STMicroelectronics SCTWA35N65G2V

SCTWA35N65G2V Supplier & Distributor

SCTWA35N65G2V is an electronic component from STMicroelectronics. TomatoElec is an in-stock independent distributor supporting original component sourcing, inventory checks and BOM purchasing needs.

We support RFQ handling, component availability confirmation and sourcing coordination for OEM, EMS, repair and electronic trading companies.

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Part No.:
SCTWA35N65G2V
Manufacturer:
STMicroelectronics
Category:
Single FETs, MOSFETs
Package:
TO-247-3
Datasheet:
TomatoElecSCTWA35N65G2V.pdf
Description:
TRANS SJT N-CH 650V 45A TO247
Quantity:

Unit Price:$0

Ext Price:$0

Payment:
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Shipping:
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Inventory:577

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Stock:577

Qty. Unit Price Ext Price
1+$0.000$0.000
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About SCTWA35N65G2V

Looking for SCTWA35N65G2V supplier or distributor? Tomato Electronics provides high-quality electronic components including MLCC capacitors, tantalum capacitors, ICs, diodes and more.

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SCTWA35N65G2V Specifications

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Attributes
Property Value
Manufacturer
STMicroelectronics
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
18V, 20V
Rds On (Max) @ Id, Vgs:
72mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:
3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
73 nC @ 20 V
Vgs (Max):
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds:
73000 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
208W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247 Long Leads
Category:
Single FETs, MOSFETs
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1. How to order SCTWA35N65G2V from Hong Kong Tomato Electronics Co., Limited?

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2. How does Hong Kong Tomato Electronics Co., Limited ensure that SCTWA35N65G2V is original and reliable?

Hong Kong Tomato Electronics Co., Limited works with qualified supply channels and applies strict quality control procedures for electronic components including SCTWA35N65G2V. We pay close attention to supplier screening, product verification and delivery quality to help customers source with confidence.

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Images SCTWA35N65G2V SCTWA35N65G2V-4 SCTWA35N65G2VAG
Part No. SCTWA35N65G2V SCTWA35N65G2V-4 SCTWA35N65G2VAG
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Series - - -
Package/Case TO-247-3 TO-247-4 TO-247-3
Packaging Tube Bulk Tube
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology SiCFET (Silicon Carbide) MOSFET (Metal Oxide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc) 45A (Tc) 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V 18V, 20V 18V, 20V
Rds On (Max) @ Id, Vgs 72mOhm @ 20A, 20V 67mOhm @ 20A, 20V 72mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 3.2V @ 1mA 5V @ 1mA 3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V 73 nC @ 20 V 73 nC @ 20 V
Vgs (Max) +20V, -5V +18V, -5V +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds 73000 pF @ 400 V 1370 pF @ 400 V 1370 pF @ 400 V
FET Feature - - -
Power Dissipation (Max) 208W (Tc) 240W (Tc) 208W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 200°C (TJ) -55°C ~ 175°C (TJ)
Grade - - -
Qualification - - -
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 Long Leads TO-247-4 TO-247 Long Leads

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