Single Diodes

Manufacturer Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Single Diodes

TomatoElec supplies single diodes for industrial, automotive, communication, power and general electronics applications. Our sourcing support covers commonly used single diode products for rectification, switching, signal control and protection circuit designs.

We support flexible RFQ service for single diode sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

With access to multiple supply channels, TomatoElec aims to provide customers with reliable single diode sourcing support, responsive quotation and global delivery service.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JAN1N5420/TR

JAN1N5420/TR

DIODE GEN PURP 600V 3A B AXIAL

Microchip Technology

6,191 -
RFQ
JAN1N5420/TR

Datasheet

- B, Axial Tape & Reel (TR) Active Standard 600 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 1 µA @ 600 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
WBST080SCM120CGALW

WBST080SCM120CGALW

WBST080SCM120CGAL/NAU000/NO MARK

WeEn Semiconductors

4,318 -
RFQ

-

- - Bulk Active - - - - - - - - - - - - -
LSIC2SD065C16A

LSIC2SD065C16A

DIODE SIL CARB 650V 38A TO252

Littelfuse Inc.

9,017 -
RFQ
LSIC2SD065C16A

Datasheet

Gen2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 38A 1.8 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 730pF @ 1V, 1MHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
80EPF12

80EPF12

DIODE GEN PURP 1.2KV 80A TO247AC

Vishay General Semiconductor - Diodes Division

6,130 -
RFQ
80EPF12

Datasheet

- TO-247-3 Tube Obsolete Standard 1200 V 80A 1.35 V @ 80 A Fast Recovery =< 500ns, > 200mA (Io) 480 ns 100 µA @ 1200 V - - - Through Hole TO-247AC -65°C ~ 175°C
JANTXV1N5417/TR

JANTXV1N5417/TR

DIODE GEN PURP 200V 3A

Microchip Technology

9,598 -
RFQ
JANTXV1N5417/TR

Datasheet

- B, Axial Tape & Reel (TR) Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
121NQ040

121NQ040

DIODE SCHOTTKY 40V 120A D-67

Vishay General Semiconductor - Diodes Division

3,604 -
RFQ
121NQ040

Datasheet

- D-67 HALF-PAK Bulk Obsolete Schottky 40 V 120A 650 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 40 V 5200pF @ 5V, 1MHz - - Chassis Mount D-67 HALF-PAK -
AIDW40S65C5XKSA1

AIDW40S65C5XKSA1

DIODE SIL CARB 650V 40A TO247-3

Infineon Technologies

3,227 -
RFQ
AIDW40S65C5XKSA1

Datasheet

CoolSiC™ TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 40A 1.7 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 650 V 1138pF @ 1V, 1MHz Automotive AEC-Q100/101 Through Hole PG-TO247-3-41 -40°C ~ 175°C
CDLL5819E3/TR

CDLL5819E3/TR

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology

3,322 -
RFQ
CDLL5819E3/TR

Datasheet

- DO-213AB, MELF (Glass) Tape & Reel (TR) Active Schottky 45 V 1A 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz - - Surface Mount DO-213AB -65°C ~ 125°C
JANTX1N5419/TR

JANTX1N5419/TR

DIODE GEN PURP 500V 3A

Microchip Technology

4,929 -
RFQ
JANTX1N5419/TR

Datasheet

- B, Axial Tape & Reel (TR) Active Standard 500 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
UT252

UT252

DIODE GEN PURP 200V 1A A AXIAL

Microchip Technology

4,679 -
RFQ

-

- A, Axial Bulk Active Standard 200 V 1A 1 V @ 750 mA Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 200 V - - - Through Hole A, Axial -65°C ~ 175°C
JAN1N5417US

JAN1N5417US

DIODE GEN PURP 200V 3A B SQ-MELF

Microchip Technology

6,610 -
RFQ
JAN1N5417US

Datasheet

- SQ-MELF, B Bulk Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - Military MIL-PRF-19500/411 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTXV1N4248/TR

JANTXV1N4248/TR

DIODE GEN PURP 800V 1A

Microchip Technology

9,011 -
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 800 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
GB10SLT12-220

GB10SLT12-220

DIODE SIL CARB 1.2KV 10A TO220-2

GeneSiC Semiconductor

7,227 -
RFQ

-

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 520pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
CN5179 BK TIN/LEAD

CN5179 BK TIN/LEAD

DIODE GEN PURP 20V DO35

Central Semiconductor Corp

7,101 -
RFQ

-

- DO-204AH, DO-35, Axial Box Obsolete Standard 20 V - 3.7 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 10 µA @ 20 V - - - Through Hole DO-35 -65°C ~ 150°C
JANTX1N5614US

JANTX1N5614US

DIODE GEN PURP 200V 1A D-5A

Microchip Technology

3,826 -
RFQ
JANTX1N5614US

Datasheet

- SQ-MELF, A Bulk Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - Military MIL-PRF-19500/437 Surface Mount D-5A -65°C ~ 200°C
SIC20120B-BP

SIC20120B-BP

Interface

Micro Commercial Co

3,825 -
RFQ
SIC20120B-BP

Datasheet

- TO-220-2 Bulk Last Time Buy SiC (Silicon Carbide) Schottky 1200 V 20A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V - - - Through Hole TO-220AC -55°C ~ 175°C
VS-86HF80

VS-86HF80

DIODE GEN PURP 800V 85A DO203AB

Vishay General Semiconductor - Diodes Division

5,650 -
RFQ
VS-86HF80

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard 800 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 800 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
JANTXV1N5619

JANTXV1N5619

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

6,776 -
RFQ
JANTXV1N5619

Datasheet

- A, Axial Bulk Active Standard 600 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 500 nA @ 600 V 25pF @ 12V, 1MHz Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
1N5188US/TR

1N5188US/TR

DIODE GEN PURP 400V 3A

Microchip Technology

6,932 -
RFQ

-

- B, Axial Tape & Reel (TR) Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 2 µA @ 400 V - - - Through Hole B, Axial -65°C ~ 175°C
UT3010/TR

UT3010/TR

DIODE GEN PURP 100V 3A B

Microchip Technology

4,330 -
RFQ

-

- Axial Tape & Reel (TR) Active Standard 100 V 3A 1 V @ 2 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 100 V - - - Through Hole B -195°C ~ 175°C
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