Taiwan Semiconductor Corporation TSM60NB099PW C1G

TSM60NB099PW C1G Supplier & Distributor

TSM60NB099PW C1G is an electronic component from Taiwan Semiconductor Corporation. TomatoElec is an in-stock independent distributor supporting original component sourcing, inventory checks and BOM purchasing needs.

We support RFQ handling, component availability confirmation and sourcing coordination for OEM, EMS, repair and electronic trading companies.

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Part No.:
TSM60NB099PW C1G
Manufacturer:
Taiwan Semiconductor Corporation
Category:
Single FETs, MOSFETs
Package:
TO-247-3
Description:
MOSFET N-CHANNEL 600V 38A TO247
Quantity:

Unit Price:$0

Ext Price:$0

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Inventory:2,055

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Stock:2,055

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About TSM60NB099PW C1G

Looking for TSM60NB099PW C1G supplier or distributor? Tomato Electronics provides high-quality electronic components including MLCC capacitors, tantalum capacitors, ICs, diodes and more.

Contact us now for quotation and availability of TSM60NB099PW C1G.

TSM60NB099PW C1G Specifications

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Attributes
Property Value
Manufacturer
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
99mOhm @ 11.7A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
62 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
2587 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
329W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247
Category:
Single FETs, MOSFETs
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1. How to order TSM60NB099PW C1G from Hong Kong Tomato Electronics Co., Limited?

You can submit an RFQ for TSM60NB099PW C1G directly on our website. After receiving your request, our sales team will contact you with price, availability, lead time and order details. Once you confirm the quotation, we will help you complete the order process.

2. How does Hong Kong Tomato Electronics Co., Limited ensure that TSM60NB099PW C1G is original and reliable?

Hong Kong Tomato Electronics Co., Limited works with qualified supply channels and applies strict quality control procedures for electronic components including TSM60NB099PW C1G. We pay close attention to supplier screening, product verification and delivery quality to help customers source with confidence.

3. Are the price and inventory of TSM60NB099PW C1G accurate?

The price and inventory of TSM60NB099PW C1G may change due to market conditions and stock movement. We update information as frequently as possible, but final quotation and availability should be confirmed by our sales team. In most cases, quotations are valid for 3 to 5 days.

4. What payment methods are accepted?

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6. What is the return or replacement policy for TSM60NB099PW C1G?

All shipments are checked before dispatch. If there is a confirmed issue related to the delivered TSM60NB099PW C1G, such as incorrect quantity, wrong item or verified product problem, please contact us as soon as possible.

Return or replacement requests are usually accepted only when the part remains unused and in its original packaging, and when the issue is reported within the agreed time after delivery.

Please contact our team first before returning any goods so that we can confirm the issue and provide return instructions.

7. How can I get technical support, such as the datasheet or specifications for TSM60NB099PW C1G?

If you need technical support for TSM60NB099PW C1G, including datasheets, specifications or general product information, please contact our sales team. We will do our best to help you obtain the relevant information.

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Images TSM60NB099PW C1G
Part No. TSM60NB099PW C1G
Manufacturer Taiwan Semiconductor Corporation
Series -
Package/Case TO-247-3
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 11.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2587 pF @ 100 V
FET Feature -
Power Dissipation (Max) 329W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247

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