Single Diodes

Manufacturer Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Single Diodes

TomatoElec supplies single diodes for industrial, automotive, communication, power and general electronics applications. Our sourcing support covers commonly used single diode products for rectification, switching, signal control and protection circuit designs.

We support flexible RFQ service for single diode sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

With access to multiple supply channels, TomatoElec aims to provide customers with reliable single diode sourcing support, responsive quotation and global delivery service.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N6631US/TR

1N6631US/TR

DIODE GEN PURP 1.1KV 1.4A A-MELF

Microchip Technology

8,807 -
RFQ

-

- SQ-MELF, A Tape & Reel (TR) Active Standard 1100 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1100 V 40pF @ 10V, 1MHz - - Surface Mount A-MELF -65°C ~ 150°C
1N6631U/TR

1N6631U/TR

DIODE GEN PURP 1KV 1.4A E-MELF

Microchip Technology

5,767 -
RFQ

-

- SQ-MELF, B Tape & Reel (TR) Active Standard 1000 V 1.4A 1.6 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1000 V - - - Surface Mount E-MELF -65°C ~ 150°C
JANTX1N3646

JANTX1N3646

DIODE GP 1.75KV 250MA S AXIAL

Microchip Technology

8,411 -
RFQ
JANTX1N3646

Datasheet

- S, Axial Bulk Active Standard 1750 V 250mA 5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1750 V - Military MIL-PRF-19500/279 Through Hole S, Axial -65°C ~ 175°C
GB25MPS17-247

GB25MPS17-247

DIODE SIL CARB 1.7KV 52A TO247-2

GeneSiC Semiconductor

6,756 -
RFQ
GB25MPS17-247

Datasheet

SiC Schottky MPS™ TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1700 V 52A 1.8 V @ 25 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1700 V 2350pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
1N5832R

1N5832R

DIODE SCHOTTKY REV 20V 40A DO5

GeneSiC Semiconductor

6,546 -
RFQ
1N5832R

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Schottky, Reverse Polarity 20 V 40A 520 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 20 mA @ 10 V - - - Chassis, Stud Mount DO-5 -65°C ~ 150°C
1N5833R

1N5833R

DIODE SCHOTTKY REV 30V 40A DO5

GeneSiC Semiconductor

2,466 -
RFQ
1N5833R

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Schottky, Reverse Polarity 30 V 40A 550 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 20 mA @ 10 V - - - Chassis, Stud Mount DO-5 -65°C ~ 150°C
1N5834R

1N5834R

DIODE SCHOTTKY REV 40V 40A DO5

GeneSiC Semiconductor

6,689 -
RFQ
1N5834R

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Schottky, Reverse Polarity 40 V 40A 590 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 20 mA @ 10 V - - - Chassis, Stud Mount DO-5 -65°C ~ 150°C
HS24515E3

HS24515E3

DIODE SCHOTTKY 15V 240A HALF-PAK

Microsemi Corporation

8,047 -
RFQ
HS24515E3

Datasheet

- HALF-PAK Tube Obsolete Schottky 15 V 240A 370 mV @ 240 A Fast Recovery =< 500ns, > 200mA (Io) - 150 mA @ 15 V 21700pF @ 5V, 1MHz - - Chassis Mount HALF-PAK -
JANTXV1N6620US

JANTXV1N6620US

DIODE GEN PURP 220V 1.2A D-5A

Microchip Technology

2,170 -
RFQ
JANTXV1N6620US

Datasheet

- SQ-MELF, A Bulk Active Standard 220 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 220 V - Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JAN1N6076

JAN1N6076

DIODE GEN PURP 50V 1.3A E-PAK

Microchip Technology

8,709 -
RFQ
JAN1N6076

Datasheet

- E, Axial Bulk Active Standard 50 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V - Military MIL-PRF-19500/503 Through Hole E-PAK -65°C ~ 155°C
JAN1N6077

JAN1N6077

DIODE GEN PURP 100V 1.3A E-PAK

Microchip Technology

3,037 -
RFQ
JAN1N6077

Datasheet

- E, Axial Bulk Active Standard 100 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V - Military MIL-PRF-19500/503 Through Hole E-PAK -65°C ~ 155°C
JANTXV1N6620U

JANTXV1N6620U

DIODE GEN PURP 200V 1.2A D-5A

Microsemi Corporation

3,057 -
RFQ

-

- SQ-MELF, A Bulk Active Standard 200 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 200 V - Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
DS75-12B

DS75-12B

DIODE GP 1.2KV 110A DO203AB

IXYS

4,175 -
RFQ
DS75-12B

Datasheet

- DO-203AB, DO-5, Stud Box Obsolete Standard 1200 V 110A 1.17 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 6 mA @ 1200 V - - - Chassis, Stud Mount DO-203AB -40°C ~ 180°C
DSI75-12B

DSI75-12B

DIODE GP 1.2KV 110A DO203AB

IXYS

9,704 -
RFQ
DSI75-12B

Datasheet

- DO-203AB, DO-5, Stud Box Obsolete Standard 1200 V 110A 1.17 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 6 mA @ 1200 V - - - Chassis, Stud Mount DO-203AB -40°C ~ 180°C
JAN1N6628U

JAN1N6628U

DIODE GEN PURP 600V 1.75A D-5B

Microsemi Corporation

9,997 -
RFQ
JAN1N6628U

Datasheet

- SQ-MELF, E Bulk Active Standard 600 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 600 V - Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JAN1N6628US

JAN1N6628US

DIODE GEN PURP 660V 1.75A D-5B

Microchip Technology

2,873 -
RFQ

-

- SQ-MELF, E Bulk Active Standard 660 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 660 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JAN1N6630U

JAN1N6630U

DIODE GEN PURP 900V 1.4A D-5B

Microsemi Corporation

6,375 -
RFQ

-

- SQ-MELF, E Bulk Active Standard 900 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 900 V - Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JAN1N6630US

JAN1N6630US

DIODE GEN PURP 900V 1.4A D-5B

Microchip Technology

5,257 -
RFQ
JAN1N6630US

Datasheet

- SQ-MELF, E Bulk Active Standard 900 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 900 V - Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JAN1N6631U

JAN1N6631U

DIODE GEN PURP 1KV 1.4A D-5B

Microsemi Corporation

5,161 -
RFQ
JAN1N6631U

Datasheet

- SQ-MELF, E Bulk Active Standard 1000 V 1.4A 1.6 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1000 V - Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JAN1N6631US

JAN1N6631US

DIODE GEN PURP 1.1KV 1.4A D-5B

Microchip Technology

8,033 -
RFQ

-

- SQ-MELF, E Bulk Active Standard 1100 V 1.4A 1.6 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1100 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
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