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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

    Single FETs, MOSFETs

    Manufacturer Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package

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    FETs, MOSFETs

    TomatoElec supplies FETs and MOSFETs for industrial, automotive, power control, motor drive and general electronics applications. Our sourcing support covers field effect transistors, power MOSFETs and other commonly used switching and control semiconductor products.

    We support flexible RFQ service for FET and MOSFET sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

    With access to multiple supply channels, TomatoElec aims to provide customers with reliable FET and MOSFET sourcing support, responsive quotation and global delivery service.

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    SCTH100N65G2-7AG

    SCTH100N65G2-7AG

    SICFET N-CH 650V 95A H2PAK-7

    STMicroelectronics

    		 876 -
    RFQ
    		SCTH100N65G2-7AG

    Datasheet

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 95A (Tc) 18V 26mOhm @ 50A, 18V 5V @ 5mA 162 nC @ 18 V +22V, -10V 3315 pF @ 520 V - 360W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-7
    C3M0025065J1-TR

    C3M0025065J1-TR

    SIC, MOSFET 25 M, 650V TO-263-7X

    Wolfspeed, Inc.

    		 780 -
    RFQ
    		C3M0025065J1-TR

    Datasheet

         		C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 80A (Tc) 15V 34mOhm @ 33.5A, 15V 3.6V @ 9.22mA 109 nC @ 15 V +19V, -8V 2980 pF @ 400 V - 271W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount TO-263-7
    NVHL015N065SC1

    NVHL015N065SC1

    SIC MOS TO247-3L 650V

    onsemi

    		 447 -
    RFQ
    		NVHL015N065SC1

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 163A (Tc) 15V, 18V 18mOhm @ 75A, 12V 4.3V @ 25mA 283 nC @ 18 V +22V, -8V 4790 pF @ 325 V - 643W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
    E3M0021120J2-TR

    E3M0021120J2-TR

    21m, 1200V SiC FET, TO-263-7 XL

    Wolfspeed, Inc.

    		 488 -
    RFQ
    		E3M0021120J2-TR

    Datasheet

         		E TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 114A (Tc) 15V 29mOhm @ 62.12A, 15V 3.8V @ 17.1mA 169 nC @ 15 V +19V, -8V 5100 pF @ 1000 V - 500W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    AIMZA75R008M1HXKSA1

    AIMZA75R008M1HXKSA1

    AUTOMOTIVE_SICMOS

    Infineon Technologies

    		 240 -
    RFQ
    		AIMZA75R008M1HXKSA1

    Datasheet

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 163A (Tc) 15V, 20V 7.2mOhm @ 90.3A, 20V 5.6V @ 32.4mA 178 nC @ 18 V +23V, -5V 6137 pF @ 500 V - 517W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-U02
    IMZA75R008M1HXKSA1

    IMZA75R008M1HXKSA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 240 -
    RFQ
    		IMZA75R008M1HXKSA1

    Datasheet

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 163A (Tc) 15V, 20V 7.2mOhm @ 90.3A, 20V 5.6V @ 32.4mA 178 nC @ 500 V +23V, -5V 6137 pF @ 500 V - 517W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-U02
    NCV81342CBATXG

    NCV81342CBATXG

    MOSFET

    onsemi

    		 1,000 -
    RFQ

    -

    		 - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    IPD030N03LF2SATMA1

    IPD030N03LF2SATMA1

    MOSFET N-CH 30V 160A DPAK

    Infineon Technologies

    		 2,000 -
    RFQ
    		IPD030N03LF2SATMA1

    Datasheet

         		StrongIRFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta), 99A (Tc) 4.5V, 10V 3.05mOhm @ 60A, 10V 2.35V @ 40µA 50 nC @ 10 V ±20V 2200 pF @ 15 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-34
    APT60M75L2FLLG

    APT60M75L2FLLG

    MOSFET N-CH 600V 73A 264 MAX

    Microchip Technology

    		 82 -
    RFQ
    		APT60M75L2FLLG

    Datasheet

         		POWER MOS 7® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 73A (Tc) 10V 75mOhm @ 36.5A, 10V 5V @ 5mA 195 nC @ 10 V ±30V 8930 pF @ 25 V - 893W (Tc) -55°C ~ 150°C (TJ) - - Through Hole 264 MAX™ [L2]
    C3M0016120K1

    C3M0016120K1

    MOSFET N-CH 1200V 125A TO247-4L

    Wolfspeed, Inc.

