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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

    Single FETs, MOSFETs

    Manufacturer Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package

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    FETs, MOSFETs

    TomatoElec supplies FETs and MOSFETs for industrial, automotive, power control, motor drive and general electronics applications. Our sourcing support covers field effect transistors, power MOSFETs and other commonly used switching and control semiconductor products.

    We support flexible RFQ service for FET and MOSFET sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

    With access to multiple supply channels, TomatoElec aims to provide customers with reliable FET and MOSFET sourcing support, responsive quotation and global delivery service.

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    S2M0040120K-1

    S2M0040120K-1

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 300 -
    RFQ
    		S2M0040120K-1

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tj) 20V 52mOhm @ 40A, 20V 4V @ 10mA 92.1 nC @ 20 V +20V, -5V 1904 pF @ 1000 V - 348W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    IPDQ60R025CFD7XTMA1

    IPDQ60R025CFD7XTMA1

    HIGH POWER_NEW

    Infineon Technologies

    		 725 -
    RFQ
    		IPDQ60R025CFD7XTMA1

    Datasheet

         		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 90A (Tc) 10V 25mOhm @ 32.6A, 10V 4.5V @ 1.63mA 141 nC @ 10 V ±20V 5626 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
    G3F33MT06J-TR

    G3F33MT06J-TR

    650V 27M TO-263-7 G3F SIC MOSFET

    GeneSiC Semiconductor

    		 800 -
    RFQ

    -

    		 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 80A (Tc) 15V, 18V 38mOhm @ 26A, 18V 4.3V @ 12mA 81 nC @ 18 V +22V, -10V 2394 pF @ 400 V - 261W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    G3F45MT06K

    G3F45MT06K

    650V 40M TO-247-4 G3F SIC MOSFET

    GeneSiC Semiconductor

    		 600 -
    RFQ

    -

    		 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 52A (Tc) 15V, 18V 54mOhm @ 20A, 18V 4.3V @ 8mA 55 nC @ 18 V +22V, -10V 1640 pF @ 400 V - 167W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
    AIMZHN120R080M1TXKSA1

    AIMZHN120R080M1TXKSA1

    SIC_DISCRETE

    Infineon Technologies

    		 233 -
    RFQ
    		AIMZHN120R080M1TXKSA1

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V, 20V 100mOhm @ 10A, 20V 5.1V @ 3.3mA 24 nC @ 20 V +23V, -5V 671 pF @ 800 V - 169W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-14
    SCT055HU65G3AG

    SCT055HU65G3AG

    AUTOMOTIVE-GRADE SILICON CARBIDE

    STMicroelectronics

    		 523 -
    RFQ
    		SCT055HU65G3AG

    Datasheet

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 30A (Tc) 15V, 18V 72mOhm @ 15A, 18V 4.2V @ 1mA 29 nC @ 18 V +22V, -10V 721 pF @ 400 V - 185W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount HU3PAK
    STY60NK30Z

    STY60NK30Z

    MOSFET N-CH 300V 60A MAX247

    STMicroelectronics

    		 490 -
    RFQ
    		STY60NK30Z

    Datasheet

         		SuperMESH™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 300 V 60A (Tc) 10V 45mOhm @ 30A, 10V 4.5V @ 100µA 220 nC @ 10 V ±30V 7200 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) - - Through Hole MAX247™
    NSF060120D7A0J

    NSF060120D7A0J

    NSF060120D7A0/SOT8070/TO263-7L

    Nexperia USA Inc.

    		 800 -
    RFQ

    -

    		 - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    NSF060120L3A0Q

    NSF060120L3A0Q

    NSF060120L3A0/SOT429-2/TO247-3

    Nexperia USA Inc.

