Single Diodes

Manufacturer Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction

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Single Diodes

TomatoElec supplies single diodes for industrial, automotive, communication, power and general electronics applications. Our sourcing support covers commonly used single diode products for rectification, switching, signal control and protection circuit designs.

We support flexible RFQ service for single diode sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

With access to multiple supply channels, TomatoElec aims to provide customers with reliable single diode sourcing support, responsive quotation and global delivery service.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N3595UR-1/TR

1N3595UR-1/TR

DIODE GP 125V 150MA DO213AA

Microchip Technology

8,196 -
RFQ
1N3595UR-1/TR

Datasheet

- DO-213AA Tape & Reel (TR) Active Standard 125 V 150mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - - - Surface Mount DO-213AA -65°C ~ 175°C
JANTX1N5550/TR

JANTX1N5550/TR

DIODE GEN PURP 200V 5A

Microchip Technology

9,080 -
RFQ
JANTX1N5550/TR

Datasheet

- B, Axial Tape & Reel (TR) Active Standard 200 V 5A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
DSA9-18F

DSA9-18F

DIODE AVAL 1.8KV 11A DO203AA

IXYS

2,809 -
RFQ

-

- DO-203AA, DO-4, Stud Box Obsolete Avalanche 1800 V 11A 1.4 V @ 36 A Standard Recovery >500ns, > 200mA (Io) - 3 mA @ 1800 V - - - Chassis, Stud Mount DO-203AA -40°C ~ 180°C
CDLL5822/TR

CDLL5822/TR

SMALL-SIGNAL SCHOTTKY

Microchip Technology

8,808 -
RFQ

-

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
CDLL5820/TR

CDLL5820/TR

SMALL-SIGNAL SCHOTTKY

Microchip Technology

9,611 -
RFQ

-

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
CDLL5821/TR

CDLL5821/TR

SMALL-SIGNAL SCHOTTKY

Microchip Technology

3,634 -
RFQ

-

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
SCS112AGC

SCS112AGC

DIODE SIL CARB 600V 12A TO220AC

Rohm Semiconductor

3,335 -
RFQ
SCS112AGC

Datasheet

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 240 µA @ 600 V 516pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
FR12KR05

FR12KR05

DIODE GEN PURP REV 800V 12A DO4

GeneSiC Semiconductor

3,773 -
RFQ
FR12KR05

Datasheet

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 800 V 12A 800 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
FR12MR05

FR12MR05

DIODE GEN PURP REV 1KV 12A DO4

GeneSiC Semiconductor

6,860 -
RFQ
FR12MR05

Datasheet

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 1000 V 12A 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
VS-87HF40

VS-87HF40

DIODE GEN PURP 400V 85A DO203AB

Vishay General Semiconductor - Diodes Division

4,981 -
RFQ
VS-87HF40

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard 400 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
VS-87HFR40

VS-87HFR40

DIODE GP REV 400V 85A DO203AB

Vishay General Semiconductor - Diodes Division

2,325 -
RFQ
VS-87HFR40

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 400 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
JAN1N3595UR-1

JAN1N3595UR-1

DIODE GP 125V 150MA DO213AA

Microchip Technology

2,685 -
RFQ
JAN1N3595UR-1

Datasheet

- DO-213AA Bulk Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - Military MIL-PRF-19500/241 Surface Mount DO-213AA -65°C ~ 175°C
JAN1N6639

JAN1N6639

DIODE GEN PURP 75V 300MA D-5D

Microchip Technology

4,449 -
RFQ
JAN1N6639

Datasheet

- D, Axial Bulk Active Standard 75 V 300mA 1.2 V @ 300 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 75 V - Military MIL-PRF-19500/609 Through Hole D-5D -65°C ~ 175°C
JAN1N6640

JAN1N6640

DIODE GEN PURP 50V 300MA AXIAL

Microchip Technology

4,190 -
RFQ
JAN1N6640

Datasheet

- D, Axial Bulk Active Standard 50 V 300mA 1 V @ 300 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - Military MIL-PRF-19500/609 Through Hole D-5D -65°C ~ 175°C
JAN1N6641

JAN1N6641

DIODE GEN PURP 50V 300MA AXIAL

Microchip Technology

5,603 -
RFQ
JAN1N6641

Datasheet

- D, Axial Bulk Active Standard 50 V 300mA 1.1 V @ 300 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 100 nA @ 50 V - Military MIL-PRF-19500/609 Through Hole D-5D -65°C ~ 175°C
JAN1N6642

JAN1N6642

DIODE GEN PURP 75V 300MA AXIAL

Microchip Technology

5,447 -
RFQ
JAN1N6642

Datasheet

- D, Axial Bulk Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Through Hole D-5D -65°C ~ 175°C
JAN1N5415/TR

JAN1N5415/TR

DIODE GEN PURP 50V 3A

Microchip Technology

8,424 -
RFQ
JAN1N5415/TR

Datasheet

- B, Axial Tape & Reel (TR) Active Standard 50 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 50 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JAN1N5416/TR

JAN1N5416/TR

DIODE GEN PURP 100V 3A

Microchip Technology

7,783 -
RFQ
JAN1N5416/TR

Datasheet

- B, Axial Tape & Reel (TR) Active Standard 100 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JAN1N5807/TR

JAN1N5807/TR

DIODE GEN PURP 50V 6A

Microchip Technology

3,641 -
RFQ
JAN1N5807/TR

Datasheet

- B, Axial Tape & Reel (TR) Active Standard 50 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JAN1N5811/TR

JAN1N5811/TR

DIODE GEN PURP 150V 6A

Microchip Technology

8,857 -
RFQ
JAN1N5811/TR

Datasheet

- B, Axial Tape & Reel (TR) Active Standard 150 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
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