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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

    Single FETs, MOSFETs

    Manufacturer Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package

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    FETs, MOSFETs

    TomatoElec supplies FETs and MOSFETs for industrial, automotive, power control, motor drive and general electronics applications. Our sourcing support covers field effect transistors, power MOSFETs and other commonly used switching and control semiconductor products.

    We support flexible RFQ service for FET and MOSFET sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

    With access to multiple supply channels, TomatoElec aims to provide customers with reliable FET and MOSFET sourcing support, responsive quotation and global delivery service.

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    IXTT3N200P3HV

    IXTT3N200P3HV

    MOSFET N-CH 2000V 3A TO268

    Littelfuse Inc.

    		 300 -
    RFQ
    		IXTT3N200P3HV

    Datasheet

         		Polar P3™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 2000 V 3A (Tc) 10V 8Ohm @ 1.5A, 10V 5V @ 250µA 70 nC @ 10 V ±20V 1860 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268HV (IXTT)
    SCT3040KW7TL

    SCT3040KW7TL

    SICFET N-CH 1200V 56A TO263-7

    Rohm Semiconductor

    		 986 -
    RFQ
    		SCT3040KW7TL

    Datasheet

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 56A (Tc) - 52mOhm @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 1337 pF @ 800 V - 267W 175°C (TJ) - - Surface Mount TO-263-7
    SCT3030ALHRC11

    SCT3030ALHRC11

    SICFET N-CH 650V 70A TO247N

    Rohm Semiconductor

    		 445 -
    RFQ
    		SCT3030ALHRC11

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 70A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 1526 pF @ 500 V - 262W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
    STY112N65M5

    STY112N65M5

    MOSFET N-CH 650V 96A MAX247

    STMicroelectronics

    		 543 -
    RFQ
    		STY112N65M5

    Datasheet

         		MDmesh™ V TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 96A (Tc) 10V 22mOhm @ 47A, 10V 5V @ 250µA 350 nC @ 10 V ±25V 16870 pF @ 100 V - 625W (Tc) 150°C (TJ) - - Through Hole MAX247™
    IXTX8N150L

    IXTX8N150L

    MOSFET N-CH 1500V 8A PLUS247-3

    IXYS

    		 256 -
    RFQ
    		IXTX8N150L

    Datasheet

         		Linear TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 1500 V 8A (Tc) 20V 3.6Ohm @ 4A, 20V 8V @ 250µA 250 nC @ 15 V ±30V 8000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
    SCT3040KLHRC11

    SCT3040KLHRC11

    SICFET N-CH 1200V 55A TO247N

    Rohm Semiconductor

    		 849 -
    RFQ
    		SCT3040KLHRC11

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 18V 52mOhm @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 1337 pF @ 800 V - 262W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
    S2M0025120D

    S2M0025120D

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 300 -
    RFQ
    		S2M0025120D

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 63A (Tj) 20V 34mOhm @ 50A, 20V 4V @ 15mA 130 nC @ 20 V +25V, -10V 4402 pF @ 1000 V - 446W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
    S2M0025120K

    S2M0025120K

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 270 -
    RFQ
    		S2M0025120K

    Datasheet

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 63A (Tc) 20V 34mOhm @ 50A, 20V 4V @ 15mA 130 nC @ 20 V +25V, -10V 4402 pF @ 1000 V - 446W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    IXFN80N50Q3

    IXFN80N50Q3

    MOSFET N-CH 500V 63A SOT227B

    IXYS

    		 140 -
    RFQ
    		IXFN80N50Q3

    Datasheet

         		HiPerFET™, Q3 Class SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 63A (Tc) 10V 65mOhm @ 40A, 10V 6.5V @ 8mA 200 nC @ 10 V ±30V 10000 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
    IXTN17N120L

    IXTN17N120L

    MOSFET N-CH 1200V 15A SOT-227B

    Littelfuse Inc.

