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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

    Single FETs, MOSFETs

    Manufacturer Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package

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    FETs, MOSFETs

    TomatoElec supplies FETs and MOSFETs for industrial, automotive, power control, motor drive and general electronics applications. Our sourcing support covers field effect transistors, power MOSFETs and other commonly used switching and control semiconductor products.

    We support flexible RFQ service for FET and MOSFET sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

    With access to multiple supply channels, TomatoElec aims to provide customers with reliable FET and MOSFET sourcing support, responsive quotation and global delivery service.

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    MCBS260N10Y-TP

    MCBS260N10Y-TP

    N-CHANNEL MOSFET,TO-263-7

    Micro Commercial Co

    		 1,508 -
    RFQ
    		MCBS260N10Y-TP

    Datasheet

         		- TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Active N-Channel MOSFET (Metal Oxide) 100 V 260A (Tc) 10V 1.8mOhm @ 30A, 10V 4V @ 250µA 161 nC @ 10 V ±20V 10589 pF @ 25 V - 375W (Tj) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    SIHG24N65E-GE3

    SIHG24N65E-GE3

    MOSFET N-CH 650V 24A TO247AC

    Vishay Siliconix

    		 610 -
    RFQ
    		SIHG24N65E-GE3

    Datasheet

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2740 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    CDF56G7032N TR13 PBFREE

    CDF56G7032N TR13 PBFREE

    SURFACE MOUNT MOSFET

    Central Semiconductor Corp

    		 2,500 -
    RFQ

    -

    		 - 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 700 V 18A (Tc) 6V 140mOhm @ 5A, 6V 2.5V @ 17.2mA 3.5 nC @ 6 V +7V, -6V 125 pF @ 400 V - 1.1W (Ta), 113W (Tc) -55°C ~ 155°C (TJ) - - Surface Mount, Wettable Flank 8-DFN (5x6)
    TK095N65Z5,S1F(S

    TK095N65Z5,S1F(S

    650V DTMOS6-HIGH SPEED DIODE

    Toshiba Semiconductor and Storage

    		 195 -
    RFQ

    -

    		 DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 29A (Ta) 10V 95mOhm @ 14.5A, 10V 4.5V @ 1.27mA 50 nC @ 10 V ±30V 2880 pF @ 300 V - 230W (Tc) 150°C - - Through Hole TO-247
    XP10NA1R5TL

    XP10NA1R5TL

    MOSFET N-CH 100V 300A TOLL

    YAGEO XSEMI

    		 987 -
    RFQ
    		XP10NA1R5TL

    Datasheet

         		XP10NA1R5 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 300A (Tc) 10V 1.5mOhm @ 100A, 10V 4V @ 250µA 304 nC @ 10 V ±20V 16960 pF @ 80 V - 3.75W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TOLL
    MSC180SMA120SDT/R

    MSC180SMA120SDT/R

    MOSFET SIC 1200 V 180 MOHM TO-26

    Microchip Technology

    		 773 -
    RFQ
    		MSC180SMA120SDT/R

    Datasheet

         		mSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 21A (Tc) 18V, 20V 225mOhm @ 8A, 20V 5V @ 500µA 36 nC @ 20 V +23V, -10V 481 pF @ 1.2 kV - 146W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    SIHF085N60EF-GE3

    SIHF085N60EF-GE3

    EF SERIES POWER MOSFET TO-220 FU

    Vishay Siliconix

    		 1,000 -
    RFQ
    		SIHF085N60EF-GE3

    Datasheet

         		EF TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 84mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2733 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    IPW95R130PFD7XKSA1

    IPW95R130PFD7XKSA1

    HIGH POWER_NEW

    Infineon Technologies

    		 314 -
    RFQ
    		IPW95R130PFD7XKSA1

    Datasheet

         		CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 950 V 36.5A 10V - - 141 nC @ 10 V ±20V - - 227W -55°C ~ 150°C - - Through Hole PG-TO247-3-41
    NTMTS002N08MC

    NTMTS002N08MC

    PTNG 80V IN CEBU PQFN88

    onsemi

    		 2,948 -
    RFQ
    		NTMTS002N08MC

    Datasheet

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 29A (Ta), 229A (Tc) 6V, 10V 2mOhm @ 90A, 10V 4V @ 540µA 125 nC @ 10 V ±20V 8900 pF @ 40 V - 3.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFNW (8.3x8.4)
    STW18NM60N

    STW18NM60N

    MOSFET N-CH 600V 13A TO247-3

    STMicroelectronics

    		 534 -
    RFQ
    		STW18NM60N

    Datasheet

         		MDmesh™ II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 285mOhm @ 6.5A, 10V 4V @ 250µA 35 nC @ 10 V ±25V 1000 pF @ 50 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    GS-065-011-6-LR-MR

    GS-065-011-6-LR-MR

    GS-065-011-6-LR-MR

    Infineon Technologies Canada Inc.

