Single FETs, MOSFETs

Manufacturer Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package

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FETs, MOSFETs

TomatoElec supplies FETs and MOSFETs for industrial, automotive, power control, motor drive and general electronics applications. Our sourcing support covers field effect transistors, power MOSFETs and other commonly used switching and control semiconductor products.

We support flexible RFQ service for FET and MOSFET sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

With access to multiple supply channels, TomatoElec aims to provide customers with reliable FET and MOSFET sourcing support, responsive quotation and global delivery service.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK4P50D(T6RSS-Q)

TK4P50D(T6RSS-Q)

MOSFET N-CH 500V 4A DPAK

Toshiba Semiconductor and Storage

8,825 -
RFQ
TK4P50D(T6RSS-Q)

Datasheet

π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 4A (Ta) 10V 2Ohm @ 2A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK4P55DA(T6RSS-Q)

TK4P55DA(T6RSS-Q)

MOSFET N-CH 550V 3.5A DPAK

Toshiba Semiconductor and Storage

5,355 -
RFQ

-

π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 550 V 3.5A (Ta) 10V 2.45Ohm @ 1.8A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK4P55D(T6RSS-Q)

TK4P55D(T6RSS-Q)

MOSFET N-CH 550V 4A DPAK

Toshiba Semiconductor and Storage

6,302 -
RFQ
TK4P55D(T6RSS-Q)

Datasheet

π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 550 V 4A (Ta) 10V 1.88Ohm @ 2A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK4P60DA(T6RSS-Q)

TK4P60DA(T6RSS-Q)

MOSFET N-CH 600V 3.5A DPAK

Toshiba Semiconductor and Storage

5,443 -
RFQ

-

π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 3.5A (Ta) 10V 2.2Ohm @ 1.8A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK4P60DB(T6RSS-Q)

TK4P60DB(T6RSS-Q)

MOSFET N-CH 600V 3.7A DPAK

Toshiba Semiconductor and Storage

6,312 -
RFQ

-

π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 3.7A (Ta) 10V 2Ohm @ 1.9A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK50E06K3A,S1X(S

TK50E06K3A,S1X(S

MOSFET N-CH 60V 50A TO220-3

Toshiba Semiconductor and Storage

5,229 -
RFQ
TK50E06K3A,S1X(S

Datasheet

U-MOSIV TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 8.5mOhm @ 25A, 10V - 54 nC @ 10 V - - - - - - - Through Hole TO-220-3
TK50E06K3(S1SS-Q)

TK50E06K3(S1SS-Q)

MOSFET N-CH 60V 50A TO220-3

Toshiba Semiconductor and Storage

5,209 -
RFQ

-

U-MOSIV TO-220-3 Tube Obsolete - - - - - - - - - - - - - - - Through Hole TO-220-3
TK50E08K3,S1X(S

TK50E08K3,S1X(S

MOSFET N-CH 75V 50A TO220-3

Toshiba Semiconductor and Storage

8,361 -
RFQ
TK50E08K3,S1X(S

Datasheet

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 50A (Tc) - 12mOhm @ 25A, 10V - 55 nC @ 10 V - - - - - - - Through Hole TO-220-3
TK50E10K3(S1SS-Q)

TK50E10K3(S1SS-Q)

MOSFET N-CH 100V 50A TO-220AB

Toshiba Semiconductor and Storage

8,179 -
RFQ

-

- - Tube Obsolete - - - - - - - - - - - - - - - Through Hole TO-220-3
TK60E08K3,S1X(S

TK60E08K3,S1X(S

MOSFET N-CH 75V 60A TO220-3

Toshiba Semiconductor and Storage

5,814 -
RFQ

-

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 60A - 9mOhm @ 30A, 10V - 75 nC @ 10 V - - - 128W - - - Through Hole TO-220-3
TK60P03M1,RQ(S

TK60P03M1,RQ(S

MOSFET N-CH 30V 60A DPAK

Toshiba Semiconductor and Storage

2,530 -
RFQ

-

U-MOSVI-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 60A (Ta) 4.5V, 10V 6.4mOhm @ 30A, 10V 2.3V @ 500µA 40 nC @ 10 V ±20V 2700 pF @ 10 V - 63W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK65S04K3L(T6L1,NQ

