Available 24/7 at
0755-82798135FET, MOSFET Arrays
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NVXK2TR80WDTMOSFET 4N-CH 1200V 20A APM32 |
5,193 | - |
|
Datasheet |
- | 32-PowerDIP Module (1.311", 33.30mm) | Tube | Active | Silicon Carbide (SiC) | 4 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 20A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 82W (Tc) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
|
NVXK2VR80WXT2MOSFET 6N-CH 1200V 31A APM32 |
3,969 | - |
|
Datasheet |
- | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 31A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 208W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
|
NVXK2PR80WXT2MOSFET 4N-CH 1200V 31A APM32 |
2,267 | - |
|
Datasheet |
- | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 31A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 208W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
|
M1P45M12W2-1LAMOSFET 6N-CH 1200V ACEPACK DMT |
5,427 | - |
|
Datasheet |
ECOPACK® | 32-PowerDIP Module (1.264", 32.10mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 30A (Tc) | 60.5mOhm @ 20A, 18V | 5V @ 1mA | 100nC @ 18V | 2086pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Through Hole | ACEPACK DMT-32 |
|
NVXK2VR80WDT2MOSFET 6N-CH 1200V 20A APM32 |
2,337 | - |
|
Datasheet |
- | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 20A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 82W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
|
M1F80M12W2-1LAAUTOMOTIVE-GRADE ACEPACK DMT-32 |
9,403 | - |
|
Datasheet |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NXH040F120MNF1PGMOSFET 4N-CH 1200V 30A 22PIM |
6,006 | - |
|
Datasheet |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel | - | 1200V (1.2kV) | 30A (Tc) | 56mOhm @ 25A, 20V | 4.3V @ 10mA | 122.1nC @ 20V | 1505pF @ 800V | 74W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 22-PIM (33.8x42.5) |
|
MSCSM120AM50T1AGMOSFET 2N-CH 1200V 55A |
7,822 | - |
|
Datasheet |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 55A (Tc) | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137nC @ 20V | 1990pF @ 1000V | 245W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
NXH010P90MNF1PGMOSFET 2N-CH 900V 154A |
3,091 | - |
|
Datasheet |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | - | 900V | 154A (Tc) | 14mOhm @ 100A, 15V | 4.3V @ 40mA | 546.4nC @ 15V | 7007pF @ 450V | 328W (Tj) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
|
NXH010P120MNF1PGMOSFET 2N-CH 1200V 114A |
5,990 | - |
|
Datasheet |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | - | 1200V (1.2kV) | 114A (Tc) | 14mOhm @ 100A, 20V | 4.3V @ 40mA | 454nC @ 20V | 4707pF @ 800V | 250W (Tj) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
|
NXH020P120MNF1PGMOSFET 2N-CH 1200V 51A |
2,676 | - |
|
Datasheet |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | - | 1200V (1.2kV) | 51A (Tc) | 30mOhm @ 50A, 20V | 4.3V @ 20mA | 213.5nC @ 20V | 2420pF @ 800V | 119W (Tj) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
|
NXH006P120M3F2PTHGMOSFET 2N-CH 1200V 191A 36PIM |
1 | - |
|
Datasheet |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 191A (Tc) | 8mOhm @ 100A, 18V | 4.4V @ 80mA | 622nC @ 20V | 11914pF @ 800V | 556W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 36-PIM (56.7x62.8) |
|
A2U8M12W3-FCMOSFET 4N-CH 750V/1.2KV 180A |
9,411 | - |
|
Datasheet |
ECOPACK® | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | Silicon Carbide (SiC) | 750V, 1.2kV | 180A, 140A | 8mOhm @ 100A, 18V, 12.5mOhm @ 100A, 18V | 4.2V @ 2mA, 4V @ 2mA | 288nC @ 18V, 304nC @ 18V | 7660pF @ 400V, 7370pF @ 800V | - | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
|
CAB011A12GM3MOSFET 2N-CH 1200V 141A MODULE |
5,026 | - |
|
Datasheet |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 141A (Tj) | 13.9mOhm @ 150A, 15V | 3.9V @ 34mA | 354nC @ 15V | 11000pF @ 1000V | 10mW | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
CAB008A12GM3TMOSFET 2N-CH 1200V 182A MODULE |
1 | - |
|
Datasheet |
- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 182A (Tj) | 10.4mOhm @ 150A, 15V | 3.6V @ 46mA | 472nC @ 15V | 13600pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
BSM300D12P4G101MOSFET 2N-CH 1200V 291A MODULE |
2,899 | - |
|
Datasheet |
- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 1200V (1.2kV) | 291A (Tc) | - | 4.8V @ 145.6mA | - | 30000pF @ 10V | 925W (Tc) | 175°C (TJ) | - | - | Chassis Mount | Module |
|
MSCSM120HRM052NGMOSFET 4N-CH 1200V/700V 472A |
5,419 | - |
|
Datasheet |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1200V (1.2kV), 700V | 472A (Tc), 442A (Tc) | 5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V | 2.8V @ 18mA, 2.4V @ 16mA | 1392nC @ 20V, 860nC @ 20V | 18100pF @ 1000V, 18000pF @ 700V | 1.846kW (Tc), 1.161kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
FS03MR12A7MA2BHPSA1MOSFET 6N-CH 1200V 310A |
8,397 | - |
|
Datasheet |
HybridPACK™ | Module | Box | Active | Silicon Carbide (SiC) | 6 N-Channel | Silicon Carbide (SiC) | 1200V (1.2kV) | 310A | 2.54mOhm @ 310A, 18V | 4.55V @ 120mA | 870nC @ 18V | 25900pF @ 750V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
CAB003M09DM3MOSFET 2N-CH 900V 518A MODULE |
1 | - |
|
Datasheet |
- | Module | Bulk | Active | SiCFET (Silicon Carbide) | 2 N-Channel (Half Bridge) | - | 900V | 518A (Tc) | 3.25mOhm @ 400A, 15V | 3.5V @ 130mA | 840nC @ 15V | 20.4pF @ 900V | 1.163kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | Module |
|
CAR600M12HN6MOSFET 2N-CH 1200V 908A MODULE |
1 | - |
|
Datasheet |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 908A (Tc) | - | - | - | 45300pF @ 0V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | Module |
