Single IGBTs

Manufacturer Series Package/Case Packaging Product Status IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Current - Collector Pulsed (Icm) Vce(on) (Max) @ Vge, Ic Power - Max Switching Energy Input Type Gate Charge Td (on/off) @ 25°C Test Condition Reverse Recovery Time (trr) Operating Temperature Grade Qualification Mounting Type Supplier Device Package

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Single IGBTs

TomatoElec supplies single IGBTs for industrial, automotive, power control, motor drive and general electronics applications. Our sourcing support covers single insulated gate bipolar transistor products used in switching, power conversion and control circuit designs.

We support flexible RFQ service for single IGBT sourcing and help customers improve procurement efficiency for regular demand, urgent requirements and selected hard-to-find parts.

With access to multiple supply channels, TomatoElec aims to provide customers with reliable single IGBT sourcing support, responsive quotation and global delivery service.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Current - Collector Pulsed (Icm) Vce(on) (Max) @ Vge, Ic Power - Max Switching Energy Input Type Gate Charge Td (on/off) @ 25°C Test Condition Reverse Recovery Time (trr) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
MMIX1X200N60B3H1

MMIX1X200N60B3H1

IGBT 600V 175A 520W SMPD

IXYS

4,522 -
RFQ
MMIX1X200N60B3H1

Datasheet

GenX3™, XPT™ 24-PowerSMD, 21 Leads Tube Active - 600 V 175 A 1000 A 1.7V @ 15V, 100A 520 W 2.85mJ (on), 2.9mJ (off) Standard 315 nC 48ns/160ns 360V, 100A, 1Ohm, 15V 100 ns -55°C ~ 150°C (TJ) - - Surface Mount 24-SMPD
IXGF25N250

IXGF25N250

IGBT 2500V 30A 114W I4-PAK

IXYS

4,390 -
RFQ
IXGF25N250

Datasheet

- i4-Pac™-5 (3 Leads) Tube Active NPT 2500 V 30 A 200 A 5.2V @ 15V, 75A 114 W - Standard 75 nC - - - -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS i4-PAC™
IXBF32N300

IXBF32N300

IGBT 3000V 40A ISOPLUSI4

IXYS

6,382 -
RFQ
IXBF32N300

Datasheet

BIMOSFET™ i4-Pac™-5 (3 Leads) Tube Active - 3000 V 40 A 250 A 3.2V @ 15V, 32A 160 W - Standard 142 nC - - 1.5 µs -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS i4-PAC™
STGHU30M65DF2AG

STGHU30M65DF2AG

AUTOMOTIVE-GRADE TRENCH GATE FIE

STMicroelectronics

8,743 -
RFQ
STGHU30M65DF2AG

Datasheet

M TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active Trench Field Stop 650 V 84 A 120 A 2V @ 15V, 30A 441 W 210µJ (on), 1.147mJ (off) Standard 90 nC 22ns/151ns 400V, 30A, 10Ohm, 15V 223 ns -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount HU3PAK
STGWA35IH135DF2

STGWA35IH135DF2

IGBT TRENCH FS 1.35KV 70A TO247

STMicroelectronics

6,567 -
RFQ
STGWA35IH135DF2

Datasheet

- TO-247-3 Tube Active Trench Field Stop 1350 V 70 A 140 A 2.2V @ 15V, 30A 416 W 1.6mJ (off) Standard 258 nC - 600V, 30A, 10Ohm, 15V - -55°C ~ 175°C (TJ) - - Through Hole TO-247 Long Leads
STGWA50M65DF2AG

STGWA50M65DF2AG

AUTOMOTIVE-GRADE TRENCH GATE FIE

STMicroelectronics

4,609 -
RFQ
STGWA50M65DF2AG

Datasheet

M TO-247-3 Tube Active Trench Field Stop 650 V 119 A 207 A 2V @ 15V, 50A 576 W 1.4mJ (on), 1.8mJ (off) Standard 147 nC 29.8ns/143ns 400V, 50A, 6.8Ohm, 15V 121.6 ns -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247 Long Leads
GT50J341,Q

GT50J341,Q

PB-F IGBT / TRANSISTOR TO-3PN IC

Toshiba Semiconductor and Storage

9,345 -
RFQ
GT50J341,Q

Datasheet

- TO-3P-3, SC-65-3 Tray Active - 600 V 50 A 100 A 2.2V @ 15V, 50A 200 W - Standard - - - - 175°C (TJ) - - Through Hole TO-3P(N)
RGTH60TS65GC11

RGTH60TS65GC11

IGBT TRNCH FIELD 650V 58A TO247N

Rohm Semiconductor

6,897 -
RFQ
RGTH60TS65GC11

Datasheet

- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 58 A 120 A 2.1V @ 15V, 30A 197 W - Standard 58 nC 27ns/105ns 400V, 30A, 10Ohm, 15V - -40°C ~ 175°C (TJ) - - Through Hole TO-247N
FGHL50T65LQDT

FGHL50T65LQDT

IGBT TRENCH FS 650V 80A TO247-3

onsemi

4,449 -
RFQ
FGHL50T65LQDT

Datasheet

- TO-247-3 Tube Active Trench Field Stop 650 V 80 A 200 A 1.35V @ 15V, 50A 341 W 510µJ (on), 880µJ (off) Standard 509 nC 31ns/408ns 400V, 25A, 4.7Ohm, 15V 75 ns -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
FGHL50T65LQDTL4

