STMicroelectronics SCTH35N65G2V-7

SCTH35N65G2V-7 Supplier & Distributor

SCTH35N65G2V-7 is an electronic component from STMicroelectronics. TomatoElec is an in-stock independent distributor supporting original component sourcing, inventory checks and BOM purchasing needs.

We support RFQ handling, component availability confirmation and sourcing coordination for OEM, EMS, repair and electronic trading companies.

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Part No.:
SCTH35N65G2V-7
Manufacturer:
STMicroelectronics
Category:
Single FETs, MOSFETs
Package:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Datasheet:
TomatoElecSCTH35N65G2V-7.pdf
Description:
SICFET N-CH 650V 45A H2PAK-7
Quantity:

Unit Price:$0

Ext Price:$0

Payment:
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Shipping:
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Inventory:1,694

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Stock:1,694

Qty. Unit Price Ext Price
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About SCTH35N65G2V-7

Looking for SCTH35N65G2V-7 supplier or distributor? Tomato Electronics provides high-quality electronic components including MLCC capacitors, tantalum capacitors, ICs, diodes and more.

Contact us now for quotation and availability of SCTH35N65G2V-7.

SCTH35N65G2V-7 Specifications

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Attributes
Property Value
Manufacturer
STMicroelectronics
Series:
-
Package/Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
18V, 20V
Rds On (Max) @ Id, Vgs:
67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
73 nC @ 20 V
Vgs (Max):
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:
1370 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
208W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
H2PAK-7
Category:
Single FETs, MOSFETs
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1. How to order SCTH35N65G2V-7 from Hong Kong Tomato Electronics Co., Limited?

You can submit an RFQ for SCTH35N65G2V-7 directly on our website. After receiving your request, our sales team will contact you with price, availability, lead time and order details. Once you confirm the quotation, we will help you complete the order process.

2. How does Hong Kong Tomato Electronics Co., Limited ensure that SCTH35N65G2V-7 is original and reliable?

Hong Kong Tomato Electronics Co., Limited works with qualified supply channels and applies strict quality control procedures for electronic components including SCTH35N65G2V-7. We pay close attention to supplier screening, product verification and delivery quality to help customers source with confidence.

3. Are the price and inventory of SCTH35N65G2V-7 accurate?

The price and inventory of SCTH35N65G2V-7 may change due to market conditions and stock movement. We update information as frequently as possible, but final quotation and availability should be confirmed by our sales team. In most cases, quotations are valid for 3 to 5 days.

4. What payment methods are accepted?

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6. What is the return or replacement policy for SCTH35N65G2V-7?

All shipments are checked before dispatch. If there is a confirmed issue related to the delivered SCTH35N65G2V-7, such as incorrect quantity, wrong item or verified product problem, please contact us as soon as possible.

Return or replacement requests are usually accepted only when the part remains unused and in its original packaging, and when the issue is reported within the agreed time after delivery.

Please contact our team first before returning any goods so that we can confirm the issue and provide return instructions.

7. How can I get technical support, such as the datasheet or specifications for SCTH35N65G2V-7?

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Images SCTH35N65G2V-7 SCTH35N65G2V-7AG
Part No. SCTH35N65G2V-7 SCTH35N65G2V-7AG
Manufacturer STMicroelectronics STMicroelectronics
Series - -
Package/Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc) 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V 18V, 20V
Rds On (Max) @ Id, Vgs 67mOhm @ 20A, 20V 67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 5V @ 1mA 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V 73 nC @ 20 V
Vgs (Max) +22V, -10V +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V 1370 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 208W (Tc) 208W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Grade - Automotive
Qualification - AEC-Q101
Mounting Type Surface Mount Surface Mount
Supplier Device Package H2PAK-7 H2PAK-7

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