onsemi FDS6612A-NB5E029A

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FDS6612A-NB5E029A is an electronic component manufactured by onsemi. We are a professional electronic components supplier providing original parts with large stock available in Shenzhen Huaqiangbei.

We supply FDS6612A-NB5E029A with competitive pricing, fast global delivery and reliable sourcing services for OEM, EMS and electronic trading companies.

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Part No.:
FDS6612A-NB5E029A
Manufacturer:
onsemi
Category:
Single FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
TomatoElecFDS6612A-NB5E029A.pdf
Description:
SINGLE N-CHANNEL, LOGIC LEVEL, P
Quantity:

Unit Price:$0

Ext Price:$0

Payment:
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Shipping:
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Inventory:4,788

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Stock:4,788

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About FDS6612A-NB5E029A

Looking for FDS6612A-NB5E029A supplier or distributor? Tomato Electronics provides high-quality electronic components including MLCC capacitors, tantalum capacitors, ICs, diodes and more.

Contact us now for quotation and availability of FDS6612A-NB5E029A.

FDS6612A-NB5E029A Specifications

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Attributes
Property Value
Manufacturer
onsemi
Series:
PowerTrench®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
8.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
22mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
7.6 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
560 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Category:
Single FETs, MOSFETs
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Hong Kong Tomato Electronics Co., Limited works with qualified supply channels and applies strict quality control procedures for electronic components including FDS6612A-NB5E029A. We pay close attention to supplier screening, product verification and delivery quality to help customers source with confidence.

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The price and inventory of FDS6612A-NB5E029A may change due to market conditions and stock movement. We update information as frequently as possible, but final quotation and availability should be confirmed by our sales team. In most cases, quotations are valid for 3 to 5 days.

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6. What is the return or replacement policy for FDS6612A-NB5E029A?

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Images FDS6612A FDS6612A-NB5E029A FDS6612A-NB5E029A
Part No. FDS6612A FDS6612A-NB5E029A FDS6612A-NB5E029A
Manufacturer onsemi onsemi onsemi
Series PowerTrench® PowerTrench® PowerTrench®
Package/Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR) Tape & Reel (TR) Bulk
Product Status Obsolete Active Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 8.4A (Ta) 8.4A (Ta) 8.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 8.4A, 10V 22mOhm @ 8.4A, 10V 22mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.6 nC @ 5 V 7.6 nC @ 5 V 7.6 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 560 pF @ 15 V 560 pF @ 15 V 560 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta) 1W (Ta) 1W (Ta)
Operating Temperature -55°C ~ 155°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - - -
Qualification - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC

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