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    Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

    Single FETs, MOSFETs

    Manufacturer Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package

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    FETs, MOSFETs

    TomatoElec supplies FETs and MOSFETs for industrial, automotive, power control, motor drive and general electronics applications. Our sourcing support covers field effect transistors, power MOSFETs and other commonly used switching and control semiconductor products.

    We support flexible RFQ service for FET and MOSFET sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

    With access to multiple supply channels, TomatoElec aims to provide customers with reliable FET and MOSFET sourcing support, responsive quotation and global delivery service.

    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    FCH47N60F-F133

    FCH47N60F-F133

    MOSFET N-CH 600V 47A TO247-3

    onsemi

    		 880 -
    RFQ
    		FCH47N60F-F133 Datasheet SuperFET™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 70mOhm @ 23.5A, 10V 5V @ 250µA 270 nC @ 10 V ±30V 8000 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    NTMFS011N15MC

    NTMFS011N15MC

    MOSFET N-CH 150V 10.7A/78A 8PQFN

    onsemi

    		 2,604 -
    RFQ
    		NTMFS011N15MC Datasheet - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 10.7A (Ta), 78A (Tc) 8V, 10V 11.5mOhm @ 35A, 10V 4.5V @ 194µA 46 nC @ 10 V ±20V 3592 pF @ 75 V - 2.7W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    SCT4045DRHRC15

    SCT4045DRHRC15

    750V, 34A, 4-PIN THD, TRENCH-STR

    Rohm Semiconductor

    		 492 -
    RFQ
    		SCT4045DRHRC15 Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 34A (Tc) 18V 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V +21V, -4V 1460 pF @ 500 V - 115W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    IXFK220N20X3

    IXFK220N20X3

    MOSFET N-CH 200V 220A TO264

    Littelfuse Inc.

    		 266 -
    RFQ
    		IXFK220N20X3 Datasheet HiPerFET™, Ultra X3 TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 220A (Tc) 10V 6.2mOhm @ 110A, 10V 4.5V @ 4mA 204 nC @ 10 V ±20V 13600 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264
    SCT3105KLHRC11

    SCT3105KLHRC11

    SICFET N-CH 1200V 24A TO247N

    Rohm Semiconductor

    		 241 -
    RFQ
    		SCT3105KLHRC11 Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 24A (Tc) 18V 137mOhm @ 7.6A, 18V 5.6V @ 3.81mA 51 nC @ 18 V +22V, -4V 574 pF @ 800 V - 134W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
    HUF75852G3

    HUF75852G3

    MOSFET N-CH 150V 75A TO247-3

    onsemi

    		 15 -
    RFQ
    		HUF75852G3 Datasheet UltraFET™ TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 75A (Tc) 10V 16mOhm @ 75A, 10V 4V @ 250µA 480 nC @ 20 V ±20V 7690 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
    SCT4062KRHRC15

    SCT4062KRHRC15

    1200V, 26A, 4-PIN THD, TRENCH-ST

    Rohm Semiconductor

    		 401 -
    RFQ
    		SCT4062KRHRC15 Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 26A (Tc) 18V 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V +21V, -4V 1498 pF @ 800 V - 115W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    SCT3080AW7TL

    SCT3080AW7TL

    SICFET N-CH 650V 29A TO263-7

    Rohm Semiconductor

    		 905 -
    RFQ
    		SCT3080AW7TL Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 29A (Tc) - 104mOhm @ 10A, 18V 5.6V @ 5mA 48 nC @ 18 V +22V, -4V 571 pF @ 500 V - 125W 175°C (TJ) - - Surface Mount TO-263-7
    NTBG060N090SC1

    NTBG060N090SC1

    SIC MOS N-CH 900V 5.8A D2PAK-7

    onsemi

    		 786 -
    RFQ
    		NTBG060N090SC1 Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 900 V 5.8A (Ta), 44A (Tc) 15V 84mOhm @ 20A, 15V 4.3V @ 5mA 88 nC @ 15 V +19V, -10V 1800 pF @ 450 V - 3.6W (Ta), 211W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK-7
    TW083N65C,S1F

    TW083N65C,S1F

    G3 650V SIC-MOSFET TO-247 83MOH

    Toshiba Semiconductor and Storage

    		 142 -
    RFQ
    		TW083N65C,S1F Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 30A (Tc) 18V 113mOhm @ 15A, 18V 5V @ 600µA 28 nC @ 18 V +25V, -10V 873 pF @ 400 V - 111W (Tc) 175°C - - Through Hole TO-247
    IXFT100N30X3HV

    IXFT100N30X3HV

    MOSFET N-CH 300V 100A TO268HV

    Littelfuse Inc.

