Single Diodes

Manufacturer Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Single Diodes

TomatoElec supplies single diodes for industrial, automotive, communication, power and general electronics applications. Our sourcing support covers commonly used single diode products for rectification, switching, signal control and protection circuit designs.

We support flexible RFQ service for single diode sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

With access to multiple supply channels, TomatoElec aims to provide customers with reliable single diode sourcing support, responsive quotation and global delivery service.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
FR40JR05

FR40JR05

DIODE GEN PURP REV 600V 40A DO5

GeneSiC Semiconductor

8,289 -
RFQ
FR40JR05

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 600 V 40A 1.4 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-5 -40°C ~ 125°C
1N6622

1N6622

DIODE GEN PURP 600V 1.2A A-PAK

Microchip Technology

3,196 -
RFQ
1N6622

Datasheet

- A, Axial Bulk Active Standard 600 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 600 V - - - Through Hole A, Axial -65°C ~ 150°C
1N6621

1N6621

DIODE GEN PURP 440V 1.2A AXIAL

Microchip Technology

5,112 -
RFQ
1N6621

Datasheet

- A, Axial Bulk Active Standard 440 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 440 V 10pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 150°C
1N4949SM/TR

1N4949SM/TR

UFR,FRR

Microchip Technology

5,973 -
RFQ

-

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
LSIC2SD120D15

LSIC2SD120D15

DIODE SIL CARB 1.2KV 44A TO263L

Littelfuse Inc.

4,530 -
RFQ
LSIC2SD120D15

Datasheet

Gen2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 1200 V 44A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 920pF @ 1V, 1MHz - - Surface Mount TO-263-2L -55°C ~ 175°C
LSIC2SD120A20A

LSIC2SD120A20A

DIODE SIC 1.2KV 54.5A TO220L

Littelfuse Inc.

2,730 -
RFQ
LSIC2SD120A20A

Datasheet

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 54.5A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 1142pF @ 1V, 1MHz - - Through Hole TO-220-2L -55°C ~ 175°C
1N6622E3

1N6622E3

DIODE A AXIAL

Microchip Technology

6,063 -
RFQ

-

- A, Axial Bulk Active - - - 1.6 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - - - Through Hole A, Axial -
1N6622/TR

1N6622/TR

DIODE GEN PURP 600V 1.2A A-PAK

Microchip Technology

4,123 -
RFQ
1N6622/TR

Datasheet

- A, Axial Tape & Reel (TR) Active Standard 600 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 600 V - - - Through Hole A, Axial -65°C ~ 150°C
1N6621/TR

1N6621/TR

DIODE GEN PURP 440V 1.2A

Microchip Technology

8,428 -
RFQ
1N6621/TR

Datasheet

- A, Axial Tape & Reel (TR) Active Standard 440 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 440 V 10pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 150°C
SIDC59D170HX1SA2

SIDC59D170HX1SA2

DIODE GP 1.7KV 100A WAFER

Infineon Technologies

3,772 -
RFQ
SIDC59D170HX1SA2

Datasheet

- Die Bulk Discontinued at Digi-Key Standard 1700 V 100A 1.8 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 1700 V - - - Surface Mount Sawn on foil -55°C ~ 150°C
JANTXV1N5616

JANTXV1N5616

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

7,575 -
RFQ
JANTXV1N5616

Datasheet

- A, Axial Bulk Active Standard 400 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 400 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JAN1N6631/TR

JAN1N6631/TR

DIODE GEN PURP 1.1KV 1.4A

Microchip Technology

8,559 -
RFQ

-

- E, Axial Tape & Reel (TR) Active Standard 1100 V 1.4A 1.6 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 2 µA @ 1100 V - Military MIL-PRF-19500/590 Through Hole - -65°C ~ 175°C
JAN1N6628/TR

JAN1N6628/TR

DIODE GEN PURP 660V 1.75A

Microchip Technology

2,073 -
RFQ

-

- E, Axial Tape & Reel (TR) Active Standard 660 V 1.75A 1.35 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 600 V - Military MIL-PRF-19500/590 Through Hole - -65°C ~ 175°C
JAN1N6630/TR

JAN1N6630/TR

DIODE GEN PURP 900V 1.4A

Microchip Technology

6,688 -
RFQ

-

- E, Axial Tape & Reel (TR) Active Standard 900 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 900 V - Military MIL-PRF-19500/590 Through Hole - -65°C ~ 150°C
JANTXV1N5616/TR

JANTXV1N5616/TR

DIODE GEN PURP 400V 1A

Microchip Technology

9,219 -
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 400 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 400 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
1N6547

1N6547

DIODE RECT ULT FAST REC A-PKG

Microchip Technology

8,033 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - -
1N5829

1N5829

DIODE SCHOTTKY 20V 25A DO4

GeneSiC Semiconductor

2,508 -
RFQ
1N5829

Datasheet

- DO-203AA, DO-4, Stud Bulk Active Schottky 20 V 25A 580 mV @ 25 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 20 V - - - Chassis, Stud Mount DO-4 -55°C ~ 150°C
1N5830

1N5830

DIODE SCHOTTKY 25V 25A DO4

GeneSiC Semiconductor

2,442 -
RFQ
1N5830

Datasheet

- DO-203AA, DO-4, Stud Bulk Active Schottky 25 V 25A 580 mV @ 25 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 20 V - - - Chassis, Stud Mount DO-4 -55°C ~ 150°C
1N5831

1N5831

DIODE SCHOTTKY 35V 25A DO4

GeneSiC Semiconductor

2,684 -
RFQ
1N5831

Datasheet

- DO-203AA, DO-4, Stud Bulk Active Schottky 35 V 25A 580 mV @ 25 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 20 V - - - Chassis, Stud Mount DO-4 -55°C ~ 150°C
1N6095

1N6095

DIODE SCHOTTKY 30V 25A DO4

GeneSiC Semiconductor

4,098 -
RFQ
1N6095

Datasheet

- DO-203AA, DO-4, Stud Bulk Active Schottky 30 V 25A 580 mV @ 25 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 20 V - - - Chassis, Stud Mount DO-4 -55°C ~ 150°C
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