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0755-82798135Single Diodes
Single Diodes
TomatoElec supplies single diodes for industrial, automotive, communication, power and general electronics applications. Our sourcing support covers commonly used single diode products for rectification, switching, signal control and protection circuit designs.
We support flexible RFQ service for single diode sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.
With access to multiple supply channels, TomatoElec aims to provide customers with reliable single diode sourcing support, responsive quotation and global delivery service.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UF1504S-BDIODE GEN PURP 400V 1.5A DO41 |
9,876 | - |
|
Datasheet |
- | DO-204AL, DO-41, Axial | Bulk | Obsolete | Standard | 400 V | 1.5A | 1.3 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | 35pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
|
UF1505S-BDIODE GEN PURP 600V 1.5A DO41 |
4,392 | - |
|
Datasheet |
- | DO-204AL, DO-41, Axial | Bulk | Obsolete | Standard | 600 V | 1.5A | 1.7 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 600 V | 20pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
|
UF1506S-BDIODE GEN PURP 800V 1.5A DO41 |
6,330 | - |
|
Datasheet |
- | DO-204AL, DO-41, Axial | Bulk | Obsolete | Standard | 800 V | 1.5A | 1.7 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 800 V | 20pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
|
|
NXPLQSC10650QDIODE SIL CARB 650V 10A TO220AC |
8,476 | - |
|
Datasheet |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.85 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 250pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
|
NXPSC04650QDIODE SIL CARB 650V 4A TO220AC |
5,389 | - |
|
Datasheet |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 170 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
|
NXPSC06650QDIODE SIL CARB 650V 6A TO220AC |
7,517 | - |
|
Datasheet |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
|
NXPSC08650QDIODE SIL CARB 650V 8A TO220AC |
3,421 | - |
|
Datasheet |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
IDH10G65C5ZXKSA2DIODE SCHOTTKY 650V 10A TO220-2 |
8,552 | - |
|
Datasheet |
* | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IDH10G65C5ZXKSA1DIODE SIL CARB 650V 10A TO220-2 |
6,500 | - |
|
Datasheet |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
|
IDT04S60CHKSA1DIODE SCHOTTKY 600V TO220-2 |
4,843 | - |
|
Datasheet |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IDT16S60CHKSA1DIODE SCHOTTKY 600V TO220-2 |
2,715 | - |
|
Datasheet |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RM1200E-TPDIODE GP 1.2KV 500MA DO214AC |
5,048 | - |
|
Datasheet |
- | DO-214AC, SMA | Tape & Reel (TR) | Obsolete | Standard | 1200 V | 500mA | 2 V @ 500 mA | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1200 V | 30pF @ 4V, 1MHz | - | - | Surface Mount | DO-214AC (SMAE) | -55°C ~ 150°C |
|
RM1500E-TPDIODE GP 1.5KV 500MA DO214AC |
7,093 | - |
|
Datasheet |
- | DO-214AC, SMA | Tape & Reel (TR) | Obsolete | Standard | 1500 V | 500mA | 2 V @ 500 mA | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1500 V | 30pF @ 4V, 1MHz | - | - | Surface Mount | DO-214AC (SMAE) | -55°C ~ 150°C |
|
RM1800E-TPDIODE GP 1.8KV 500MA DO214AC |
2,322 | - |
|
Datasheet |
- | DO-214AC, SMA | Tape & Reel (TR) | Obsolete | Standard | 1800 V | 500mA | 2 V @ 500 mA | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1800 V | 30pF @ 4V, 1MHz | - | - | Surface Mount | DO-214AC (SMAE) | -55°C ~ 150°C |
|
RURD420S9A_TDIODE GEN PURP 200V 4A TO252AA |
4,332 | - |
|
Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | Avalanche | 200 V | 4A | 1 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 100 µA @ 200 V | - | - | - | Surface Mount | TO-252AA | -65°C ~ 175°C |
|
CSICD10-1200 TR13DIODE SIL CARBIDE 1.2KV 10A DPAK |
4,696 | - |
|
Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 1200 V | 500pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
1SS388(TL3,F,D)DIODE SCHOTTKY 45V 100MA ESC |
8,483 | - |
|
Datasheet |
- | SC-79, SOD-523 | Tape & Reel (TR) | Obsolete | Schottky | 45 V | 100mA | 600 mV @ 50 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 µA @ 10 V | 18pF @ 0V, 1MHz | - | - | Surface Mount | ESC | -40°C ~ 100°C |
|
NGTD15R65F2WPDIODE GEN PURP 650V DIE |
2,327 | - |
|
Datasheet |
- | Die | Bulk | Active | Standard | 650 V | - | 2.9 V @ 25 A | - | - | 1 µA @ 650 V | - | - | - | Surface Mount | Die | 175°C (Max) |
|
NGTD5R65F2WPDIODE GEN PURP 650V DIE |
8,187 | - |
|
Datasheet |
- | Die | Bulk | Active | Standard | 650 V | - | 1.3 V @ 20 A | - | - | 1 µA @ 650 V | - | - | - | Surface Mount | Die | 175°C (Max) |
|
NGTD8R65F2WPDIODE GEN PURP 650V DIE |
7,953 | - |
|
Datasheet |
- | Die | Bulk | Active | Standard | 650 V | - | 2.8 V @ 30 A | - | - | 1 µA @ 650 V | - | - | - | Surface Mount | Die | 175°C (Max) |
