61A (Tc) 10V, 12V 60mOhm @ 13A, 12V 6V @ 3.5mA 76 nC @ 10 V ±30V 3700 pF @ 100 V - 568W (Tc) 150°C (TJ) - - Through Hole TO-247
    IPT60T022S7XTMA1

    IPT60T022S7XTMA1

    HIGH POWER_NEW

    Infineon Technologies

    		 218 -
    RFQ
    		IPT60T022S7XTMA1

    Datasheet

         		CoolMOS™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tj) 12V 22mOhm @ 23A, 12V 4.5V @ 1.43mA 150 nC @ 12 V ±20V 5640 pF @ 300 V - 390W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-2
    G3F65MT12K

    G3F65MT12K

    1200V 65M TO-247-4 G3F SIC MOSFE

    GeneSiC Semiconductor

    		 600 -
    RFQ

    -

    		 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 35A (Tc) 18V 86mOhm @ 15A, 18V 4.3V @ 10mA 55 nC @ 18 V +22V, -10V 1298 pF @ 800 V - 153W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
    C3M0060075K1

    C3M0060075K1

    SICFET N-CH 750V 35A TO247

    Wolfspeed, Inc.

    		 389 -
    RFQ
    		C3M0060075K1

    Datasheet

         		- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 750 V 35A (Tc) 15V 78mOhm @ 13.4A, 15V 3.8V @ 3.67mA 52 nC @ 15 V -8V, +19V 1203 pF @ 500 V - 126W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    C3M0160120J-TR

    C3M0160120J-TR

    SIC, MOSFET, 160M, 1200V, TO-263

    Wolfspeed, Inc.

    		 300 -
    RFQ
    		C3M0160120J-TR

    Datasheet

         		C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 15V 208mOhm @ 8.5A, 15V 3.6V @ 2.33mA 24 nC @ 15 V +15V, -4V 632 pF @ 1000 V - 90W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263-7
    C3M0160120K1

    C3M0160120K1

    MOSFET N-CH 1200V 17.9A TO247-4L

    Wolfspeed, Inc.

    		 229 -
    RFQ
    		C3M0160120K1

    Datasheet

         		- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 17.9A (Tc) 15V 208mOhm @ 8.5A, 15V 3.8V @ 2.33mA 32 nC @ 15 V +19V, -8V 730 pF @ 1000 V - 103W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    IPQC60T022S7XTMA1

    IPQC60T022S7XTMA1

    HIGH POWER_NEW

    Infineon Technologies

    		 750 -
    RFQ
    		IPQC60T022S7XTMA1

    Datasheet

         		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 90A (Tc) 12V 22mOhm @ 23A, 12V 4.5V @ 1.43mA 150 nC @ 12 V ±20V 5640 pF @ 300 V - 416W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
    NVHL075N065SC1

    NVHL075N065SC1

    SILICON CARBIDE (SIC) MOSFET, NC

    onsemi

    		 446 -
    RFQ
    		NVHL075N065SC1

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 38A (Tc) 15V, 18V 85mOhm @ 15A, 18V 4.3V @ 5mA 61 nC @ 18 V +22V, -8V 1196 pF @ 325 V - 148W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
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