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0755-82798135Single Diodes
Single Diodes
TomatoElec supplies single diodes for industrial, automotive, communication, power and general electronics applications. Our sourcing support covers commonly used single diode products for rectification, switching, signal control and protection circuit designs.
We support flexible RFQ service for single diode sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.
With access to multiple supply channels, TomatoElec aims to provide customers with reliable single diode sourcing support, responsive quotation and global delivery service.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DSDI60-18ADIODE GEN PURP 1.8KV 63A TO247AD |
2,767 | - |
|
Datasheet |
- | TO-247-2 | Tube | Active | Standard | 1800 V | 63A | 4.1 V @ 70 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 2 mA @ 1800 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
IDWD30G120C5XKSA1DIODE SIL CARB 1.2KV 87A TO247-2 |
652 | - |
|
Datasheet |
CoolSiC™+ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 87A | 1.65 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 248 µA @ 1200 V | 1980pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-2 | -55°C ~ 175°C |
|
UJ3D1725K2DIODE SIL CARB 1.7KV 25A TO247-2 |
4,349 | - |
|
Datasheet |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 25A | 1.7 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 360 µA @ 1700 V | 1500pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
IDWD40G120C5XKSA1DIODE SIL CARB 1.2KV 110A TO247 |
132 | - |
|
Datasheet |
CoolSiC™+ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 110A | 1.65 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 332 µA @ 1200 V | 2592pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-2 | -55°C ~ 175°C |
|
FFSH5065B-F085DIODE SIL CARB 650V 50A TO247-2 |
331 | - |
|
Datasheet |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 50A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 2030pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
NDSH25170ADIODE SIL CARB 1.7KV 25A TO247-2 |
849 | - |
|
Datasheet |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 25A | 1.75 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1700 V | 2025pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GD25MPS17HDIODE SIL CARB 1.7KV 56A TO247-2 |
1,285 | - |
|
Datasheet |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 56A | 1.8 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 1083pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
C6D10170H10A 1700V SIC, SCHOTTKY DIODE |
395 | - |
|
Datasheet |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 40A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 18 µA @ 1700 V | 1227pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
JANTXV1N5819UR-1DIODE SCHOTTKY 45V 1A DO213AB |
124 | - |
|
Datasheet |
- | DO-213AB, MELF (Glass) | Bag | Active | Schottky | 45 V | 1A | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | Military | MIL-PRF-19500/586 | Surface Mount | DO-213AB (MELF, LL41) | -65°C ~ 125°C |
|
UJ3D1250K2DIODE SIL CARB 1.2KV 50A TO247-2 |
14,813 | - |
|
Datasheet |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 50A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1200 V | 2340pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GC05MPS33JDIODE SIL CARB 3.3KV 5A TO263-7 |
1,114 | - |
|
Datasheet |
SiC Schottky MPS™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | SiC (Silicon Carbide) Schottky | 3300 V | 5A | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Surface Mount | TO-263-7 | 175°C |
|
C4D40120HDIODE SIL CARB 1.2KV 128A TO247 |
764 | - |
|
Datasheet |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 128A | 1.8 V @ 40 A | No Recovery Time > 500mA (Io) | - | 300 µA @ 1200 V | 2809pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
DMA150E1600NADIODE GP 1.6KV 150A SOT227B |
187 | - |
|
Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | Standard | 1600 V | 150A | 1.15 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 200 µA @ 1600 V | 60pF @ 400V, 1MHz | - | - | Chassis Mount | SOT-227B | -40°C ~ 150°C |
|
1N6391DIODE SCHOTTKY 45V 25A DO203AA |
74 | - |
|
Datasheet |
- | DO-203AA, DO-4, Stud | Bulk | Active | Schottky | 45 V | 25A | 500 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 45 V | 2000pF @ 5V, 1MHz | - | - | Stud Mount | DO-203AA (DO-4) | -55°C ~ 175°C |
|
JANTX1N5822USDIODE SCHOTTKY 40V 3A B SQ-MELF |
169 | - |
|
Datasheet |
- | SQ-MELF, B | Bulk | Active | Schottky | 40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Military | MIL-PRF-19500/620 | Surface Mount | B, SQ-MELF | -65°C ~ 150°C |
|
S300YDIODE GEN PURP 1.6KV 300A DO9 |
54 | - |
|
Datasheet |
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 1600 V | 300A | 1.2 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | - | - | - | Chassis, Stud Mount | DO-9 | -60°C ~ 180°C |
|
UGE1112AY4DIODE GEN PURP 8KV 4.2A UGE |
36 | - |
|
Datasheet |
- | UGE | Box | Active | Standard | 8000 V | 4.2A | 6.25 V @ 7 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 mA @ 8000 V | - | - | - | Chassis Mount | UGE | - |
|
1N5822USDIODE SCHOTTKY 40V 3A B SQ-MELF |
207 | - |
|
Datasheet |
- | SQ-MELF, B | Bulk | Active | Schottky | 40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 125°C |
|
MEO550-02DADIODE GEN PURP 200V 582A Y4-M6 |
143 | - |
|
Datasheet |
- | Y4-M6 | Bulk | Active | Standard | 200 V | 582A | 1.25 V @ 520 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 mA @ 200 V | - | - | - | Chassis Mount | Y4-M6 | -40°C ~ 150°C |
|
MEO450-12DADIODE GEN PURP 1.2KV 453A Y4-M6 |
114 | - |
|
Datasheet |
- | Y4-M6 | Box | Active | Standard | 1200 V | 453A | 1.96 V @ 520 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 24 mA @ 1200 V | - | - | - | Chassis Mount | Y4-M6 | -40°C ~ 150°C |
