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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

    Single FETs, MOSFETs

    Manufacturer Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package

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    FETs, MOSFETs

    TomatoElec supplies FETs and MOSFETs for industrial, automotive, power control, motor drive and general electronics applications. Our sourcing support covers field effect transistors, power MOSFETs and other commonly used switching and control semiconductor products.

    We support flexible RFQ service for FET and MOSFET sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

    With access to multiple supply channels, TomatoElec aims to provide customers with reliable FET and MOSFET sourcing support, responsive quotation and global delivery service.

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    RX3G18BBGC16

    RX3G18BBGC16

    NCH 40V 180A, TO-220AB, POWER MO

    Rohm Semiconductor

    		 937 -
    RFQ
    		RX3G18BBGC16

    Datasheet

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 1.47mOhm @ 90A, 10V 2.5V @ 1mA 210 nC @ 10 V ±20V 13200 pF @ 20 V - 192W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    NTHL075N065SC1

    NTHL075N065SC1

    SILICON CARBIDE (SIC) MOSFET - E

    onsemi

    		 730 -
    RFQ
    		NTHL075N065SC1

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 38A (Tc) 15V, 18V 85mOhm @ 15A, 18V 4.3V @ 5mA 61 nC @ 18 V +22V, -8V 1196 pF @ 325 V - 148W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
    SIHK075N60EF-T1GE3

    SIHK075N60EF-T1GE3

    E SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    		 1,926 -
    RFQ
    		SIHK075N60EF-T1GE3

    Datasheet

         		EF 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 71mOhm @ 15A, 10V 5V @ 250µA 72 nC @ 10 V ±30V 2954 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
    C3M0350120J-TR

    C3M0350120J-TR

    SIC, MOSFET, 350M,1200V, TO-263-

    Wolfspeed, Inc.

    		 777 -
    RFQ
    		C3M0350120J-TR

    Datasheet

         		C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 7.2A (Tc) 15V 455mOhm @ 3.6A, 15V 3.6V @ 1mA 13 nC @ 15 V +15V, -4V 345 pF @ 1000 V - 40.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263-7
    MSC060SMA070SCT/R

    MSC060SMA070SCT/R

    MOSFET SIC 700 V 60 MOHM PSMT

    Microchip Technology

    		 1,300 -
    RFQ

    -

    		 - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    MSC060SMA070SDT/R

    MSC060SMA070SDT/R

    MOSFET SIC 700 V 60 MOHM TO-263-

    Microchip Technology

    		 790 -
    RFQ
    		MSC060SMA070SDT/R

    Datasheet

         		mSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 700 V 51A (Tc) 18V, 20V 75mOhm @ 20A, 20V 5V @ 1mA 56 nC @ 20 V +23V, -10V 1160 pF @ 700 V - 240W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    IMZA65R050M2HXKSA1

    IMZA65R050M2HXKSA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 205 -
    RFQ
    		IMZA65R050M2HXKSA1

    Datasheet

         		CoolSiC™ Gen 2 TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 38A (Tc) 15V, 20V 46mOhm @ 18.2A, 20V 5.6V @ 3.7mA 22 nC @ 18 V +23V, -7V 790 pF @ 400 V - 153W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-8
    SICW1000N170A-BP

    SICW1000N170A-BP

    N-CHANNEL MOSFET,TO-247AB

    Micro Commercial Co

    		 300 -
    RFQ
    		SICW1000N170A-BP

    Datasheet

         		- TO-247-3 Bulk Active N-Channel SiCFET (Silicon Carbide) 1700 V 3A 15V, 20V 1.32Ohm @ 1.5A, 20V 4.5V @ 1mA 15.5 nC @ 20 V +25V, -5V 124 pF @ 1000 V - 69W -55°C ~ 150°C (TJ) - - Through Hole TO-247AB
    MSJB11N80A-TP

    MSJB11N80A-TP

    N-CHANNEL MOSFET, D2-PAK

    Micro Commercial Co

    		 1,600 -
    RFQ
    		MSJB11N80A-TP

    Datasheet

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 470mOhm @ 7.1A, 10V 4.5V @ 250µA 24 nC @ 10 V ±20V 958 pF @ 400 V - 156W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    AOK060V65X2