    		 325 -
    RFQ
    		C3M0016120K1

    Datasheet

         		- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 125A (Tc) 15V 22mOhm @ 80.28A, 15V 3.8V @ 22.08mA 223 nC @ 15 V +19V, -8V 6922 pF @ 1000 V - 483W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    APL502B2G

    APL502B2G

    MOSFET N-CH 500V 58A T-MAX

    Microchip Technology

    		 106 -
    RFQ
    		APL502B2G

    Datasheet

         		- TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 15V 90mOhm @ 29A, 12V 4V @ 2.5mA - ±30V 9000 pF @ 25 V - 730W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
    DIW120SIC022-AQ

    DIW120SIC022-AQ

    SIC MOSFET, TO-247-3L, N, 120A,

    Diotec Semiconductor

    		 150 -
    RFQ
    		DIW120SIC022-AQ

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 120A (Tc) 18V 22.3mOhm @ 75A, 18V 4V @ 23.5mA 269 nC @ 18 V +18V, -4V 4817 pF @ 1000 V - 340W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
    DIF120SIC022-AQ

    DIF120SIC022-AQ

    SIC MOSFET, TO-247-4L, N, 120A,

    Diotec Semiconductor

    		 150 -
    RFQ
    		DIF120SIC022-AQ

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 120A (Tc) 18V 22.3mOhm @ 75A, 18V 4V @ 23.5mA 269 nC @ 18 V +18V, -4V 4817 pF @ 1000 V - 340W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
    TW015Z120C,S1F

    TW015Z120C,S1F

    G3 1200V SIC-MOSFET TO-247-4L 1

    Toshiba Semiconductor and Storage

    		 68 -
    RFQ
    		TW015Z120C,S1F

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 18V 21mOhm @ 50A, 18V 5V @ 11.7mA 158 nC @ 18 V +25V, -10V 6000 pF @ 800 V - 431W (Tc) 175°C - - Through Hole TO-247-4L(X)
    IXFN55N120SK

    IXFN55N120SK

    SIC AND MULTICHIP DISCRETE

    IXYS

    		 182 -
    RFQ
    		IXFN55N120SK

    Datasheet

         		- SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 54A (Tc) 15V 42mOhm @ 40A, 15V 3.6V @ 12mA 107 nC @ 15 V +15V, -4V 3360 pF @ 1000 V - - -40°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
    DIW120SIC023-AQ

    DIW120SIC023-AQ

    MOSFET TO-247-3L N 130A 1200V

    Diotec Semiconductor

    		 705 -
    RFQ
    		DIW120SIC023-AQ

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 125A (Tc) 18V 23mOhm @ 75A, 18V 2.9V @ 250µA 45 nC @ 18 V - 6150 pF @ 1000 V - 600W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
    DF17MR12W1M1HFB68BPSA1

    DF17MR12W1M1HFB68BPSA1

    LOW POWER EASY

    Infineon Technologies

    		 33 -
    RFQ
    		DF17MR12W1M1HFB68BPSA1

    Datasheet

         		EasyPACK™ Module Tray Active N-Channel SiCFET (Silicon Carbide) 1200 V 45A (Tj) 15V, 18V 16.2mOhm @ 50A, 18V 5.15V @ 20mA 149 nC @ 18 V +20V, -7V 4400 pF @ 800 V - - -40°C ~ 175°C (TJ) - - Chassis Mount -
    CDA04N30X1C

    CDA04N30X1C

    GANFET 40V 30A .004 OHM 4DAPT

    EPC Space, LLC

    		 88 -
    RFQ

    -

    		 - - Tray Active - - - - - - - - - - - - - - - - -
    CDA10N30X1C

    CDA10N30X1C

    GANFET 100V 30A .009 OHM 4DAPT

    EPC Space, LLC

    		 100 -
    RFQ

    -

    		 - - Tray Active - - - - - - - - - - - - - - - - -
    CDA10N05X2C

    CDA10N05X2C

    GANFET 100V 5A .030 OHM 4DAPT

    EPC Space, LLC

    		 100 -
    RFQ

    -

    		 - - Tray Active - - - - - - - - - - - - - - - - -
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