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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

    Single FETs, MOSFETs

    Manufacturer Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package

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    FETs, MOSFETs

    TomatoElec supplies FETs and MOSFETs for industrial, automotive, power control, motor drive and general electronics applications. Our sourcing support covers field effect transistors, power MOSFETs and other commonly used switching and control semiconductor products.

    We support flexible RFQ service for FET and MOSFET sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

    With access to multiple supply channels, TomatoElec aims to provide customers with reliable FET and MOSFET sourcing support, responsive quotation and global delivery service.

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    AOK033V120X2Q

    AOK033V120X2Q

    1200V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 209 -
    RFQ
    		AOK033V120X2Q

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 15V 43mOhm @ 20A, 15V 2.8V @ 17.5mA 104 nC @ 15 V +15V, -5V 2908 pF @ 800 V - 300W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
    AOM015V65X2

    AOM015V65X2

    650V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 238 -
    RFQ
    		AOM015V65X2

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 96A (Tc) 15V 22mOhm @ 24A, 15V 3.5V @ 24mA 152 nC @ 15 V +15V, -5V 4880 pF @ 400 V - 312W (Tj) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    AOK015V65X2

    AOK015V65X2

    650V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 238 -
    RFQ
    		AOK015V65X2

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 96A (Tc) 15V 22mOhm @ 24A, 15V 3.5V @ 24mA 152 nC @ 15 V +15V, -5V 4880 pF @ 400 V - 312W (Tj) -55°C ~ 175°C (TJ) - - Through Hole TO-247
    C3M0025075K1

    C3M0025075K1

    SICFET N-CH 750V 80A TO247

    Wolfspeed, Inc.

    		 184 -
    RFQ
    		C3M0025075K1

    Datasheet

         		- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 750 V 80A (Ta) 15V 34mOhm @ 33.5A, 15V 3.8V @ 9.22mA 119 nC @ 15 V -8V, +19V 3055 pF @ 500 V - 262W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    NVHL025N065SC1

    NVHL025N065SC1

    SIC MOS TO247-3L 650V

    onsemi

    		 450 -
    RFQ
    		NVHL025N065SC1

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 99A (Tc) 15V, 18V 28.5mOhm @ 45A, 18V 4.3V @ 15.5mA 164 nC @ 18 V +22V, -8V 3480 pF @ 325 V - 348W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
    NSF040120L4A0Q

    NSF040120L4A0Q

    NSF040120L4A0/SOT8071/TO247-4L

    Nexperia USA Inc.

    		 432 -
    RFQ
    		NSF040120L4A0Q

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 65A (Tj) 15V, 18V 60mOhm @ 40A, 15V 2.9V @ 4mA 95 nC @ 15 V +22V, -10V 2600 pF @ 800 V - 306W (Tj) -55°C ~ 175°C (TJ) - - Through Hole TO-247
    NVH4L025N065SC1

    NVH4L025N065SC1

    SIC MOS TO247-4L 650V

    onsemi

    		 882 -
    RFQ
    		NVH4L025N065SC1

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 99A (Tc) 15V, 18V 28.5mOhm @ 45A, 18V 4.3V @ 15.5mA 164 nC @ 18 V +22V, -8V 3480 pF @ 325 V - 348W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    IPQC60R010S7XTMA1

    IPQC60R010S7XTMA1

    MOSFET

    Infineon Technologies

    		 750 -
    RFQ
    		IPQC60R010S7XTMA1

    Datasheet

         		CoolMOS™ S7 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 12V 10mOhm @ 50A, 12V 4.5V @ 3.08mA 318 nC @ 12 V ±20V - - 694W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
    NTHL019N60S5F

    NTHL019N60S5F

    SUPERFET5 FRFET, 19MOHM, TO-247-

    onsemi

    		 442 -
    RFQ
    		NTHL019N60S5F

    Datasheet

         		SuperFET® V, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 75A (Tc) 10V 19mOhm @ 37.5A,10V 4.8V @ 15.7mA 252 nC @ 10 V ±30V 13400 pF @ 400 V - 568W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    E3M0040120J2-TR

    E3M0040120J2-TR

    40m, 1200V SiC FET, TO-263-7 XL

    Wolfspeed, Inc.