    AOK060V65X2

    650V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 240 -
    RFQ
    		AOK060V65X2

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 29A (Tc) 15V 80mOhm @ 6A, 15V 3.5V @ 6mA 39.4 nC @ 15 V +15V, -5V 1165 pF @ 400 V - 103W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
    AOM060V65X2

    AOM060V65X2

    650V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 240 -
    RFQ
    		AOM060V65X2

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 29A (Tc) 15V 80mOhm @ 6A, 15V 3.5V @ 6mA 39.4 nC @ 15 V +15V, -5V 1165 pF @ 400 V - 103W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    SIHF074N65E-GE3

    SIHF074N65E-GE3

    E SERIES POWER MOSFET TO-220 FUL

    Vishay Siliconix

    		 988 -
    RFQ
    		SIHF074N65E-GE3

    Datasheet

         		E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) 10V 79mOhm @ 15A, 10V 5V @ 250µA 80 nC @ 10 V ±30V 2904 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    FCMT080N65S3

    FCMT080N65S3

    MOSFET N-CH 650V 38A 4TDFN

    onsemi

    		 3,000 -
    RFQ

    -

    		 SuperFET® III 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 80mOhm @ 19A, 10V 4.5V @ 880µA 71 nC @ 10 V ±30V 2765 pF @ 400 V - 260W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 4-TDFN (8x8)
    SICW400N170A-BP

    SICW400N170A-BP

    MOSFET N-CH 1700V 6A TO247AB

    Micro Commercial Co

    		 1,795 -
    RFQ
    		SICW400N170A-BP

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1700 V 6A (Tc) 16V, 20V 500mOhm @ 3A, 20V 4.5V @ 5mA 31 nC @ 20 V +25V, -5V 333 pF @ 1000 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AB
    NTBG032N065M3S

    NTBG032N065M3S

    SIC MOS D2PAK-7L 32MOHM 650V M3S

    onsemi

    		 615 -
    RFQ

    -

    		 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 52A (Tc) 15V, 18V 44mOhm @ 15A, 18V 4V @ 7.5mA 55 nC @ 18 V +22V, -8V 1409 pF @ 400 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK-7
    PSMN015N10NS2_R2_00201

    PSMN015N10NS2_R2_00201

    100V/ 1.5M / TOLL FOR ESS/ BBU/

    Panjit International Inc.

    		 1,484 -
    RFQ
    		PSMN015N10NS2_R2_00201

    Datasheet

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 395A 4.5V, 10V - - 128 nC @ 10 V ±20V - - - - - - Surface Mount TOLL
    IMT40R025M2HXTMA1

    IMT40R025M2HXTMA1

    SIC-MOS

    Infineon Technologies

    		 1,988 -
    RFQ
    		IMT40R025M2HXTMA1

    Datasheet

         		CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 9A (Ta), 68A (Tc) 15V, 18V 32.1mOhm @ 15.7A, 18V 5.6V @ 5.6mA 36 nC @ 18 V +23V, -7V 1690 pF @ 200 V - 3.8W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-2
    IMZA75R060M1HXKSA1

    IMZA75R060M1HXKSA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 238 -
    RFQ
    		IMZA75R060M1HXKSA1

    Datasheet

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 32A (Tc) 15V, 20V 55mOhm @ 11.1A, 20V 5.6V @ 4mA 23 nC @ 18 V +23V, -5V 779 pF @ 500 V - 144W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4
    AOK150V120X2Q

    AOK150V120X2Q

    1200V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 240 -
    RFQ
    		AOK150V120X2Q

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 20A (Tc) 15V 195mOhm @ 3.9A, 15V 3.6V @ 3.9mA 28.3 nC @ 15 V +18V, -8V 664 pF @ 800 V - 115W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
    PJMP099N60EC_T0_00601

    PJMP099N60EC_T0_00601

    600V/ 99M / 39A/ EASY TO DRIVER

    Panjit International Inc.

    		 2,000 -
    RFQ
    		PJMP099N60EC_T0_00601

    Datasheet

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 39A (Tc) 10V 99mOhm @ 19.5A, 10V 4V @ 250µA 60 nC @ 10 V ±30V 2568 pF @ 400 V - 308W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB-L
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