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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

    Single FETs, MOSFETs

    Manufacturer Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package

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    FETs, MOSFETs

    TomatoElec supplies FETs and MOSFETs for industrial, automotive, power control, motor drive and general electronics applications. Our sourcing support covers field effect transistors, power MOSFETs and other commonly used switching and control semiconductor products.

    We support flexible RFQ service for FET and MOSFET sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

    With access to multiple supply channels, TomatoElec aims to provide customers with reliable FET and MOSFET sourcing support, responsive quotation and global delivery service.

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    IMW65R026M2HXKSA1

    IMW65R026M2HXKSA1

    IMW65R026M2HXKSA1

    Infineon Technologies

    		 390 -
    RFQ
    		IMW65R026M2HXKSA1

    Datasheet

         		CoolSiC™ TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 64A (Tc) 15V, 20V 24mOhm @ 34.5A, 20V 5.6V @ 7mA 42 nC @ 18 V +23V, -7V 1499 pF @ 400 V - 227W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-40
    S3M0040120J

    S3M0040120J

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 300 -
    RFQ
    		S3M0040120J

    Datasheet

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 76A (Tc) 18V 52mOhm @ 40A, 18V 4V @ 16mA 143 nC @ 18 V +20V, -8V 2844 pF @ 1000 V - 600W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    TSG65N110CE RVG

    TSG65N110CE RVG

    650V, 18A, PDFN88, E-MODE GAN TR

    Taiwan Semiconductor Corporation

    		 3,000 -
    RFQ
    		TSG65N110CE RVG

    Datasheet

         		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    AIMDQ75R027M1HXUMA1

    AIMDQ75R027M1HXUMA1

    AIMDQ75R027M1HXUMA1

    Infineon Technologies

    		 671 -
    RFQ

    -

    		 CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 64A (Tj) 15V, 20V 25mOhm @ 24.5A, 20V 5.6V @ 8.8mA 49 nC @ 18 V +23V, -5V 1668 pF @ 500 V - 273W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
    G3F40MT12K

    G3F40MT12K

    1200V 40M TO-247-4 G3F SIC MOSFE

    GeneSiC Semiconductor

    		 552 -
    RFQ

    -

    		 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 55A (Tc) 18V 53mOhm @ 20A, 18V 4.3V @ 16mA 86 nC @ 18 V +22V, -10V 2023 pF @ 800 V - 234W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
    AOK033V120X2

    AOK033V120X2

    1200V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 208 -
    RFQ
    		AOK033V120X2

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 15V 43mOhm @ 20A, 15V 2.8V @ 17.5mA 104 nC @ 15 V +15V, -5V 2908 pF @ 800 V - 300W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-247
    NSF060120L4A0Q

    NSF060120L4A0Q

    NSF060120L4A0/SOT8071/TO247-4L

    Nexperia USA Inc.

    		 450 -
    RFQ
    		NSF060120L4A0Q

    Datasheet

         		- - Tube Active - - - - - - - - - - - - - - - - -
    IPDQ60R017S7AXTMA1

    IPDQ60R017S7AXTMA1

    MOSFET

    Infineon Technologies

    		 750 -
    RFQ
    		IPDQ60R017S7AXTMA1

    Datasheet

         		CoolMOS™ S7 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 12V 17mOhm @ 29A, 12V 4.5V @ 1.89mA 196 nC @ 12 V ±20V 7370 pF @ 300 V - 500W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
    IMZC120R026M2HXKSA1

    IMZC120R026M2HXKSA1

    IMZC120R026M2HXKSA1

    Infineon Technologies

    		 215 -
    RFQ
    		IMZC120R026M2HXKSA1

    Datasheet

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 69A (Tc) 15V, 18V 25mOhm @ 27A, 18V 5.1V @ 8.6mA 60 nC @ 18 V +23V, -7V 1990 pF @ 800 V - 289W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
    IMZA75R027M1HXKSA1

    IMZA75R027M1HXKSA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 239 -
    RFQ
    		IMZA75R027M1HXKSA1

    Datasheet

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 60A (Tj) 15V, 20V 25mOhm @ 24.5A, 20V 5.6V @ 8.8mA 49 nC @ 18 V +23V, -5V 1668 pF @ 500 V - 234W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4
    AOK065V120X2

    AOK065V120X2

    SILICON CARBIDE MOSFET, ENHANCEM

    Alpha & Omega Semiconductor Inc.