    		 736 -
    RFQ
    		E3M0040120J2-TR

    Datasheet

         		E TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 63A (Tc) 15V 53mOhm @ 31.9A, 15V 3.8V @ 8.77mA 91 nC @ 15 V +19V, -8V 2726 pF @ 1000 V - 294W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    AOM020V120X2

    AOM020V120X2

    1200V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 230 -
    RFQ
    		AOM020V120X2

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 89A (Tc) 15V 28mOhm @ 27A, 15V 2.8V @ 27mA 166 nC @ 15 V +18V, -8V 5180 pF @ 800 V - 348W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    S2M0016120D-1

    S2M0016120D-1

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 300 -
    RFQ
    		S2M0016120D-1

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 140A (Tc) 18V, 20V 23mOhm @ 75A, 20V 3.6V @ 23mA 285 nC @ 20 V +20V, -5V 4540 pF @ 1000 V - 517W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
    NVH4L030N120M3S

    NVH4L030N120M3S

    SILICON CARBIDE (SIC) MOSFET-ELI

    onsemi

    		 393 -
    RFQ
    		NVH4L030N120M3S

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 73A (Tc) 18V 39mOhm @ 30A, 18V 4.4V @ 15mA 107 nC @ 18 V +22V, -10V 2430 pF @ 800 V - 313W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    S2M0016120K-1

    S2M0016120K-1

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 147 -
    RFQ
    		S2M0016120K-1

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 140A (Tc) 18V, 20V 23mOhm @ 75A, 20V 3.6V @ 23mA 285 nC @ 20 V +20V, -5V 4540 pF @ 1000 V - 517W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    TSG65N068CE RVG

    TSG65N068CE RVG

    650V, 30A, PDFN88, E-MODE GAN TR

    Taiwan Semiconductor Corporation

    		 2,962 -
    RFQ
    		TSG65N068CE RVG

    Datasheet

         		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    C3M0065100J-TR

    C3M0065100J-TR

    SICFET N-CH 1000V 35A TO263-7

    Wolfspeed, Inc.

    		 788 -
    RFQ
    		C3M0065100J-TR

    Datasheet

         		C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Last Time Buy N-Channel SiCFET (Silicon Carbide) 1000 V 35A (Tc) 15V 78mOhm @ 20A, 15V 3.5V @ 5mA 35 nC @ 15 V +15V, -4V 660 pF @ 600 V - 113.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263-7
    G3F20MT12J-TR

    G3F20MT12J-TR

    1200V 20M TO-263-7 G3F SIC MOSFE

    GeneSiC Semiconductor

    		 800 -
    RFQ

    -

    		 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 108A (Tc) 18V 26.5mOhm @ 40A, 18V 4.3V @ 30mA 176 nC @ 18 V +22V, -10V 4317 pF @ 800 V - 448W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    IMZA75R016M1HXKSA1

    IMZA75R016M1HXKSA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 210 -
    RFQ
    		IMZA75R016M1HXKSA1

    Datasheet

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 89A (Tj) 15V, 20V 15mOhm @ 41.5A, 20V 5.6V @ 14.9mA 81 nC @ 18 V +23V, -5V 2869 pF @ 500 V - 319W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4
    AIMZA75R016M1HXKSA1

    AIMZA75R016M1HXKSA1

    SICFET N-CH 750V 89A PG-TO247-4

    Infineon Technologies

    		 213 -
    RFQ
    		AIMZA75R016M1HXKSA1

    Datasheet

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 89A (Tc) 15V, 20V 22mOhm @ 41.5A, 18V 5.6V @ 14.9mA 81 nC @ 18 V +23V, -5V 2869 pF @ 500 V - 319W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4
    DIF120SIC053-AQ

    DIF120SIC053-AQ

    MOSFET TO-247-4L N 65A 1200V

    Diotec Semiconductor

    		 433 -
    RFQ
    		DIF120SIC053-AQ

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 65A (Tc) 18V 53mOhm @ 33A, 18V 4V @ 9.5mA 121 nC @ 15 V - 2070 pF @ 1000 V - 278W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
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