Single Diodes

Manufacturer Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Single Diodes

TomatoElec supplies single diodes for industrial, automotive, communication, power and general electronics applications. Our sourcing support covers commonly used single diode products for rectification, switching, signal control and protection circuit designs.

We support flexible RFQ service for single diode sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

With access to multiple supply channels, TomatoElec aims to provide customers with reliable single diode sourcing support, responsive quotation and global delivery service.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JAN1N4247/TR

JAN1N4247/TR

DIODE GEN PURP 600V 1A

Microchip Technology

2,020 -
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 600 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 600 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
GB05MPS17-247

GB05MPS17-247

DIODE SIL CARB 1.7KV 25A TO247-2

GeneSiC Semiconductor

5,897 -
RFQ
GB05MPS17-247

Datasheet

SiC Schottky MPS™ TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1700 V 25A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 6 µA @ 1700 V 334pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
JAN1N5622

JAN1N5622

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology

5,427 -
RFQ
JAN1N5622

Datasheet

- A, Axial Bulk Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1000 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JAN1N6642US

JAN1N6642US

DIODE GEN PURP 75V 300MA D-5D

Microchip Technology

7,444 -
RFQ
JAN1N6642US

Datasheet

- SQ-MELF, D Bulk Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 40pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
1N5552/TR

1N5552/TR

DIODE GEN PURP 600V 3A B AXIAL

Microchip Technology

2,938 -
RFQ
1N5552/TR

Datasheet

- B, Axial Tape & Reel (TR) Active Standard 600 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 600 V - - - Through Hole B, Axial -65°C ~ 175°C
1N5805

1N5805

DIODE GEN PURP 125V 1A AXIAL

Microchip Technology

6,361 -
RFQ
1N5805

Datasheet

- A, Axial Bulk Discontinued at Digi-Key Standard 125 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 125 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 125°C
DSA9-12F

DSA9-12F

DIODE AVAL 1.2KV 11A DO203AA

IXYS

4,990 -
RFQ

-

- DO-203AA, DO-4, Stud Box Obsolete Avalanche 1200 V 11A 1.4 V @ 36 A Standard Recovery >500ns, > 200mA (Io) - 3 mA @ 1200 V - - - Chassis, Stud Mount DO-203AA -40°C ~ 180°C
APT100D60BG

APT100D60BG

DIODE GEN PURP 600V 100A TO247

Microchip Technology

3,867 -
RFQ
APT100D60BG

Datasheet

- TO-247-2 Bulk Active Standard 600 V 100A 2 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 250 µA @ 600 V - - - Through Hole TO-247 -55°C ~ 150°C
GC15MPS12-247

GC15MPS12-247

DIODE SIL CARB 1.2KV 75A TO247-2

GeneSiC Semiconductor

2,366 -
RFQ
GC15MPS12-247

Datasheet

SiC Schottky MPS™ TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 75A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 14 µA @ 1200 V 1089pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
1N5551

1N5551

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

6,230 -
RFQ
1N5551

Datasheet

- B, Axial Bulk Active Standard 400 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 400 V - - - Through Hole B, Axial -65°C ~ 175°C
JAN1N5711-1/TR

JAN1N5711-1/TR

DIODE SCHOTTKY 70V 33MA DO35

Microchip Technology

6,050 -
RFQ

-

- DO-204AH, DO-35, Axial Tape & Reel (TR) Active Schottky 70 V 33mA 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 70 V 2pF @ 0V, 1MHz Military MIL-PRF-19500/444 Through Hole DO-204AH (DO-35) -65°C ~ 150°C
1N5803E3

1N5803E3

DIODE GEN PURP 80V 1A AXIAL

Microchip Technology

9,564 -
RFQ

-

- Axial Bulk Active Standard 80 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 75 V 25pF @ 10V, 1MHz - - Through Hole Axial -65°C ~ 175°C
1N5622/TR

1N5622/TR

DIODE GEN PURP 1KV 1A

Microchip Technology

3,669 -
RFQ
1N5622/TR

Datasheet

- A, Axial Tape & Reel (TR) Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1 V - - - Through Hole A, Axial -65°C ~ 200°C
VS-95PF140

VS-95PF140

DIODE GEN PURP 1.4KV 95A DO203AB

Vishay General Semiconductor - Diodes Division

3,652 -
RFQ
VS-95PF140

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard 1400 V 95A 1.4 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
STPSC806G-TR

STPSC806G-TR

DIODE SIL CARBIDE 600V 8A D2PAK

STMicroelectronics

5,255 -
RFQ
STPSC806G-TR

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 600 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 600 V 450pF @ 0V, 1MHz - - Surface Mount D2PAK -40°C ~ 175°C
CDLL1A80

CDLL1A80

DIODE SCHOTTKY 80V 1A DO213AB

Microchip Technology

5,320 -
RFQ
CDLL1A80

Datasheet

- DO-213AB, MELF Bulk Active Schottky 80 V 1A 690 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 80 V - - - Surface Mount DO-213AB -
JANTX1N5620/TR

JANTX1N5620/TR

DIODE GEN PURP 800V 1A

Microchip Technology

8,837 -
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 800 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JANTX1N5552/TR

JANTX1N5552/TR

DIODE GEN PURP 600V 5A

Microchip Technology

2,224 -
RFQ
JANTX1N5552/TR

Datasheet

- B, Axial Tape & Reel (TR) Active Standard 600 V 5A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 600 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JAN1N5550

JAN1N5550

DIODE GEN PURP 200V 3A AXIAL

Microchip Technology

6,610 -
RFQ
JAN1N5550

Datasheet

- B, Axial Bulk Active Standard 200 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JAN1N5551

JAN1N5551

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

8,379 -
RFQ
JAN1N5551

Datasheet

- B, Axial Bulk Active Standard 400 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 400 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
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