    		 235 -
    RFQ

    -

    		 - 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 700 V 12.2A (Tc) 6V 180mOhm @ 3.2A, 6V 2.6V @ 2.4mA 2.2 nC @ 6 V +7V, -10V 70 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (8x8)
    GS-065-011-6-L-MR

    GS-065-011-6-L-MR

    GS-065-011-6-L-MR

    Infineon Technologies Canada Inc.

    		 227 -
    RFQ

    -

    		 - 8-PowerVDFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 700 V 12.2A (Tc) 6V 180mOhm @ 3.2A, 6V 2.6V @ 2.4mA 2.2 nC @ 6 V +7V, -10V 70 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
    SIJH5100E-T1-GE3

    SIJH5100E-T1-GE3

    N-CHANNEL 100 V (D-S) 175C MOSFE

    Vishay Siliconix

    		 1,942 -
    RFQ
    		SIJH5100E-T1-GE3

    Datasheet

         		TrenchFET® PowerPAK® 8 x 8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Ta), 277A (Tc) 7.5V, 10V 1.89mOhm @ 20A, 10V 4V @ 250µA 128 nC @ 10 V ±20V 6900 pF @ 50 V - 3.3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® 8 x 8
    IMTA65R060M2HXTMA1

    IMTA65R060M2HXTMA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 367 -
    RFQ
    		IMTA65R060M2HXTMA1

    Datasheet

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    IMT40R036M2HXTMA1

    IMT40R036M2HXTMA1

    SIC-MOS

    Infineon Technologies

    		 2,000 -
    RFQ
    		IMT40R036M2HXTMA1

    Datasheet

         		CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 7.6A (Ta), 50A (Tc) 15V, 18V 45.7mOhm @ 11.1A, 18V 5.6V @ 4mA 26 nC @ 18 V +23V, -7V 1170 pF @ 200 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-2
    FDH210N08

    FDH210N08

    MOSFET N-CH 75V TO247-3

    onsemi

    		 560 -
    RFQ
    		FDH210N08

    Datasheet

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 75 V 210A (Tc) 10V - - - ±20V - - 462W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
    AIMBG75R090M1HXTMA1

    AIMBG75R090M1HXTMA1

    AIMBG75R090M1HXTMA1

    Infineon Technologies

    		 980 -
    RFQ

    -

    		 CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 24A (Tj) 15V, 20V 83mOhm @ 7.4A, 20V 5.6V @ 2.6mA 15 nC @ 18 V +23V, -5V 542 pF @ 500 V - 128W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7
    NTMTS0D4N04CTXG

    NTMTS0D4N04CTXG

    MOSFET N-CH 40V 79.8A/558A 8DFNW

    onsemi

    		 2,889 -
    RFQ
    		NTMTS0D4N04CTXG

    Datasheet

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 79.8A (Ta), 558A (Tc) 10V 0.45mOhm @ 50A, 10V 4V @ 250µA 251 nC @ 10 V ±20V 16500 pF @ 20 V - 5W (Ta), 244W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFNW (8.3x8.4)
    NTMTSC4D2N10GTXG

    NTMTSC4D2N10GTXG

    100V MVSOA IN DFNW8(PQFN8X8) PAC

    onsemi

    		 2,670 -
    RFQ
    		NTMTSC4D2N10GTXG

    Datasheet

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 21A (Ta), 178A (Tc) 10V 4.2mOhm @ 88A, 10V 4V @ 450µA 159 nC @ 10 V ±20V 10450 pF @ 50 V - 3.9W (Ta), 267W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount, Wettable Flank 8-TDFNW (8.3x8.4)
    R6024ENZ4C13

    R6024ENZ4C13

    MOSFET N-CH 600V 24A TO247

    Rohm Semiconductor

    		 594 -
    RFQ
    		R6024ENZ4C13

    Datasheet

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V, 15V 165mOhm @ 24A, 15V - 70 nC @ 15 V ±20V - - 245W (Tc) - - - Through Hole TO-247
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