Rohm Semiconductor RJ1L12BGNTLL

RJ1L12BGNTLL Supplier & Distributor

RJ1L12BGNTLL is an electronic component manufactured by Rohm Semiconductor. We are a professional electronic components supplier providing original parts with large stock available in Shenzhen Huaqiangbei.

We supply RJ1L12BGNTLL with competitive pricing, fast global delivery and reliable sourcing services for OEM, EMS and electronic trading companies.

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Part No.:
RJ1L12BGNTLL
Manufacturer:
Rohm Semiconductor
Category:
Single FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
TomatoElecRJ1L12BGNTLL.pdf
Description:
NCH 60V 120A POWER MOSFET : RJ1L
Quantity:

Unit Price:$0

Ext Price:$0

Payment:
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Shipping:
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Inventory:1,993

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Stock:1,993

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About RJ1L12BGNTLL

Looking for RJ1L12BGNTLL supplier or distributor? Tomato Electronics provides high-quality electronic components including MLCC capacitors, tantalum capacitors, ICs, diodes and more.

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RJ1L12BGNTLL Specifications

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Attributes
Property Value
Manufacturer
Rohm Semiconductor
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
2.9mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:
175 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
9000 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
192W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263AB
Category:
Single FETs, MOSFETs
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1. How to order RJ1L12BGNTLL from Hong Kong Tomato Electronics Co., Limited?

You can submit an RFQ for RJ1L12BGNTLL directly on our website. After receiving your request, our sales team will contact you with price, availability, lead time and order details. Once you confirm the quotation, we will help you complete the order process.

2. How does Hong Kong Tomato Electronics Co., Limited ensure that RJ1L12BGNTLL is original and reliable?

Hong Kong Tomato Electronics Co., Limited works with qualified supply channels and applies strict quality control procedures for electronic components including RJ1L12BGNTLL. We pay close attention to supplier screening, product verification and delivery quality to help customers source with confidence.

3. Are the price and inventory of RJ1L12BGNTLL accurate?

The price and inventory of RJ1L12BGNTLL may change due to market conditions and stock movement. We update information as frequently as possible, but final quotation and availability should be confirmed by our sales team. In most cases, quotations are valid for 3 to 5 days.

4. What payment methods are accepted?

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6. What is the return or replacement policy for RJ1L12BGNTLL?

All shipments are checked before dispatch. If there is a confirmed issue related to the delivered RJ1L12BGNTLL, such as incorrect quantity, wrong item or verified product problem, please contact us as soon as possible.

Return or replacement requests are usually accepted only when the part remains unused and in its original packaging, and when the issue is reported within the agreed time after delivery.

Please contact our team first before returning any goods so that we can confirm the issue and provide return instructions.

7. How can I get technical support, such as the datasheet or specifications for RJ1L12BGNTLL?

If you need technical support for RJ1L12BGNTLL, including datasheets, specifications or general product information, please contact our sales team. We will do our best to help you obtain the relevant information.

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Images RJ1L12BGNTLL
Part No. RJ1L12BGNTLL
Manufacturer Rohm Semiconductor
Series -
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Tape & Reel (TR)
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.9mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 175 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 30 V
FET Feature -
Power Dissipation (Max) 192W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263AB

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