    		 118 -
    RFQ
    		AOK065V120X2

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 40.3A (Tc) 15V 85mOhm @ 20A, 15V 3.5V @ 250µA 62.3 nC @ 15 V +18V, -8V 1716 pF @ 800 V - 187.5W (Tj) -55°C ~ 175°C (TJ) - - Through Hole TO-247
    SCT060HU75G3AG

    SCT060HU75G3AG

    AUTOMOTIVE-GRADE SILICON CARBIDE

    STMicroelectronics

    		 582 -
    RFQ
    		SCT060HU75G3AG

    Datasheet

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 30A (Tc) 15V, 18V 78mOhm @ 15A, 18V 4.2V @ 1mA 29 nC @ 18 V 4.2V @ 1mA 680 pF @ 400 V - 185W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount HU3PAK
    IPZA60R016CM8XKSA1

    IPZA60R016CM8XKSA1

    IPZA60R016CM8XKSA1

    Infineon Technologies

    		 391 -
    RFQ

    -

    		 CoolMOS™ TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 123A (Tc) 10V 16mOhm @ 62.5A, 10V 4.7V @ 1.48mA 171 nC @ 10 V ±20V 7545 pF @ 400 V - 521W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4-U02
    NVBG023N065M3S

    NVBG023N065M3S

    SIC MOS D2PAK-7L 23MOHM 650V M3S

    onsemi

    		 1,600 -
    RFQ

    -

    		 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 70A (Tc) 15V, 18V 33mOhm @ 20A, 18V 4V @ 10mA 69 nC @ 18 V +22V, -8V 1951 pF @ 400 V - 263W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
    G3F33MT06K

    G3F33MT06K

    650V 27M TO-247-4 G3F SIC MOSFET

    GeneSiC Semiconductor

    		 600 -
    RFQ

    -

    		 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 74A (Tc) 15V, 18V 38mOhm @ 26A, 18V 4.3V @ 12mA 81 nC @ 18 V +22V, -10V 2394 pF @ 400 V - 227W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
    NVHL060N065SC1

    NVHL060N065SC1

    SIC MOS TO247-3L 650V

    onsemi

    		 450 -
    RFQ
    		NVHL060N065SC1

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 47A (Tc) 15V, 18V 70mOhm @ 20A, 18V 4.3V @ 6.5mA 74 nC @ 18 V +22V, -8V 1473 pF @ 325 V - 176W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
    GS66502B-MR

    GS66502B-MR

    GS66502B-MR

    Infineon Technologies Canada Inc.

    		 208 -
    RFQ

    -

    		 - 3-SMD, No Lead Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 7.5A (Tc) 6V 260mOhm @ 2.25A, 6V 2.6V @ 1.75mA 1.6 nC @ 6 V +7V, -10V 60 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount -
    TW048Z65C,S1F

    TW048Z65C,S1F

    G3 650V SIC-MOSFET TO-247-4L 48

    Toshiba Semiconductor and Storage

    		 243 -
    RFQ
    		TW048Z65C,S1F

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 40A (Tc) 18V 69mOhm @ 20A, 18V 5V @ 1.6mA 41 nC @ 18 V +25V, -10V 1362 pF @ 400 V - 132W (Tc) 175°C - - Through Hole TO-247-4L(X)
    AIMBG120R060M1XTMA1

    AIMBG120R060M1XTMA1

    SIC_DISCRETE

    Infineon Technologies

    		 959 -
    RFQ
    		AIMBG120R060M1XTMA1

    Datasheet

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 38A (Tc) 18V, 20V 75mOhm @ 13A, 20V 5.1V @ 4.3mA 32 nC @ 20 V +23V, -5V 880 pF @ 800 V - 202W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-12
    NVHL023N065M3S

    NVHL023N065M3S

    SIC MOS TO247-3L 23MOHM 650V M3S

    onsemi

    		 440 -
    RFQ

    -

    		 - TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 70A (Tc) 15V, 18V 33mOhm @ 20A, 18V 4V @ 10mA 69 nC @ 18 V +22V, -8V 1952 pF @ 400 V - 263W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
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