onsemi NTR3A30PZT1G-M02

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NTR3A30PZT1G-M02 is an electronic component manufactured by onsemi. We are a professional electronic components supplier providing original parts with large stock available in Shenzhen Huaqiangbei.

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Part No.:
NTR3A30PZT1G-M02
Manufacturer:
onsemi
Category:
Single FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Description:
NTR3A30PZT1G-M02
Quantity:

Unit Price:$0

Ext Price:$0

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Inventory:8,439

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Stock:8,439

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About NTR3A30PZT1G-M02

Looking for NTR3A30PZT1G-M02 supplier or distributor? Tomato Electronics provides high-quality electronic components including MLCC capacitors, tantalum capacitors, ICs, diodes and more.

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NTR3A30PZT1G-M02 Specifications

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Attributes
Property Value
Manufacturer
onsemi
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
38mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
17.6 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
1651 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
480mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)
Category:
Single FETs, MOSFETs
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Images NTR3A30PZT1G NTR3A30PZT1G-M02
Part No. NTR3A30PZT1G NTR3A30PZT1G-M02
Manufacturer onsemi onsemi
Series - -
Package/Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR) Bulk
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 38mOhm @ 3A, 4.5V 38mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17.6 nC @ 4.5 V 17.6 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 1651 pF @ 15 V 1651 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 480mW (Ta) 480mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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