Single Diodes

Manufacturer Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Single Diodes

TomatoElec supplies single diodes for industrial, automotive, communication, power and general electronics applications. Our sourcing support covers commonly used single diode products for rectification, switching, signal control and protection circuit designs.

We support flexible RFQ service for single diode sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

With access to multiple supply channels, TomatoElec aims to provide customers with reliable single diode sourcing support, responsive quotation and global delivery service.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JAN1N3612

JAN1N3612

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

8,804 -
RFQ
JAN1N3612

Datasheet

- A, Axial Bulk Active Standard 400 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 300 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
JANTX1N5614

JANTX1N5614

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

8,285 -
RFQ
JANTX1N5614

Datasheet

- A, Axial Bulk Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
1N5419/TR

1N5419/TR

DIODE GEN PURP 500V 3A B SQ-MELF

Microchip Technology

5,014 -
RFQ
1N5419/TR

Datasheet

- SQ-MELF, B Tape & Reel (TR) Active Standard 500 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - - - Surface Mount B, SQ-MELF -65°C ~ 175°C
VS-40HF140

VS-40HF140

DIODE GEN PURP 1.4KV 40A DO203AB

Vishay General Semiconductor - Diodes Division

6,213 -
RFQ
VS-40HF140

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard 1400 V 40A 1.5 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 4.5 mA @ 1400 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 160°C
STPSC10H065DLF

STPSC10H065DLF

DIODE SIL CARB 650V 10A PWRFLAT

STMicroelectronics

6,027 -
RFQ
STPSC10H065DLF

Datasheet

- 8-PowerVDFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.55 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 595pF @ 0V, 1MHz - - Surface Mount PowerFlat™ (8x8) HV -40°C ~ 175°C
1N5803/TR

1N5803/TR

DIODE GEN PURP 75V 1A

Microchip Technology

9,496 -
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 75 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 75 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
JAN1N4249/TR

JAN1N4249/TR

DIODE GEN PURP 1KV 1A

Microchip Technology

3,399 -
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 1 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
1N5805/TR

1N5805/TR

DIODE GEN PURP 125V 1A

Microchip Technology

2,507 -
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 125 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 125 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 125°C
1N5804/TR

1N5804/TR

DIODE GEN PURP 100V 1A

Microchip Technology

8,341 -
RFQ
1N5804/TR

Datasheet

- A, Axial Tape & Reel (TR) Active Standard 100 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
VS-41HF10

VS-41HF10

DIODE GEN PURP 100V 40A DO203AB

Vishay General Semiconductor - Diodes Division

8,181 -
RFQ
VS-41HF10

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard 100 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 100 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
VS-41HFR10

VS-41HFR10

DIODE GP REV 100V 40A DO203AB

Vishay General Semiconductor - Diodes Division

5,883 -
RFQ
VS-41HFR10

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 100 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 100 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
SCS220AEC

SCS220AEC

DIODE SIL CARBIDE 650V 20A TO247

Rohm Semiconductor

2,874 -
RFQ
SCS220AEC

Datasheet

- TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 20A 1.55 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 600 V 730pF @ 1V, 1MHz - - Through Hole TO-247 175°C (Max)
1N646UR-1/TR

1N646UR-1/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

2,723 -
RFQ
1N646UR-1/TR

Datasheet

- DO-213AA Tape & Reel (TR) Active Standard 300 V 400mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 200 nA @ 300 V - - - Surface Mount DO-213AA -65°C ~ 175°C
60APU06

60APU06

DIODE GEN PURP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division

2,992 -
RFQ
60APU06

Datasheet

FRED Pt® TO-247-3 Tube Obsolete Standard 600 V 60A 1.68 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 81 ns 50 µA @ 600 V - - - Through Hole TO-247AC -55°C ~ 175°C
60EPU06

60EPU06

DIODE GP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division

4,790 -
RFQ
60EPU06

Datasheet

FRED Pt® TO-247-2 Tube Obsolete Standard 600 V 60A 1.68 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 81 ns 50 µA @ 600 V - - - Through Hole TO-247AC Modified -55°C ~ 175°C
JAN1N4946/TR

JAN1N4946/TR

DIODE GEN PURP 600V 1A

Microchip Technology

4,975 -
RFQ
JAN1N4946/TR

Datasheet

- A, Axial Tape & Reel (TR) Active Standard 600 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 600 V - Military MIL-PRF-19500/360 Through Hole A, Axial -65°C ~ 175°C
MSC015SDA120K

MSC015SDA120K

DIODE SIL CARB 1.2KV 36A TO220-2

Microchip Technology

8,508 -
RFQ

-

- TO-220-2 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 36A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 906pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
JAN1N3612/TR

JAN1N3612/TR

DIODE GEN PURP 400V 1A

Microchip Technology

9,614 -
RFQ
JAN1N3612/TR

Datasheet

- A, Axial Tape & Reel (TR) Active Standard 400 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 300 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
JANTX1N5614/TR

JANTX1N5614/TR

DIODE GEN PURP 200V 1A

Microchip Technology

4,546 -
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
PCFF75H120SWF

PCFF75H120SWF

1200V/75A GEN7 FRD HS SAWN-ON-FO

onsemi

7,887 -
RFQ
PCFF75H120SWF

Datasheet

- Die Bulk Active Standard 1200 V 75A 2.08 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 281.6 ns 10 µA @ 1200 V - - - Surface Mount Die -40°C ~ 175°C
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