Single Diodes

Manufacturer Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Single Diodes

TomatoElec supplies single diodes for industrial, automotive, communication, power and general electronics applications. Our sourcing support covers commonly used single diode products for rectification, switching, signal control and protection circuit designs.

We support flexible RFQ service for single diode sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

With access to multiple supply channels, TomatoElec aims to provide customers with reliable single diode sourcing support, responsive quotation and global delivery service.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
IDH10G120C5XKSA1

IDH10G120C5XKSA1

DIODE SIL CARB 1.2KV 10A TO220-1

Infineon Technologies

1,175 -
RFQ
IDH10G120C5XKSA1

Datasheet

CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 62 µA @ 1200 V 525pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
1N5806US

1N5806US

DIODE GEN PURP 150V 1A D-5A

Microchip Technology

72,209 -
RFQ
1N5806US

Datasheet

- SQ-MELF, A Bulk Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz - - Surface Mount D-5A -65°C ~ 175°C
VS-30EPH03-N3

VS-30EPH03-N3

DIODE GP 300V 30A TO247AC

Vishay General Semiconductor - Diodes Division

973 -
RFQ
VS-30EPH03-N3

Datasheet

FRED Pt® TO-247-2 Tube Active Standard 300 V 30A 1.25 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 38 ns 60 µA @ 300 V - - - Through Hole TO-247AC Modified -65°C ~ 175°C
GP3D005A170B

GP3D005A170B

DIODE SIL CARB 1.7KV 21A TO247-2

SemiQ

1,517 -
RFQ
GP3D005A170B

Datasheet

Amp+™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 21A 1.65 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 347pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
RHRG5060-F085

RHRG5060-F085

DIODE GEN PURP 600V 50A TO247-2

onsemi

294 -
RFQ
RHRG5060-F085

Datasheet

- TO-247-2 Tube Active Avalanche 600 V 50A 2.1 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 250 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
VS-65EPS16LHM3

VS-65EPS16LHM3

DIODE GEN PURP 1.6KV 65A TO247AD

Vishay General Semiconductor - Diodes Division

350 -
RFQ
VS-65EPS16LHM3

Datasheet

- TO-247-2 Tube Active Standard 1600 V 65A 1.17 V @ 65 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1600 V - Automotive AEC-Q101 Through Hole TO-247AD -40°C ~ 150°C
STPSC20065GY-TR

STPSC20065GY-TR

DIODE SIL CARBIDE 650V 20A D2PAK

STMicroelectronics

1,785 -
RFQ
STPSC20065GY-TR

Datasheet

ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 20A 1.45 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 600 V 1250pF @ 0V, 1MHz Automotive AEC-Q101 Surface Mount D2PAK -40°C ~ 175°C
1N6642US

1N6642US

DIODE GEN PURP 75V 300MA D-5D

Microchip Technology

1,066 -
RFQ
1N6642US

Datasheet

- SQ-MELF, D Bulk Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz - - Surface Mount D-5D -65°C ~ 175°C
1N6642U

1N6642U

DIODE GEN PURP 75V 300MA D-5D

Microsemi Corporation

445 -
RFQ
1N6642U

Datasheet

- SQ-MELF, D Bulk Active Standard 75 V 300mA 800 mV @ 10 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 µA @ 75 V - - - Surface Mount D-5D -65°C ~ 175°C
CDLL5819/TR

CDLL5819/TR

DIODE SCHOTTKY 45V 1A DO213AA

Microchip Technology

256 -
RFQ
CDLL5819/TR

Datasheet

- DO-213AA Tape & Reel (TR) Active Schottky 45 V 1A 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz - - Surface Mount DO-213AA -65°C ~ 125°C
IDDD16G65C6XTMA1

IDDD16G65C6XTMA1

DIODE SIL CARB 650V 43A HDSOP-10

Infineon Technologies

4,841 -
RFQ
IDDD16G65C6XTMA1

Datasheet

CoolSiC™+ 10-PowerSOP Module Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 43A - No Recovery Time > 500mA (Io) 0 ns 53 µA @ 420 V 783pF @ 1V, 1MHz - - Surface Mount PG-HDSOP-10-1 -55°C ~ 175°C
IDH16G65C6XKSA1

IDH16G65C6XKSA1

DIODE SIL CARB 650V 34A TO220-2

Infineon Technologies

3,011 -
RFQ
IDH16G65C6XKSA1

Datasheet

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 34A 1.35 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 53 µA @ 420 V 783pF @ 1V, 1MHz - - Through Hole PG-TO220-2 -55°C ~ 175°C
1N5418

1N5418

DIODE GEN PURP 400V 3A B SQ-MELF

Microchip Technology

384 -
RFQ
1N5418

Datasheet

- B, Axial Bulk Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - - - Through Hole B, Axial -65°C ~ 175°C
1N5809

1N5809

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

210 -
RFQ
1N5809

Datasheet

- B, Axial Bulk Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz - - Through Hole B, Axial -65°C ~ 175°C
JANTX1N5711-1

JANTX1N5711-1

DIODE SCHOTTKY 70V 33MA DO35

Microchip Technology

132 -
RFQ
JANTX1N5711-1

Datasheet

- DO-204AH, DO-35, Axial Bulk Active Schottky 70 V 33mA 410 mV @ 1 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz Military MIL-PRF-19500/444 Through Hole DO-204AH (DO-35) -65°C ~ 150°C
VS-60EPS16-M3

VS-60EPS16-M3

DIODE GP 1.6KV 60A TO247AC

Vishay General Semiconductor - Diodes Division

668 -
RFQ
VS-60EPS16-M3

Datasheet

- TO-247-2 Tube Active Standard 1600 V 60A 1.15 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1600 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
1N5811US

1N5811US

DIODE GEN PURP 150V 3A B SQ-MELF

Microchip Technology

815 -
RFQ
1N5811US

Datasheet

- SQ-MELF, B Bulk Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
DSEI60-02A

DSEI60-02A

DIODE GEN PURP 200V 69A TO247AD

IXYS

137 -
RFQ
DSEI60-02A

Datasheet

- TO-247-2 Tube Active Standard 200 V 69A 1.08 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 50 µA @ 200 V - - - Through Hole TO-247AD -40°C ~ 150°C
1N6638US

1N6638US

DIODE GEN PURP 125V 300MA D-5D

Microchip Technology

541 -
RFQ
1N6638US

Datasheet

- SQ-MELF, D Bulk Active Standard 125 V 300mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4.5 ns 500 nA @ 125 V 2.5pF @ 0V, 1MHz - - Surface Mount D-5D -65°C ~ 175°C
C4D10120E

C4D10120E

DIODE SIL CARB 1.2KV 33A TO252-2

Wolfspeed, Inc.

5,722 -
RFQ
C4D10120E

Datasheet

Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active SiC (Silicon Carbide) Schottky 1200 V 33A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 1200 V 754pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
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