    		 550 -
    RFQ
    		IXFT100N30X3HV Datasheet HiPerFET™, Ultra X3 TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 300 V 100A (Tc) 10V 13.5mOhm @ 50A, 10V 4.5V @ 4mA 122 nC @ 10 V ±20V 7660 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268HV (IXFT)
    S2M0080120D

    S2M0080120D

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 211 -
    RFQ
    		S2M0080120D Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 41A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 54 nC @ 20 V +25V, -10V 1324 pF @ 1000 V - 231W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
    NTHL033N65S3HF

    NTHL033N65S3HF

    MOSFET N-CH 650V 70A TO247-3

    onsemi

    		 402 -
    RFQ
    		NTHL033N65S3HF Datasheet FRFET®, SuperFET® III TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 70A (Tc) 10V 33mOhm @ 35A, 10V 5V @ 2.5mA 188 nC @ 10 V ±30V 6720 pF @ 400 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    IXFH54N65X3

    IXFH54N65X3

    MOSFET 54A 650V X3 TO247

    Littelfuse Inc.

    		 300 -
    RFQ
    		IXFH54N65X3 Datasheet HiPerFET™, Ultra X3 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 54A (Tc) 10V 59mOhm @ 27A, 10V 5.2V @ 4mA 49 nC @ 10 V ±20V 3360 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXFH)
    IXFX180N25T

    IXFX180N25T

    MOSFET N-CH 250V 180A PLUS247-3

    Littelfuse Inc.

    		 509 -
    RFQ
    		IXFX180N25T Datasheet HiPerFET™, Trench TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 250 V 180A (Tc) 10V 12.9mOhm @ 60A, 10V 5V @ 8mA 345 nC @ 10 V ±20V 28000 pF @ 25 V - 1390W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
    SIHS90N65E-GE3

    SIHS90N65E-GE3

    E SERIES POWER MOSFET SUPER-247,

    Vishay Siliconix

    		 233 -
    RFQ
    		SIHS90N65E-GE3 Datasheet E TO-274AA Tube Active N-Channel MOSFET (Metal Oxide) 650 V 87A (Tc) 10V 29mOhm @ 45A, 10V 4V @ 250µA 591 nC @ 10 V ±30V 11826 pF @ 100 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Through Hole SUPER-247™ (TO-274AA)
    S2M0080120K

    S2M0080120K

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 260 -
    RFQ
    		S2M0080120K Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 41A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 54 nC @ 20 V +25V, -10V 1324 pF @ 1000 V - 231W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    IMZA65R030M1HXKSA1

    IMZA65R030M1HXKSA1

    SILICON CARBIDE MOSFET, PG-TO247

    Infineon Technologies

    		 144 -
    RFQ
    		IMZA65R030M1HXKSA1 Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 53A (Tc) 18V 42mOhm @ 29.5A, 18V 5.7V @ 8.8mA 48 nC @ 18 V +20V, -2V 1643 pF @ 400 V - 197W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-3
    SCT2280KEHRC11

    SCT2280KEHRC11

    1200V, 14A, THD, SILICON-CARBIDE

    Rohm Semiconductor

    		 410 -
    RFQ
    		SCT2280KEHRC11 Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 14A (Tc) 18V 364mOhm @ 4A, 18V 4V @ 1.4mA 36 nC @ 400 V +22V, -6V 667 pF @ 800 V - 108W (Tc) 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
    FCH041N65EF-F155

    FCH041N65EF-F155

    MOSFET N-CH 650V 76A TO247

    onsemi

    		 358 -
    RFQ
    		FCH041N65EF-F155 Datasheet FRFET®, SuperFET® II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Tc) 10V 41mOhm @ 38A, 10V 5V @ 7.6mA 298 nC @ 10 V ±20V 12560 pF @ 100 V - 595W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
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