    		 240 -
    RFQ
    		IXTN17N120L

    Datasheet

         		Linear SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 15A (Tc) 20V 900mOhm @ 8.5A, 20V 5V @ 250µA 155 nC @ 15 V ±30V 8300 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
    SCT3022ALHRC11

    SCT3022ALHRC11

    SICFET N-CH 650V 93A TO247N

    Rohm Semiconductor

    		 2,246 -
    RFQ
    		SCT3022ALHRC11

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 93A (Tc) 18V 28.6mOhm @ 36A, 18V 5.6V @ 18.2mA 133 nC @ 18 V +22V, -4V 2208 pF @ 500 V - 339W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
    SCT3030KLHRC11

    SCT3030KLHRC11

    SICFET N-CH 1200V 72A TO247N

    Rohm Semiconductor

    		 580 -
    RFQ
    		SCT3030KLHRC11

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 72A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 131 nC @ 18 V +22V, -4V 2222 pF @ 800 V - 339W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
    IXTB62N50L

    IXTB62N50L

    MOSFET N-CH 500V 62A PLUS264

    Littelfuse Inc.

    		 195 -
    RFQ
    		IXTB62N50L

    Datasheet

         		Linear TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 62A (Tc) 20V 100mOhm @ 31A, 20V 5.5V @ 250µA 550 nC @ 20 V ±30V 11500 pF @ 25 V - 800W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS264™
    IXTX1R4N450HV

    IXTX1R4N450HV

    MOSFET N-CH 4500V 1.4A TO247PLUS

    Littelfuse Inc.

    		 297 -
    RFQ
    		IXTX1R4N450HV

    Datasheet

         		- TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 4500 V 1.4A (Tc) 10V 40Ohm @ 50mA, 10V 6V @ 250µA 88 nC @ 10 V ±20V 3300 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247PLUS-HV
    IXTN30N100L

    IXTN30N100L

    MOSFET N-CH 1000V 30A SOT227B

    Littelfuse Inc.

    		 593 -
    RFQ
    		IXTN30N100L

    Datasheet

         		Linear SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) 20V 450mOhm @ 15A, 20V 5.5V @ 250µA 545 nC @ 20 V ±30V 13700 pF @ 25 V - 800W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
    IXTF1R4N450

    IXTF1R4N450

    MOSFET N-CH 4500V 1.4A I4PAC

    IXYS

    		 41 -
    RFQ
    		IXTF1R4N450

    Datasheet

         		- i4-Pac™-5 (3 Leads) Tube Active N-Channel MOSFET (Metal Oxide) 4500 V 1.4A (Tc) 10V 40Ohm @ 50mA, 10V 6V @ 250µA 88 nC @ 10 V ±20V 3300 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS i4-PAC™
    SCT3017ALGC11

    SCT3017ALGC11

    650V, 118A, THD, TRENCH-STRUCTUR

    Rohm Semiconductor

    		 435 -
    RFQ
    		SCT3017ALGC11

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 118A (Tc) 18V 22.1mOhm @ 47A, 18V 5.6V @ 23.5mA 172 nC @ 18 V +22V, -4V 2884 pF @ 500 V - 427W 175°C (TJ) - - Through Hole TO-247N
    SCT3017ALHRC11

    SCT3017ALHRC11

    SICFET N-CH 650V 118A TO247N

    Rohm Semiconductor

    		 1,098 -
    RFQ
    		SCT3017ALHRC11

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 118A (Tc) 18V 22.1mOhm @ 47A, 18V 5.6V @ 23.5mA 172 nC @ 18 V +22V, -4V 2884 pF @ 500 V - 427W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
    SCT3022KLHRC11

    SCT3022KLHRC11

    SICFET N-CH 1200V 95A TO247N

    Rohm Semiconductor

    		 1,127 -
    RFQ
    		SCT3022KLHRC11

    Datasheet

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 95A (Tc) 18V 28.6mOhm @ 36A, 18V 5.6V @ 18.2mA 178 nC @ 18 V +22V, -4V 2879 pF @ 800 V - 427W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
    APTM100UM45DAG

    APTM100UM45DAG

    MOSFET N-CH 1000V 215A SP6

    Microchip Technology

    		 34 -
    RFQ
    		APTM100UM45DAG

    Datasheet

         		POWER MOS 7® SP6 Bulk Active N-Channel MOSFET (Metal Oxide) 1000 V 215A (Tc) 10V 52mOhm @ 107.5A, 10V 5V @ 30mA 1602 nC @ 10 V ±30V 42700 pF @ 25 V - 5000W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP6
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