FGHL50T65LQDTL4

IGBT TRENCH FS 650V 80A TO247-4L

onsemi

7,557 -
RFQ
FGHL50T65LQDTL4

Datasheet

- TO-247-4 Tube Active Trench Field Stop 650 V 80 A 200 A 1.35V @ 15V, 50A 341 W 410µJ (on), 860µJ (off) Standard 509 nC 28ns/424ns 400V, 50A, 4.7Ohm, 15V 75 ns -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
IXYP48N65A5

IXYP48N65A5

650V, 48A, XP Gen5 A5 IGBT in

IXYS

6,438 -
RFQ
IXYP48N65A5

Datasheet

Gen5 XPT™ TO-220-3 Bulk Active Trench Field Stop 650 V 130 A 236 A 1.4V @ 15V, 30A 326 W 400µJ (on), 1.25mJ (off) Standard 100 nC 20ns/205ns 400V, 30A, 5Ohm, 15V - -55°C ~ 175°C (TJ) - - Through Hole TO-220 (IXYP)
IXYP35N65C5

IXYP35N65C5

650V, 35A, XP Gen5 C5 IGBT in TO

IXYS

7,521 -
RFQ
IXYP35N65C5

Datasheet

Gen5 XPT™ TO-220-3 Bulk Active Trench Field Stop 650 V 90 A 190 A 2V @ 15V, 30A 326 W 230µJ (on), 180µJ (off) Standard 96 nC 21ns/122ns 300V, 20A, 5Ohm, 15V - -55°C ~ 175°C (TJ) - - Through Hole TO-220 (IXYP)
GT50JR22(STA1,E,S)

GT50JR22(STA1,E,S)

PB-F IGBT / TRANSISTOR TO-3PN(OS

Toshiba Semiconductor and Storage

8,289 -
RFQ
GT50JR22(STA1,E,S)

Datasheet

- TO-3P-3, SC-65-3 Tube Active - 600 V 50 A 100 A 2.2V @ 15V, 50A 230 W - Standard - - - - 175°C (TJ) - - Through Hole TO-3P(N)
IXYA48N65A5

IXYA48N65A5

650V, 48A, XP Gen5 A5 IGBT in TO

IXYS

8,885 -
RFQ
IXYA48N65A5

Datasheet

Gen5 XPT™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active Trench Field Stop 650 V 130 A 236 A 1.4V @ 15V, 30A 326 W 400µJ (on), 1.25mJ (off) Standard 100 nC 20ns/205ns 400V, 30A, 5Ohm, 15V - -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
MIS80N120NT1YHE3-BP

MIS80N120NT1YHE3-BP

IGBT 1200V 80A STO-220

Micro Commercial Co

9,557 -
RFQ
MIS80N120NT1YHE3-BP

Datasheet

- TO-273AA Bulk Active Trench Field Stop 1200 V 145 A 240 A 2.3V @ 15V, 80A 735 W 7.5mJ (on), 4.6mJ (off) Standard 650 nC 33ns/231ns 600V, 80A, 10Ohm, 15V - -40°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole SUPER-TO-220™ (TO-273AA)
IXGH48N60C3

IXGH48N60C3

IGBT 600V 75A 300W TO247AD

IXYS

1 -
RFQ
IXGH48N60C3

Datasheet

GenX3™ TO-247-3 Tube Obsolete PT 600 V 75 A 250 A 2.5V @ 15V, 30A 300 W 410µJ (on), 230µJ (off) Standard 77 nC 19ns/60ns 400V, 30A, 3Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
GWA40MS120DF4AG

GWA40MS120DF4AG

IGBT TRENCH FS 1200V 80A TO247

STMicroelectronics

3,131 -
RFQ

-

- TO-247-3 Tube Active Trench Field Stop 1200 V 80 A 120 A 2.3V @ 15V, 40A 536 W 1.5mJ (on), 3.3mJ (off) Standard 147 nC 35ns/140ns 600V, 40A, 10Ohm, 15V 465 ns -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247 Long Leads
IXYA60N65A5

IXYA60N65A5

650V, 60A, XP Gen5 A5 IGBT in TO

IXYS

8,983 -
RFQ
IXYA60N65A5

Datasheet

Gen5 XPT™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active Trench Field Stop 650 V 134 A 260 A 1.35V @ 15V, 36A 395 W 600µJ (on), 1.45mJ (off) Standard 128 nC 28ns/230ns 400V, 36A, 5Ohm, 15V - -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IXYA55N65B5

IXYA55N65B5

650V, 55A, XPT Gen5 B5 IGBT in

IXYS

9,524 -
RFQ
IXYA55N65B5

Datasheet

Gen5 XPT™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active Trench Field Stop 650 V 122 A 250 A 1.5V @ 15V, 100A 395 W 550µJ (on), 600µJ (off) Standard 130 nC 20ns/200ns 300V, 25A, 5Ohm, 15V - -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IXYA50N65C5

IXYA50N65C5

650V, 50A, XPT Gen5 C5 IGBT in

IXYS

2,670 -
RFQ
IXYA50N65C5

Datasheet

XPT™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active Trench Field Stop 650 V 110 A 240 A 2V @ 15V, 36A 650 W 360µJ (on), 260µJ (off) Standard 117 nC 25ns/170ns 300V, 25A, 5Ohm, 15V - -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
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