Single Diodes

Manufacturer Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Single Diodes

TomatoElec supplies single diodes for industrial, automotive, communication, power and general electronics applications. Our sourcing support covers commonly used single diode products for rectification, switching, signal control and protection circuit designs.

We support flexible RFQ service for single diode sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

With access to multiple supply channels, TomatoElec aims to provide customers with reliable single diode sourcing support, responsive quotation and global delivery service.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
SK54-AQ

SK54-AQ

SCHOTTKY SMB 40V 5A 150C AECQ101

Diotec Semiconductor

8,363 -
RFQ
SK54-AQ

Datasheet

- DO-214AA, SMB Tape & Reel (TR) Active Schottky 40 V 5A 550 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 40 V - - - Surface Mount DO-214AA (SMB) -50°C ~ 150°C
NXPSC16650B6J

NXPSC16650B6J

DIODE SIL CARBIDE 650V 16A D2PAK

WeEn Semiconductors

3,106 -
RFQ
NXPSC16650B6J

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 534pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C (Max)
WNSC04650T6J

WNSC04650T6J

DIODE SIL CARBIDE 650V 4A 5DFN

WeEn Semiconductors

4,442 -
RFQ
WNSC04650T6J

Datasheet

- 4-VSFN Exposed Pad Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 650 V 141pF @ 1V, 1MHz - - Surface Mount 5-DFN (8x8) 175°C (Max)
NXPSC12650B6J

NXPSC12650B6J

DIODE SIL CARBIDE 650V 12A D2PAK

WeEn Semiconductors

2,892 -
RFQ
NXPSC12650B6J

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 380pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C (Max)
WNSC10650T6J

WNSC10650T6J

DIODE SIL CARBIDE 650V 10A 5DFN

WeEn Semiconductors

7,135 -
RFQ
WNSC10650T6J

Datasheet

- 4-VSFN Exposed Pad Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 328pF @ 1V, 1MHz - - Surface Mount 5-DFN (8x8) 175°C (Max)
WNSC08650T6J

WNSC08650T6J

DIODE SIL CARBIDE 650V 8A 5DFN

WeEn Semiconductors

8,999 -
RFQ
WNSC08650T6J

Datasheet

- 4-VSFN Exposed Pad Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 267pF @ 1V, 1MHz - - Surface Mount 5-DFN (8x8) 175°C (Max)
VS-C20CP07L-M3

VS-C20CP07L-M3

DIODE SIL CARB 650V 10A TO220AC

Vishay General Semiconductor - Diodes Division

5,592 -
RFQ

-

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.8 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 55 µA @ 650 V 430pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
VS-C16CP07L-M3

VS-C16CP07L-M3

DIODE SIL CARB 650V 16A TO220AC

Vishay General Semiconductor - Diodes Division

6,963 -
RFQ

-

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) - 85 µA @ 650 V 320pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
SM4001-CT

SM4001-CT

DIODE GP 50V 1A MELF DO-213AB

Diotec Semiconductor

8,040 -
RFQ
SM4001-CT

Datasheet

- DO-213AB, MELF Strip Active Standard 50 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 50 V - - - Surface Mount DO-213AB (MELF) -50°C ~ 175°C
P2500X-CT

P2500X-CT

DIODE AVALANCHE 1.8KV 25A P600

Diotec Semiconductor

9,312 -
RFQ
P2500X-CT

Datasheet

- P600, Axial Strip Active Avalanche 1800 V 25A 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 1.8 V - - - Through Hole P600 -55°C ~ 175°C
1N4005GP-AQ-CT

1N4005GP-AQ-CT

DIODE GEN PURP 600V 1A DO41

Diotec Semiconductor

4,442 -
RFQ
1N4005GP-AQ-CT

Datasheet

- DO-204AC, DO-41, Axial Strip Active Standard 600 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 600 V - - - Through Hole DO-204AC (DO-41) -50°C ~ 175°C
SM5406-CT

SM5406-CT

DIODE GP 600V 3A MELF DO-213AB

Diotec Semiconductor

8,271 -
RFQ
SM5406-CT

Datasheet

- DO-213AB, MELF Strip Active Standard 600 V 3A 1.2 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 600 V - - - Surface Mount DO-213AB (MELF) -50°C ~ 175°C
SM4007-CT

SM4007-CT

DIODE GP 1KV 1A MELF DO-213AB

Diotec Semiconductor

2,031 -
RFQ
SM4007-CT

Datasheet

- DO-213AB, MELF Strip Active Standard 1000 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 1 V - - - Surface Mount DO-213AB (MELF) -50°C ~ 175°C
BY550-50-CT

BY550-50-CT

DIODE GEN PURP 50V 5A DO201

Diotec Semiconductor

7,342 -
RFQ
BY550-50-CT

Datasheet

- DO-201AA, DO-27, Axial Strip Active Standard 50 V 5A 1 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 50 V - - - Through Hole DO-201 -50°C ~ 175°C
SM4003-CT

SM4003-CT

DIODE GP 200V 1A MELF DO-213AB

Diotec Semiconductor

4,618 -
RFQ
SM4003-CT

Datasheet

- DO-213AB, MELF Strip Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 200 V - - - Surface Mount DO-213AB (MELF) -50°C ~ 175°C
P600G-CT

P600G-CT

DIODE GEN PURP 400V 6A P600

Diotec Semiconductor

7,066 -
RFQ
P600G-CT

Datasheet

- P600, Axial Strip Active Standard 400 V 6A 1.1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 400 V - - - Through Hole P600 -50°C ~ 150°C
SM4002-CT

SM4002-CT

DIODE GP 100V 1A MELF DO-213AB

Diotec Semiconductor

3,475 -
RFQ
SM4002-CT

Datasheet

- DO-213AB, MELF Strip Active Standard 100 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 100 V - - - Surface Mount DO-213AB (MELF) -50°C ~ 175°C
GL34B-CT

GL34B-CT

DIODE GP 100V 500MA DO213AA

Diotec Semiconductor

2,178 -
RFQ
GL34B-CT

Datasheet

- DO-213AA Strip Active Standard 100 V 500mA 1.2 V @ 500 mA Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 100 V - - - Surface Mount DO-213AA (MINIMELF) -50°C ~ 175°C
P600B-CT

P600B-CT

DIODE GEN PURP 100V 6A P600

Diotec Semiconductor

6,465 -
RFQ
P600B-CT

Datasheet

- P600, Axial Strip Active Standard 100 V 6A 1.1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 100 V - - - Through Hole P600 -50°C ~ 175°C
BY550-200-CT

BY550-200-CT

DIODE GEN PURP 200V 5A DO201

Diotec Semiconductor

7,792 -
RFQ
BY550-200-CT

Datasheet

- DO-201AA, DO-27, Axial Strip Active Standard 200 V 5A 1 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 200 V - - - Through Hole DO-201 -50°C ~ 175°C
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