Single Diodes

Manufacturer Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Single Diodes

TomatoElec supplies single diodes for industrial, automotive, communication, power and general electronics applications. Our sourcing support covers commonly used single diode products for rectification, switching, signal control and protection circuit designs.

We support flexible RFQ service for single diode sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

With access to multiple supply channels, TomatoElec aims to provide customers with reliable single diode sourcing support, responsive quotation and global delivery service.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
DSDI60-18A

DSDI60-18A

DIODE GEN PURP 1.8KV 63A TO247AD

IXYS

2,767 -
RFQ
DSDI60-18A

Datasheet

- TO-247-2 Tube Active Standard 1800 V 63A 4.1 V @ 70 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 2 mA @ 1800 V - - - Through Hole TO-247AD -40°C ~ 150°C
IDWD30G120C5XKSA1

IDWD30G120C5XKSA1

DIODE SIL CARB 1.2KV 87A TO247-2

Infineon Technologies

652 -
RFQ
IDWD30G120C5XKSA1

Datasheet

CoolSiC™+ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 87A 1.65 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 248 µA @ 1200 V 1980pF @ 1V, 1MHz - - Through Hole PG-TO247-2 -55°C ~ 175°C
UJ3D1725K2

UJ3D1725K2

DIODE SIL CARB 1.7KV 25A TO247-2

Qorvo

4,349 -
RFQ
UJ3D1725K2

Datasheet

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 25A 1.7 V @ 25 A No Recovery Time > 500mA (Io) 0 ns 360 µA @ 1700 V 1500pF @ 1V, 1MHz Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
IDWD40G120C5XKSA1

IDWD40G120C5XKSA1

DIODE SIL CARB 1.2KV 110A TO247

Infineon Technologies

132 -
RFQ
IDWD40G120C5XKSA1

Datasheet

CoolSiC™+ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 110A 1.65 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 332 µA @ 1200 V 2592pF @ 1V, 1MHz - - Through Hole PG-TO247-2 -55°C ~ 175°C
FFSH5065B-F085

FFSH5065B-F085

DIODE SIL CARB 650V 50A TO247-2

onsemi

331 -
RFQ
FFSH5065B-F085

Datasheet

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 50A 1.7 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 2030pF @ 1V, 100kHz Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
NDSH25170A

NDSH25170A

DIODE SIL CARB 1.7KV 25A TO247-2

onsemi

849 -
RFQ
NDSH25170A

Datasheet

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 25A 1.75 V @ 25 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1700 V 2025pF @ 1V, 100kHz - - Through Hole TO-247-2 -55°C ~ 175°C
GD25MPS17H

GD25MPS17H

DIODE SIL CARB 1.7KV 56A TO247-2

GeneSiC Semiconductor

1,285 -
RFQ
GD25MPS17H

Datasheet

SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 56A 1.8 V @ 25 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 1083pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
C6D10170H

C6D10170H

10A 1700V SIC, SCHOTTKY DIODE

Wolfspeed, Inc.

395 -
RFQ
C6D10170H

Datasheet

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 40A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 18 µA @ 1700 V 1227pF @ 0V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
JANTXV1N5819UR-1

JANTXV1N5819UR-1

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology

124 -
RFQ
JANTXV1N5819UR-1

Datasheet

- DO-213AB, MELF (Glass) Bag Active Schottky 45 V 1A 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz Military MIL-PRF-19500/586 Surface Mount DO-213AB (MELF, LL41) -65°C ~ 125°C
UJ3D1250K2

UJ3D1250K2

DIODE SIL CARB 1.2KV 50A TO247-2

Qorvo

14,813 -
RFQ
UJ3D1250K2

Datasheet

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 50A 1.7 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 1200 V 2340pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GC05MPS33J

GC05MPS33J

DIODE SIL CARB 3.3KV 5A TO263-7

GeneSiC Semiconductor

1,114 -
RFQ
GC05MPS33J

Datasheet

SiC Schottky MPS™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active SiC (Silicon Carbide) Schottky 3300 V 5A - No Recovery Time > 500mA (Io) 0 ns - - - - Surface Mount TO-263-7 175°C
C4D40120H

C4D40120H

DIODE SIL CARB 1.2KV 128A TO247

Wolfspeed, Inc.

764 -
RFQ
C4D40120H

Datasheet

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 128A 1.8 V @ 40 A No Recovery Time > 500mA (Io) - 300 µA @ 1200 V 2809pF @ 0V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
DMA150E1600NA

DMA150E1600NA

DIODE GP 1.6KV 150A SOT227B

IXYS

187 -
RFQ
DMA150E1600NA

Datasheet

- SOT-227-4, miniBLOC Tube Active Standard 1600 V 150A 1.15 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 200 µA @ 1600 V 60pF @ 400V, 1MHz - - Chassis Mount SOT-227B -40°C ~ 150°C
1N6391

1N6391

DIODE SCHOTTKY 45V 25A DO203AA

Microchip Technology

74 -
RFQ
1N6391

Datasheet

- DO-203AA, DO-4, Stud Bulk Active Schottky 45 V 25A 500 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 1.5 mA @ 45 V 2000pF @ 5V, 1MHz - - Stud Mount DO-203AA (DO-4) -55°C ~ 175°C
JANTX1N5822US

JANTX1N5822US

DIODE SCHOTTKY 40V 3A B SQ-MELF

Microchip Technology

169 -
RFQ
JANTX1N5822US

Datasheet

- SQ-MELF, B Bulk Active Schottky 40 V 3A 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - - - Military MIL-PRF-19500/620 Surface Mount B, SQ-MELF -65°C ~ 150°C
S300Y

S300Y

DIODE GEN PURP 1.6KV 300A DO9

GeneSiC Semiconductor

54 -
RFQ
S300Y

Datasheet

- DO-205AB, DO-9, Stud Bulk Active Standard 1600 V 300A 1.2 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1600 V - - - Chassis, Stud Mount DO-9 -60°C ~ 180°C
UGE1112AY4

UGE1112AY4

DIODE GEN PURP 8KV 4.2A UGE

IXYS

36 -
RFQ
UGE1112AY4

Datasheet

- UGE Box Active Standard 8000 V 4.2A 6.25 V @ 7 A Standard Recovery >500ns, > 200mA (Io) - 1 mA @ 8000 V - - - Chassis Mount UGE -
1N5822US

1N5822US

DIODE SCHOTTKY 40V 3A B SQ-MELF

Microchip Technology

207 -
RFQ
1N5822US

Datasheet

- SQ-MELF, B Bulk Active Schottky 40 V 3A 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 40 V - - - Surface Mount B, SQ-MELF -65°C ~ 125°C
MEO550-02DA

MEO550-02DA

DIODE GEN PURP 200V 582A Y4-M6

IXYS

143 -
RFQ
MEO550-02DA

Datasheet

- Y4-M6 Bulk Active Standard 200 V 582A 1.25 V @ 520 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 mA @ 200 V - - - Chassis Mount Y4-M6 -40°C ~ 150°C
MEO450-12DA

MEO450-12DA

DIODE GEN PURP 1.2KV 453A Y4-M6

IXYS

114 -
RFQ
MEO450-12DA

Datasheet

- Y4-M6 Box Active Standard 1200 V 453A 1.96 V @ 520 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 24 mA @ 1200 V - - - Chassis Mount Y4-M6 -40°C ~ 150°C
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