Single Diodes

Manufacturer Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Single Diodes

TomatoElec supplies single diodes for industrial, automotive, communication, power and general electronics applications. Our sourcing support covers commonly used single diode products for rectification, switching, signal control and protection circuit designs.

We support flexible RFQ service for single diode sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

With access to multiple supply channels, TomatoElec aims to provide customers with reliable single diode sourcing support, responsive quotation and global delivery service.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JANTXV1N6643

JANTXV1N6643

DIODE GEN PURP 75V 300MA D-5B

Microchip Technology

6,877 -
RFQ
JANTXV1N6643

Datasheet

- D, Axial Bulk Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Through Hole D-5D -65°C ~ 175°C
JANTXV1N6640

JANTXV1N6640

DIODE GEN PURP 50V 300MA DO35

Microchip Technology

3,698 -
RFQ

-

- DO-204AH, DO-35, Axial Bulk Active Standard 50 V 300mA 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - Military MIL-PRF-19500/609 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JAN1N5550US

JAN1N5550US

DIODE GEN PURP 200V 3A D-5B

Microchip Technology

3,859 -
RFQ
JAN1N5550US

Datasheet

- SQ-MELF, E Bulk Discontinued at Digi-Key Standard 200 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
1N6628/TR

1N6628/TR

DIODE GEN PURP 600V 1.75A A-PAK

Microchip Technology

6,200 -
RFQ
1N6628/TR

Datasheet

- A, Axial Tape & Reel (TR) Active Standard 600 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 2 µA @ 600 V - - - Through Hole A, Axial -65°C ~ 150°C
JANTXV1N5806US/TR

JANTXV1N5806US/TR

DIODE GEN PURP 150V 1A D-5A

Microchip Technology

9,425 -
RFQ
JANTXV1N5806US/TR

Datasheet

- SQ-MELF, A Tape & Reel (TR) Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
JAN1N3595AUR-1

JAN1N3595AUR-1

DIODE GP 125V 150MA DO213AA

Microchip Technology

2,527 -
RFQ
JAN1N3595AUR-1

Datasheet

- DO-213AA Bulk Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - Military MIL-PRF-19500/241 Surface Mount DO-213AA -65°C ~ 175°C
GKN71/14

GKN71/14

DIODE GEN PURP 1.4KV 95A DO5

GeneSiC Semiconductor

6,360 -
RFQ

-

- DO-203AB, DO-5, Stud Bulk Active Standard 1400 V 95A 1.5 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 1400 V - - - Chassis, Stud Mount DO-5 -40°C ~ 180°C
VS-71HF100

VS-71HF100

DIODE GEN PURP 1KV 70A DO203AB

Vishay General Semiconductor - Diodes Division

6,220 -
RFQ
VS-71HF100

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard 1000 V 70A 1.35 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 1000 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
JAN1N5802US

JAN1N5802US

DIODE GEN PURP 50V 2.5A D-5A

Microchip Technology

2,019 -
RFQ
JAN1N5802US

Datasheet

- SQ-MELF, A Bulk Active Standard 50 V 2.5A 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
SIDC53D120H8X1SA1

SIDC53D120H8X1SA1

DIODE GP 1.2KV 100A WAFER

Infineon Technologies

5,436 -
RFQ
SIDC53D120H8X1SA1

Datasheet

- Die Bulk Discontinued at Digi-Key Standard 1200 V 100A 1.97 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 1200 V - - - Surface Mount Sawn on foil -40°C ~ 175°C
VS-86HFR60

VS-86HFR60

DIODE GP REV 600V 85A DO203AB

Vishay General Semiconductor - Diodes Division

3,122 -
RFQ
VS-86HFR60

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 600 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 600 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
VS-72HFR140

VS-72HFR140

DIODE GP REV 1.4KV 70A DO203AB

Vishay General Semiconductor - Diodes Division

5,304 -
RFQ
VS-72HFR140

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1400 V 70A 1.46 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 150°C
JANTX1N5188

JANTX1N5188

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

7,156 -
RFQ
JANTX1N5188

Datasheet

- B, Axial Bulk Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 2 µA @ 400 V - Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5621

JANTXV1N5621

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology

9,867 -
RFQ
JANTXV1N5621

Datasheet

- A, Axial Bulk Active Standard 800 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 500 nA @ 800 V 20pF @ 12V, 1MHz Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
JANTX1N5417US

JANTX1N5417US

DIODE GEN PURP 200V 3A D-5B

Microchip Technology

9,866 -
RFQ
JANTX1N5417US

Datasheet

- SQ-MELF, E Bulk Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
1N5808

1N5808

DIODE RECT ULT FAST REC B-PKG

Microchip Technology

9,730 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - -
1N5810

1N5810

DIODE GEN PURP 6A AXIAL

Microchip Technology

9,053 -
RFQ

-

- Axial Bulk Active Standard - 6A 875 mV @ 4 A Standard Recovery >500ns, > 200mA (Io) - - - - - Through Hole Axial -
GKN71/16

GKN71/16

DIODE GEN PURP 1.6KV 95A DO5

GeneSiC Semiconductor

6,077 -
RFQ

-

- DO-203AB, DO-5, Stud Bulk Active Standard 1600 V 95A 1.5 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 1600 V - - - Chassis, Stud Mount DO-5 -40°C ~ 180°C
JANTXV1N5621/TR

JANTXV1N5621/TR

DIODE GEN PURP 800V 1A

Microchip Technology

9,227 -
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 800 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 500 nA @ 800 V 20pF @ 12V, 1MHz Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
JANTXV1N6640/TR

JANTXV1N6640/TR

DIODE GEN PURP 50V 300MA DO35

Microchip Technology

9,903 -
RFQ

-

- DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 50 V 300mA 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - Military MIL-PRF-19500/609 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
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