TK65S04K3L(T6L1,NQ

MOSFET N-CH 40V 65A DPAK

Toshiba Semiconductor and Storage

9,208 -
RFQ

-

U-MOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 65A (Ta) 6V, 10V 4.5mOhm @ 32.5A, 10V 3V @ 1mA 63 nC @ 10 V ±20V 2800 pF @ 10 V - 88W (Tc) 175°C (TJ) - - Surface Mount DPAK+
TK80S04K3L(T6L1,NQ

TK80S04K3L(T6L1,NQ

MOSFET N-CH 40V 80A DPAK

Toshiba Semiconductor and Storage

4,452 -
RFQ

-

U-MOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Ta) 6V, 10V 3.1mOhm @ 40A, 10V 3V @ 1mA 87 nC @ 10 V ±20V 4340 pF @ 10 V - 100W (Tc) 175°C (TJ) - - Surface Mount DPAK+
TK80S06K3L(T6L1,NQ

TK80S06K3L(T6L1,NQ

MOSFET N-CH 60V 80A DPAK

Toshiba Semiconductor and Storage

8,637 -
RFQ

-

U-MOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Ta) 6V, 10V 5.5mOhm @ 40A, 10V 3V @ 1mA 85 nC @ 10 V ±20V 4200 pF @ 10 V - 100W (Tc) 175°C (TJ) - - Surface Mount DPAK+
TK8A60DA(STA4,Q,M)

TK8A60DA(STA4,Q,M)

MOSFET N-CH 600V 7.5A TO220SIS

Toshiba Semiconductor and Storage

3,828 -
RFQ

-

π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.5A (Ta) 10V 1Ohm @ 4A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TPC6008-H(TE85L,FM

TPC6008-H(TE85L,FM

MOSFET N-CH 30V 5.9A VS-6

Toshiba Semiconductor and Storage

7,232 -
RFQ
TPC6008-H(TE85L,FM

Datasheet

U-MOSVI-H SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5.9A (Ta) 4.5V, 10V 60mOhm @ 3A, 10V 2.3V @ 100µA 4.8 nC @ 10 V ±20V 300 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
TPC6009-H(TE85L,FM

TPC6009-H(TE85L,FM

MOSFET N-CH 40V 5.3A VS-6

Toshiba Semiconductor and Storage

6,673 -
RFQ
TPC6009-H(TE85L,FM

Datasheet

U-MOSVI-H SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 5.3A (Ta) 4.5V, 10V 81mOhm @ 2.7A, 10V 2.3V @ 100µA 4.7 nC @ 10 V ±20V 290 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
TPC6010-H(TE85L,FM

TPC6010-H(TE85L,FM

MOSFET N-CH 60V 6.1A VS-6

Toshiba Semiconductor and Storage

9,673 -
RFQ
TPC6010-H(TE85L,FM

Datasheet

U-MOSVI-H SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 6.1A (Ta) 4.5V, 10V 59mOhm @ 3.1A, 10V 2.3V @ 100µA 12 nC @ 10 V ±20V 830 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
TPC6011(TE85L,F,M)

TPC6011(TE85L,F,M)

MOSFET N-CH 30V 6A VS-6

Toshiba Semiconductor and Storage

2,346 -
RFQ
TPC6011(TE85L,F,M)

Datasheet

U-MOSIV SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 4.5V, 10V 20mOhm @ 3A, 10V 2.5V @ 1mA 14 nC @ 10 V ±20V 640 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
TPC6012(TE85L,F,M)

TPC6012(TE85L,F,M)

MOSFET N-CH 20V 6A VS-6

Toshiba Semiconductor and Storage

4,709 -
RFQ
TPC6012(TE85L,F,M)

Datasheet

U-MOSIV SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 2.5V, 4.5V 20mOhm @ 3A, 4.5V 1.2V @ 200µA 9 nC @ 5 V ±12V 630 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
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