Single Diodes

Manufacturer Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Single Diodes

TomatoElec supplies single diodes for industrial, automotive, communication, power and general electronics applications. Our sourcing support covers commonly used single diode products for rectification, switching, signal control and protection circuit designs.

We support flexible RFQ service for single diode sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

With access to multiple supply channels, TomatoElec aims to provide customers with reliable single diode sourcing support, responsive quotation and global delivery service.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N5417

1N5417

DIODE GEN PURP 200V 3A B AXIAL

Microchip Technology

1,183 -
RFQ
1N5417

Datasheet

- Axial Bulk Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - - - Through Hole B, Axial -65°C ~ 175°C
DSEI20-12A

DSEI20-12A

DIODE GEN PURP 1.2KV 17A TO220AC

IXYS

846 -
RFQ
DSEI20-12A

Datasheet

- TO-220-2 Tube Active Standard 1200 V 17A 2.15 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 750 µA @ 1200 V - - - Through Hole TO-220AC -40°C ~ 150°C
IDH10G65C6XKSA1

IDH10G65C6XKSA1

DIODE SIL CARB 650V 24A TO220-2

Infineon Technologies

869 -
RFQ
IDH10G65C6XKSA1

Datasheet

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 24A 1.35 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 33 µA @ 420 V 495pF @ 1V, 1MHz - - Through Hole PG-TO220-2 -55°C ~ 175°C
IDW75D65D1XKSA1

IDW75D65D1XKSA1

DIODE GEN PURP 650V 150A TO247-3

Infineon Technologies

2,129 -
RFQ
IDW75D65D1XKSA1

Datasheet

- TO-247-3 Tube Active Standard 650 V 150A 1.7 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 108 ns 40 µA @ 650 V - - - Through Hole PG-TO247-3 -40°C ~ 175°C
JANTX1N5615

JANTX1N5615

DIODE GEN PURP 200V 1A A-PAK

Microchip Technology

2,371 -
RFQ
JANTX1N5615

Datasheet

- A, Axial Bulk Active Standard 200 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 200 V 45pF @ 12V, 1MHz Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
C3D10060A

C3D10060A

DIODE SIL CARB 600V 30A TO220-2

Wolfspeed, Inc.

1,991 -
RFQ
C3D10060A

Datasheet

Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 30A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 480pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
C3D10060G

C3D10060G

DIODE SIL CARB 600V 29A TO263-2

Wolfspeed, Inc.

1,068 -
RFQ
C3D10060G

Datasheet

Z-Rec® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active SiC (Silicon Carbide) Schottky 600 V 29A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 480pF @ 0V, 1MHz - - Surface Mount TO-263-2 -55°C ~ 175°C
IDM10G120C5XTMA1

IDM10G120C5XTMA1

DIODE SIL CARB 1.2KV 38A TO252-2

Infineon Technologies

4,234 -
RFQ
IDM10G120C5XTMA1

Datasheet

CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 38A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 62 µA @ 12 V 29pF @ 800V, 1MHz - - Surface Mount PG-TO252-2 -55°C ~ 150°C
GD05MPS17J-TR

GD05MPS17J-TR

1700V 5A TO-247-2 SIC SCHOTTKY M

GeneSiC Semiconductor

1,286 -
RFQ
GD05MPS17J-TR

Datasheet

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1700 V 15A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 361pF @ 1V, 1MHz - - Surface Mount TO-263-7 -55°C ~ 175°C
GD05MPS17H

GD05MPS17H

DIODE SIL CARB 1.7KV 15A TO247-2

GeneSiC Semiconductor

993 -
RFQ
GD05MPS17H

Datasheet

SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 15A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 361pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
VS-90EPS12L-M3

VS-90EPS12L-M3

DIODE GEN PURP 1.2KV 90A TO247AD

Vishay General Semiconductor - Diodes Division

862 -
RFQ
VS-90EPS12L-M3

Datasheet

- TO-247-2 Tube Active Standard 1200 V 90A 1.2 V @ 90 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Through Hole TO-247AD -40°C ~ 150°C
RURG5060-F085

RURG5060-F085

DIODE GEN PURP 600V 50A TO247-2

onsemi

387 -
RFQ
RURG5060-F085

Datasheet

- TO-247-2 Tube Active Avalanche 600 V 50A 1.6 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 250 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
1N5552

1N5552

DIODE GEN PURP 600V 3A AXIAL

Microchip Technology

911 -
RFQ
1N5552

Datasheet

- B, Axial Bulk Active Standard 600 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 600 V - - - Through Hole B, Axial -65°C ~ 175°C
C4D05120E

C4D05120E

DIODE SIL CARB 1.2KV 19A TO252-2

Wolfspeed, Inc.

3,241 -
RFQ
C4D05120E

Datasheet

Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active SiC (Silicon Carbide) Schottky 1200 V 19A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 1200 V 390pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
C4D05120A

C4D05120A

DIODE SIL CARB 1.2KV 19A TO220-2

Wolfspeed, Inc.

587 -
RFQ
C4D05120A

Datasheet

Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 19A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 1200 V 390pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
APT100S20BG

APT100S20BG

DIODE SCHOTTKY 200V 120A TO247

Microchip Technology

3,777 -
RFQ
APT100S20BG

Datasheet

- TO-247-2 Tube Active Schottky 200 V 120A 950 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 2 mA @ 200 V - - - Through Hole TO-247 [B] -55°C ~ 150°C
DSEP30-12A

DSEP30-12A

DIODE GEN PURP 1.2KV 30A TO247AD

IXYS

5,978 -
RFQ
DSEP30-12A

Datasheet

HiPerFRED™ TO-247-2 Tube Active Standard 1200 V 30A 2.74 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 250 µA @ 1200 V - - - Through Hole TO-247AD -55°C ~ 175°C
VS-90EPS16L-M3

VS-90EPS16L-M3

DIODE GEN PURP 1.6KV 90A TO247AD

Vishay General Semiconductor - Diodes Division

435 -
RFQ
VS-90EPS16L-M3

Datasheet

- TO-247-2 Tube Active Standard 1600 V 90A 1.21 V @ 90 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1600 V - - - Through Hole TO-247AD -40°C ~ 150°C
1N5712

1N5712

DIODE SCHOTTKY 20V 75MA DO35

Microchip Technology

529 -
RFQ
1N5712

Datasheet

- DO-204AH, DO-35, Axial Bulk Active Schottky 20 V 75mA 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 2pF @ 0V, 1MHz - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
IDH10G120C5XKSA1

IDH10G120C5XKSA1

DIODE SIL CARB 1.2KV 10A TO220-1

Infineon Technologies

1,175 -
RFQ
IDH10G120C5XKSA1

Datasheet

CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 62 µA @ 1200 V 525pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
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