    		 450 -
    RFQ
    		NSF060120L3A0Q

    Datasheet

         		- - Tube Active - - - - - - - - - - - - - - - - -
    AOM065V120X2Q

    AOM065V120X2Q

    1200V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 238 -
    RFQ
    		AOM065V120X2Q

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 40.3A (Tc) 15V 85mOhm @ 10A, 15V 3.5V @ 10mA 62.3 nC @ 15 V +15V, -5V 1716 pF @ 800 V - 187.5W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    S3M0040120K

    S3M0040120K

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 300 -
    RFQ
    		S3M0040120K

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 65A (Tc) 18V 52mOhm @ 40A, 18V 4V @ 16mA 143 nC @ 18 V +22V, -8V 2844 pF @ 1000 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    C3M0075120K1

    C3M0075120K1

    MOSFET N-CH 1200V 32A TO247-4L

    Wolfspeed, Inc.

    		 345 -
    RFQ
    		C3M0075120K1

    Datasheet

         		- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 32A (Tc) 15V 97.5mOhm @ 17.9A, 15V 3.8V @ 5mA 55 nC @ 15 V +19V, -8V 1480 pF @ 1000 V - 145W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    SICW080N120Y4-BP

    SICW080N120Y4-BP

    N-CHANNEL MOSFET,TO-247-4

    Micro Commercial Co

    		 338 -
    RFQ
    		SICW080N120Y4-BP

    Datasheet

         		- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 39A 18V 85mOhm @ 20A, 18V 3.6V @ 5mA 41 nC @ 18 V +22V, -8V 890 pF @ 1000 V - 223W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    NVH4L032N065M3S

    NVH4L032N065M3S

    SIC MOS TO247-4L 32MOHM 650V M3S

    onsemi

    		 422 -
    RFQ

    -

    		 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 50A (Tc) 15V, 18V 44mOhm @ 15A, 18V 4V @ 7.5mA 55 nC @ 18 V +22V, -8V 1410 pF @ 400 V - 187W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
    IMDQ75R027M1HXUMA1

    IMDQ75R027M1HXUMA1

    IMDQ75R027M1HXUMA1

    Infineon Technologies

    		 708 -
    RFQ
    		IMDQ75R027M1HXUMA1

    Datasheet

         		CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 64A (Tj) 15V, 20V 25mOhm @ 24.5A, 20V 5.6V @ 8.8mA 49 nC @ 18 V +20V, -2V 1668 pF @ 500 V - 273W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HDSOP-22-1
    NVH4L070N120M3S

    NVH4L070N120M3S

    SILICON CARBIDE (SIC) MOSFET-ELI

    onsemi

    		 222 -
    RFQ
    		NVH4L070N120M3S

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 34A (Tc) 18V 87mOhm @ 15A, 18V 4.4V @ 7mA 57 nC @ 18 V +22V, -10V 1230 pF @ 800 V - 160W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    PJMK040N60EC_T0_00201

    PJMK040N60EC_T0_00201

    600V/ 40M / 71A/ EASY TO DRIVER

    Panjit International Inc.

    		 690 -
    RFQ
    		PJMK040N60EC_T0_00201

    Datasheet

         		- - Tube Active - - - - - - - - - - - - - - - - -
    AOK065V65X2

    AOK065V65X2

    MOSFET N-CH 650V 40.3A TO247

    Alpha & Omega Semiconductor Inc.

    		 225 -
    RFQ
    		AOK065V65X2

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 40.3A (Tc) 15V 85mOhm @ 10A, 15V 3.5V @ 10mA 58.8 nC @ 15 V +15V, -5V 1762 pF @ 400 V - 187.5W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-247
    DIW170SIC070

    DIW170SIC070

    SIC MOSFET, TO-247-3L, N, 70A, 1

    Diotec Semiconductor

    		 150 -
    RFQ
    		DIW170SIC070

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1700 V 70A (Tc) 20V 22.3mOhm @ 40A, 20V 4V @ 10mA 80 nC @ 18 V +20V, -5V 6000 pF @ 1200 V - 416W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
    IPQC60R017S7XTMA1

    IPQC60R017S7XTMA1

    MOSFET

    Infineon Technologies

    		 750 -
    RFQ
    		IPQC60R017S7XTMA1

    Datasheet

         		CoolMOS™ S7 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 12V 17mOhm @ 29A, 12V 4.5V @ 1.89mA 196 nC @ 12 V ±20V 7370 pF @ 300 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
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